Analytical model for the photodetection mechanisms in high-electron mobility transistors (1996)
Romero, Murilo Araujo 
; Martinez, M A G; Herczfeld, P R
Source: Ieee Transactions on Microwave Theory and Techniques. Unidade: EESC
Assunto: ENGENHARIA ELÉTRICA
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ABNT
ROMERO, Murilo Araujo e MARTINEZ, M A G e HERCZFELD, P R. Analytical model for the photodetection mechanisms in high-electron mobility transistors. Ieee Transactions on Microwave Theory and Techniques, v. 44, n. 12, p. 2279-87, 1996Tradução . . Disponível em: https://doi.org/10.1109/22.556467. Acesso em: 15 nov. 2024.APA
Romero, M. A., Martinez, M. A. G., & Herczfeld, P. R. (1996). Analytical model for the photodetection mechanisms in high-electron mobility transistors. Ieee Transactions on Microwave Theory and Techniques, 44( 12), 2279-87. doi:10.1109/22.556467NLM
Romero MA, Martinez MAG, Herczfeld PR. Analytical model for the photodetection mechanisms in high-electron mobility transistors [Internet]. Ieee Transactions on Microwave Theory and Techniques. 1996 ;44( 12): 2279-87.[citado 2024 nov. 15 ] Available from: https://doi.org/10.1109/22.556467Vancouver
Romero MA, Martinez MAG, Herczfeld PR. Analytical model for the photodetection mechanisms in high-electron mobility transistors [Internet]. Ieee Transactions on Microwave Theory and Techniques. 1996 ;44( 12): 2279-87.[citado 2024 nov. 15 ] Available from: https://doi.org/10.1109/22.556467
