Bellodi, Marcello; Martino, João Antonio 
Fonte: Journal of Solid State Devices and Circuits. Unidade: EP
Assunto: CIRCUITOS ELÉTRICOS
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BELLODI, Marcello e MARTINO, João Antonio. Components of the leakage drain current in accumulation-mode SOI pMOSFETs at high-temperatures. Journal of Solid State Devices and Circuits, v. 7, n. 1, p. 7-11, 1999Tradução . . Acesso em: 12 dez. 2025.APA
Bellodi, M., & Martino, J. A. (1999). Components of the leakage drain current in accumulation-mode SOI pMOSFETs at high-temperatures. Journal of Solid State Devices and Circuits, 7( 1), 7-11.NLM
Bellodi M, Martino JA. Components of the leakage drain current in accumulation-mode SOI pMOSFETs at high-temperatures. Journal of Solid State Devices and Circuits. 1999 ; 7( 1): 7-11.[citado 2025 dez. 12 ]Vancouver
Bellodi M, Martino JA. Components of the leakage drain current in accumulation-mode SOI pMOSFETs at high-temperatures. Journal of Solid State Devices and Circuits. 1999 ; 7( 1): 7-11.[citado 2025 dez. 12 ]
