p-type doping of GaAs(001) layers grown by MBE using silicon as a dopant (1999)
Source: Journal Crystal Growth. Unidade: IF
Assunto: CRISTALOGRAFIA
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QUIVY, A. A. et al. p-type doping of GaAs(001) layers grown by MBE using silicon as a dopant. Journal Crystal Growth, v. 206, n. 3, p. 171-176, 1999Tradução . . Disponível em: https://doi.org/10.1016/s0022-0248(99)00325-5. Acesso em: 18 out. 2024.APA
Quivy, A. A., Sperandio, A. L., Silva, E. C. F. da, & Leite, J. R. (1999). p-type doping of GaAs(001) layers grown by MBE using silicon as a dopant. Journal Crystal Growth, 206( 3), 171-176. doi:10.1016/s0022-0248(99)00325-5NLM
Quivy AA, Sperandio AL, Silva ECF da, Leite JR. p-type doping of GaAs(001) layers grown by MBE using silicon as a dopant [Internet]. Journal Crystal Growth. 1999 ; 206( 3): 171-176.[citado 2024 out. 18 ] Available from: https://doi.org/10.1016/s0022-0248(99)00325-5Vancouver
Quivy AA, Sperandio AL, Silva ECF da, Leite JR. p-type doping of GaAs(001) layers grown by MBE using silicon as a dopant [Internet]. Journal Crystal Growth. 1999 ; 206( 3): 171-176.[citado 2024 out. 18 ] Available from: https://doi.org/10.1016/s0022-0248(99)00325-5