Source: Japanese Journal of Applied Physics, pt.1. Unidade: IF
Assunto: FÍSICA
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ABNT
KOHZAKI, M et al. Influence of deposition temperatures on bonding state and microstructure of carbon nitride thin films prepared by ion-beam-assisted deposition. Japanese Journal of Applied Physics, pt.1, v. 36, n. 4A, p. 2313-2318, 1997Tradução . . Acesso em: 18 nov. 2024.APA
Kohzaki, M., Matsumuro, A., Hayashi, T., Muramatsu, M., & Yamaguchi, K. (1997). Influence of deposition temperatures on bonding state and microstructure of carbon nitride thin films prepared by ion-beam-assisted deposition. Japanese Journal of Applied Physics, pt.1, 36( 4A), 2313-2318.NLM
Kohzaki M, Matsumuro A, Hayashi T, Muramatsu M, Yamaguchi K. Influence of deposition temperatures on bonding state and microstructure of carbon nitride thin films prepared by ion-beam-assisted deposition. Japanese Journal of Applied Physics, pt.1. 1997 ; 36( 4A): 2313-2318.[citado 2024 nov. 18 ]Vancouver
Kohzaki M, Matsumuro A, Hayashi T, Muramatsu M, Yamaguchi K. Influence of deposition temperatures on bonding state and microstructure of carbon nitride thin films prepared by ion-beam-assisted deposition. Japanese Journal of Applied Physics, pt.1. 1997 ; 36( 4A): 2313-2318.[citado 2024 nov. 18 ]
