Doping of silicon with boron by rapid thermal processing (1988)
Source: Semiconductor Science and Technology. Unidade: EP
Subjects: SILÍCIO, SEMICONDUTORES
ABNT
SOUZA, J. P. e HASENACK, Claus Martin e SWART, Jacobus Willibrordus. Doping of silicon with boron by rapid thermal processing. Semiconductor Science and Technology, v. 3 , n. 4 , p. 277-90, 1988Tradução . . Acesso em: 07 dez. 2025.APA
Souza, J. P., Hasenack, C. M., & Swart, J. W. (1988). Doping of silicon with boron by rapid thermal processing. Semiconductor Science and Technology, 3 ( 4 ), 277-90.NLM
Souza JP, Hasenack CM, Swart JW. Doping of silicon with boron by rapid thermal processing. Semiconductor Science and Technology. 1988 ;3 ( 4 ): 277-90.[citado 2025 dez. 07 ]Vancouver
Souza JP, Hasenack CM, Swart JW. Doping of silicon with boron by rapid thermal processing. Semiconductor Science and Technology. 1988 ;3 ( 4 ): 277-90.[citado 2025 dez. 07 ]