Interface roughness in short-period InGaAs/InP superlattices (2008)
Fonte: Applied Physics Letters. Unidade: IFSC
Assuntos: SEMICONDUTORES, FÍSICA DA MATÉRIA CONDENSADA, FOTOLUMINESCÊNCIA, MAGNETISMO
ABNT
PUSEP, Yuri A. e GOZZO, G. C. e LA PIERRE, R. R. Interface roughness in short-period InGaAs/InP superlattices. Applied Physics Letters, v. 93, n. 24, p. 242104-1-242104-3, 2008Tradução . . Disponível em: https://doi.org/10.1063/1.3050531. Acesso em: 01 out. 2024.APA
Pusep, Y. A., Gozzo, G. C., & La Pierre, R. R. (2008). Interface roughness in short-period InGaAs/InP superlattices. Applied Physics Letters, 93( 24), 242104-1-242104-3. doi:10.1063/1.3050531NLM
Pusep YA, Gozzo GC, La Pierre RR. Interface roughness in short-period InGaAs/InP superlattices [Internet]. Applied Physics Letters. 2008 ; 93( 24): 242104-1-242104-3.[citado 2024 out. 01 ] Available from: https://doi.org/10.1063/1.3050531Vancouver
Pusep YA, Gozzo GC, La Pierre RR. Interface roughness in short-period InGaAs/InP superlattices [Internet]. Applied Physics Letters. 2008 ; 93( 24): 242104-1-242104-3.[citado 2024 out. 01 ] Available from: https://doi.org/10.1063/1.3050531