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  • Artigo de periodico

    Analytical physics-based compact current–voltage model for 2D-2D resonant tunneling diodes (2022)

    Celino, Daniel Ricardo ; Ragi, Regiane; Romero, Murilo Araujo

    Source: IEEE Transactions on Nanotechnology. Unidade: EESC

    Subjects: POTENCIAL ELÉTRICO, ENGENHARIA ELÉTRICA

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    • ABNT

      CELINO, Daniel Ricardo e RAGI, Regiane e ROMERO, Murilo Araujo. Analytical physics-based compact current–voltage model for 2D-2D resonant tunneling diodes. IEEE Transactions on Nanotechnology, v. 21, p. 752-762, 2022Tradução . . Disponível em: https://doi.org/10.1109/TNANO.2022.3223019. Acesso em: 30 jun. 2025.

    • APA

      Celino, D. R., Ragi, R., & Romero, M. A. (2022). Analytical physics-based compact current–voltage model for 2D-2D resonant tunneling diodes. IEEE Transactions on Nanotechnology, 21, 752-762. doi:10.1109/TNANO.2022.3223019

    • NLM

      Celino DR, Ragi R, Romero MA. Analytical physics-based compact current–voltage model for 2D-2D resonant tunneling diodes [Internet]. IEEE Transactions on Nanotechnology. 2022 ; 21 752-762.[citado 2025 jun. 30 ] Available from: https://doi.org/10.1109/TNANO.2022.3223019

    • Vancouver

      Celino DR, Ragi R, Romero MA. Analytical physics-based compact current–voltage model for 2D-2D resonant tunneling diodes [Internet]. IEEE Transactions on Nanotechnology. 2022 ; 21 752-762.[citado 2025 jun. 30 ] Available from: https://doi.org/10.1109/TNANO.2022.3223019

  • Artigo de periodico

    Fully analytical compact model for the I–V characteristics of large radius junctionless nanowire FETs (2019)

    Ragi, Regiane; Romero, Murilo Araujo

    Source: IEEE Transactions on Nanotechnology. Unidade: EESC

    Subjects: TRANSISTORES, ENGENHARIA ELÉTRICA

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    • ABNT

      RAGI, Regiane e ROMERO, Murilo Araujo. Fully analytical compact model for the I–V characteristics of large radius junctionless nanowire FETs. IEEE Transactions on Nanotechnology, v. 18, n. 1, p. 762-769, 2019Tradução . . Disponível em: https://doi.org/10.1109/TNANO.2019.2926041. Acesso em: 30 jun. 2025.

    • APA

      Ragi, R., & Romero, M. A. (2019). Fully analytical compact model for the I–V characteristics of large radius junctionless nanowire FETs. IEEE Transactions on Nanotechnology, 18( 1), 762-769. doi:10.1109/TNANO.2019.2926041

    • NLM

      Ragi R, Romero MA. Fully analytical compact model for the I–V characteristics of large radius junctionless nanowire FETs [Internet]. IEEE Transactions on Nanotechnology. 2019 ; 18( 1): 762-769.[citado 2025 jun. 30 ] Available from: https://doi.org/10.1109/TNANO.2019.2926041

    • Vancouver

      Ragi R, Romero MA. Fully analytical compact model for the I–V characteristics of large radius junctionless nanowire FETs [Internet]. IEEE Transactions on Nanotechnology. 2019 ; 18( 1): 762-769.[citado 2025 jun. 30 ] Available from: https://doi.org/10.1109/TNANO.2019.2926041

  • Artigo de periodico

    An explicit quantum-mechanical compact model for the I-V characteristics of cylindrical nanowire MOSFETs (2016)

    Ragi, Regiane; Nobrega, Rafael Vinicius Tayette da; Duarte, Ulysses Rondina; Romero, Murilo Araujo

    Source: IEEE Transactions on Nanotechnology. Unidade: EESC

    Subjects: MECÂNICA QUÂNTICA, MODELOS MATEMÁTICOS, MODELOS ANALÍTICOS, SEMICONDUTORES, NANOELETRÔNICA, TRANSISTORES

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    • ABNT

      RAGI, Regiane et al. An explicit quantum-mechanical compact model for the I-V characteristics of cylindrical nanowire MOSFETs. IEEE Transactions on Nanotechnology, v. 15, n. 4, p. 627-634, 2016Tradução . . Disponível em: https://doi.org/10.1109/TNANO.2016.2567323. Acesso em: 30 jun. 2025.

    • APA

      Ragi, R., Nobrega, R. V. T. da, Duarte, U. R., & Romero, M. A. (2016). An explicit quantum-mechanical compact model for the I-V characteristics of cylindrical nanowire MOSFETs. IEEE Transactions on Nanotechnology, 15( 4), 627-634. doi:10.1109/TNANO.2016.2567323

    • NLM

      Ragi R, Nobrega RVT da, Duarte UR, Romero MA. An explicit quantum-mechanical compact model for the I-V characteristics of cylindrical nanowire MOSFETs [Internet]. IEEE Transactions on Nanotechnology. 2016 ; 15( 4): 627-634.[citado 2025 jun. 30 ] Available from: https://doi.org/10.1109/TNANO.2016.2567323

    • Vancouver

      Ragi R, Nobrega RVT da, Duarte UR, Romero MA. An explicit quantum-mechanical compact model for the I-V characteristics of cylindrical nanowire MOSFETs [Internet]. IEEE Transactions on Nanotechnology. 2016 ; 15( 4): 627-634.[citado 2025 jun. 30 ] Available from: https://doi.org/10.1109/TNANO.2016.2567323
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