Source: Physical Review Letters B. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
ZHANG, Y et al. Properties of the as related shallow acceptor level in hetero epitaxial 'ZN''SE' grown by molecular beam epitaxy. Physical Review Letters B, v. 48, n. 15, p. 10885, 1993Tradução . . Acesso em: 20 fev. 2026.APA
Zhang, Y., Skromme, B. J., Tamargo, M. C., & Shibli, S. M. (1993). Properties of the as related shallow acceptor level in hetero epitaxial 'ZN''SE' grown by molecular beam epitaxy. Physical Review Letters B, 48( 15), 10885.NLM
Zhang Y, Skromme BJ, Tamargo MC, Shibli SM. Properties of the as related shallow acceptor level in hetero epitaxial 'ZN''SE' grown by molecular beam epitaxy. Physical Review Letters B. 1993 ;48( 15): 10885.[citado 2026 fev. 20 ]Vancouver
Zhang Y, Skromme BJ, Tamargo MC, Shibli SM. Properties of the as related shallow acceptor level in hetero epitaxial 'ZN''SE' grown by molecular beam epitaxy. Physical Review Letters B. 1993 ;48( 15): 10885.[citado 2026 fev. 20 ]
