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Artigo de periodico
Step bunching in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs(001) vicinal surfaces (2001)
Martini, S.; Quivy, A. A.; Ugarte, D; Lange, C; Richter, W; Tokranov, V E
Fonte: Journal of Crystal Growth. Unidade: IF
Assuntos: FOTOLUMINESCÊNCIA, MICROSCOPIA ELETRÔNICA DE VARREDURA
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ABNT
MARTINI, S. et al. Step bunching in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs(001) vicinal surfaces. Journal of Crystal Growth, v. 227, p. 46-50, 2001Tradução . . Disponível em: https://doi.org/10.1016/s0022-0248(01)00630-3. Acesso em: 08 out. 2024.
APA
Martini, S., Quivy, A. A., Ugarte, D., Lange, C., Richter, W., & Tokranov, V. E. (2001). Step bunching in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs(001) vicinal surfaces. Journal of Crystal Growth, 227, 46-50. doi:10.1016/s0022-0248(01)00630-3
NLM
Martini S, Quivy AA, Ugarte D, Lange C, Richter W, Tokranov VE. Step bunching in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs(001) vicinal surfaces [Internet]. Journal of Crystal Growth. 2001 ; 227 46-50.[citado 2024 out. 08 ] Available from: https://doi.org/10.1016/s0022-0248(01)00630-3
Vancouver
Martini S, Quivy AA, Ugarte D, Lange C, Richter W, Tokranov VE. Step bunching in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs(001) vicinal surfaces [Internet]. Journal of Crystal Growth. 2001 ; 227 46-50.[citado 2024 out. 08 ] Available from: https://doi.org/10.1016/s0022-0248(01)00630-3
Artigo de periodico
Electrical resistivity and band-gap shift of Si-doped GaN and metal-nometal transition in cubic GaN, InN and AlN systems (2001)
Fernandez, J R L; Araujo, C Moyses; Silva, A Ferreira da; Leite, J. R.; Sernelius, Bo E; Tabata, A; Abramog, E; Chitta, V A; Persson, C; Ahuja, R; Pepe, I; As, D J; Frey, T; Schikora, D; Lischka, K
Fonte: Journal of Crystal Growth. Unidade: IF
Assuntos: DIELÉTRICOS, RESISTÊNCIA ELÉTRICA, MATERIAIS (ANÁLISE;TESTES), RESISTÊNCIA DOS MATERIAIS
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ABNT
FERNANDEZ, J R L et al. Electrical resistivity and band-gap shift of Si-doped GaN and metal-nometal transition in cubic GaN, InN and AlN systems. Journal of Crystal Growth, v. 231, n. 3, p. 420-427, 2001Tradução . . Disponível em: https://doi.org/10.1016/s0022-0248(01)01473-7. Acesso em: 08 out. 2024.
APA
Fernandez, J. R. L., Araujo, C. M., Silva, A. F. da, Leite, J. R., Sernelius, B. E., Tabata, A., et al. (2001). Electrical resistivity and band-gap shift of Si-doped GaN and metal-nometal transition in cubic GaN, InN and AlN systems. Journal of Crystal Growth, 231( 3), 420-427. doi:10.1016/s0022-0248(01)01473-7
NLM
Fernandez JRL, Araujo CM, Silva AF da, Leite JR, Sernelius BE, Tabata A, Abramog E, Chitta VA, Persson C, Ahuja R, Pepe I, As DJ, Frey T, Schikora D, Lischka K. Electrical resistivity and band-gap shift of Si-doped GaN and metal-nometal transition in cubic GaN, InN and AlN systems [Internet]. Journal of Crystal Growth. 2001 ; 231( 3): 420-427.[citado 2024 out. 08 ] Available from: https://doi.org/10.1016/s0022-0248(01)01473-7
Vancouver
Fernandez JRL, Araujo CM, Silva AF da, Leite JR, Sernelius BE, Tabata A, Abramog E, Chitta VA, Persson C, Ahuja R, Pepe I, As DJ, Frey T, Schikora D, Lischka K. Electrical resistivity and band-gap shift of Si-doped GaN and metal-nometal transition in cubic GaN, InN and AlN systems [Internet]. Journal of Crystal Growth. 2001 ; 231( 3): 420-427.[citado 2024 out. 08 ] Available from: https://doi.org/10.1016/s0022-0248(01)01473-7
Trabalho de evento-anais periodico
Correlation between structural and optical properties of InAs quantum dots along their evolution (2001)
Silva, Marcelo Jacob da; Quivy, A. A.; González-Borrero, P P; Moshegov, N T; Marega Junior, Euclydes
Fonte: Journal of Crystal Growth. Nome do evento: International Conference on Molecular Beam Epitaxy. Unidades: IF, IFSC
Assunto: DIELÉTRICOS
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ABNT
SILVA, Marcelo Jacob da et al. Correlation between structural and optical properties of InAs quantum dots along their evolution. Journal of Crystal Growth. Amsterdam: Instituto de Física, Universidade de São Paulo. Disponível em: https://doi.org/10.1016/S0022-0248(01)00981-2. Acesso em: 08 out. 2024. , 2001
APA
Silva, M. J. da, Quivy, A. A., González-Borrero, P. P., Moshegov, N. T., & Marega Junior, E. (2001). Correlation between structural and optical properties of InAs quantum dots along their evolution. Journal of Crystal Growth. Amsterdam: Instituto de Física, Universidade de São Paulo. doi:10.1016/S0022-0248(01)00981-2
NLM
Silva MJ da, Quivy AA, González-Borrero PP, Moshegov NT, Marega Junior E. Correlation between structural and optical properties of InAs quantum dots along their evolution [Internet]. Journal of Crystal Growth. 2001 ;227-228 1025-1028.[citado 2024 out. 08 ] Available from: https://doi.org/10.1016/S0022-0248(01)00981-2
Vancouver
Silva MJ da, Quivy AA, González-Borrero PP, Moshegov NT, Marega Junior E. Correlation between structural and optical properties of InAs quantum dots along their evolution [Internet]. Journal of Crystal Growth. 2001 ;227-228 1025-1028.[citado 2024 out. 08 ] Available from: https://doi.org/10.1016/S0022-0248(01)00981-2

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