Albertin, Katia Franklin 
; Pereyra, Inés
Source: Physica Status Solidi (C). Unidade: EP
Subjects: FILMES FINOS, SEMICONDUTORES, DIELÉTRICOS
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ALBERTIN, Katia Franklin e PEREYRA, Inés. Study of metal-oxide-semiconductor capacitors with r.f. magnetron sputtering TiOxNy films dielectric layer. Physica Status Solidi (C), v. 7, n. 3-4, p. 937-940, 2010Tradução . . Disponível em: https://doi.org/10.1002/pssc.200982656. Acesso em: 26 abr. 2026.APA
Albertin, K. F., & Pereyra, I. (2010). Study of metal-oxide-semiconductor capacitors with r.f. magnetron sputtering TiOxNy films dielectric layer. Physica Status Solidi (C), 7( 3-4), 937-940. doi:10.1002/pssc.200982656NLM
Albertin KF, Pereyra I. Study of metal-oxide-semiconductor capacitors with r.f. magnetron sputtering TiOxNy films dielectric layer [Internet]. Physica Status Solidi (C). 2010 ; 7( 3-4): 937-940.[citado 2026 abr. 26 ] Available from: https://doi.org/10.1002/pssc.200982656Vancouver
Albertin KF, Pereyra I. Study of metal-oxide-semiconductor capacitors with r.f. magnetron sputtering TiOxNy films dielectric layer [Internet]. Physica Status Solidi (C). 2010 ; 7( 3-4): 937-940.[citado 2026 abr. 26 ] Available from: https://doi.org/10.1002/pssc.200982656
