Mev ion beam induced index of refraction changes il layered 'GA''AS' / ai'GA''AS' waveguides (1996)
Source: Ion-Solid Interactions for Material Modification and Processing. Unidade: FFCLRP
Assunto: FÍSICA
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TAYLOR, T et al. Mev ion beam induced index of refraction changes il layered 'GA''AS' / ai'GA''AS' waveguides. Ion-Solid Interactions for Material Modification and Processing. Tradução . Pittsburg: Mrs, 1996. . . Acesso em: 05 nov. 2025.APA
Taylor, T., Ila, D., Zimmerman, R. L., & Ashley, P. R. (1996). Mev ion beam induced index of refraction changes il layered 'GA''AS' / ai'GA''AS' waveguides. In Ion-Solid Interactions for Material Modification and Processing. Pittsburg: Mrs.NLM
Taylor T, Ila D, Zimmerman RL, Ashley PR. Mev ion beam induced index of refraction changes il layered 'GA''AS' / ai'GA''AS' waveguides. In: Ion-Solid Interactions for Material Modification and Processing. Pittsburg: Mrs; 1996. [citado 2025 nov. 05 ]Vancouver
Taylor T, Ila D, Zimmerman RL, Ashley PR. Mev ion beam induced index of refraction changes il layered 'GA''AS' / ai'GA''AS' waveguides. In: Ion-Solid Interactions for Material Modification and Processing. Pittsburg: Mrs; 1996. [citado 2025 nov. 05 ]
