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Filtros : "Journal of Solid State Devices and Circuits" Limpar

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  • Artigo de periodico

    Development and characterization of an array of silicon based microelectrodes (1999)

    Fontes, Marcelo Bariatto Andrade; Furlan, Rogério ; Santiago-Avilés, Jorge Juan ; Araki, Koiti

    Source: Journal of Solid State Devices and Circuits. Unidades: EP, IQ

    Assunto: CIRCUITOS ELÉTRICOS

    How to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas

    • ABNT

      FONTES, Marcelo Bariatto Andrade et al. Development and characterization of an array of silicon based microelectrodes. Journal of Solid State Devices and Circuits, v. 7, n. 1, p. 12-16, 1999Tradução . . Acesso em: 11 dez. 2025.

    • APA

      Fontes, M. B. A., Furlan, R., Santiago-Avilés, J. J., & Araki, K. (1999). Development and characterization of an array of silicon based microelectrodes. Journal of Solid State Devices and Circuits, 7( 1), 12-16.

    • NLM

      Fontes MBA, Furlan R, Santiago-Avilés JJ, Araki K. Development and characterization of an array of silicon based microelectrodes. Journal of Solid State Devices and Circuits. 1999 ; 7( 1): 12-16.[citado 2025 dez. 11 ]

    • Vancouver

      Fontes MBA, Furlan R, Santiago-Avilés JJ, Araki K. Development and characterization of an array of silicon based microelectrodes. Journal of Solid State Devices and Circuits. 1999 ; 7( 1): 12-16.[citado 2025 dez. 11 ]

  • Artigo de periodico

    Components of the leakage drain current in accumulation-mode SOI pMOSFETs at high-temperatures (1999)

    Bellodi, Marcello; Martino, João Antonio

    Source: Journal of Solid State Devices and Circuits. Unidade: EP

    Assunto: CIRCUITOS ELÉTRICOS

    How to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas

    • ABNT

      BELLODI, Marcello e MARTINO, João Antonio. Components of the leakage drain current in accumulation-mode SOI pMOSFETs at high-temperatures. Journal of Solid State Devices and Circuits, v. 7, n. 1, p. 7-11, 1999Tradução . . Acesso em: 11 dez. 2025.

    • APA

      Bellodi, M., & Martino, J. A. (1999). Components of the leakage drain current in accumulation-mode SOI pMOSFETs at high-temperatures. Journal of Solid State Devices and Circuits, 7( 1), 7-11.

    • NLM

      Bellodi M, Martino JA. Components of the leakage drain current in accumulation-mode SOI pMOSFETs at high-temperatures. Journal of Solid State Devices and Circuits. 1999 ; 7( 1): 7-11.[citado 2025 dez. 11 ]

    • Vancouver

      Bellodi M, Martino JA. Components of the leakage drain current in accumulation-mode SOI pMOSFETs at high-temperatures. Journal of Solid State Devices and Circuits. 1999 ; 7( 1): 7-11.[citado 2025 dez. 11 ]
  • 1

1 - 2 (2 records)

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