Nicolett, Aparecido Sirley; Martino, João Antonio 
; Simoen, Eddy ; Claeys, Cor
Source: Perspectives, science and technologies for novel silicon on insulator devices. Conference titles: Nato Advanced Research Workshop. Unidade: EP
Assunto: SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
NICOLETT, Aparecido Sirley et al. Back gate voltage influence on the LDD SOI NMOSFET series resistence extraction from 150 to 300 k. 1998, Anais.. Kyiv: National Academy of Sciences of Ukraine, 1998. . Acesso em: 01 nov. 2024.APA
Nicolett, A. S., Martino, J. A., Simoen, E., & Claeys, C. (1998). Back gate voltage influence on the LDD SOI NMOSFET series resistence extraction from 150 to 300 k. In Perspectives, science and technologies for novel silicon on insulator devices. Kyiv: National Academy of Sciences of Ukraine.NLM
Nicolett AS, Martino JA, Simoen E, Claeys C. Back gate voltage influence on the LDD SOI NMOSFET series resistence extraction from 150 to 300 k. Perspectives, science and technologies for novel silicon on insulator devices. 1998 ;[citado 2024 nov. 01 ]Vancouver
Nicolett AS, Martino JA, Simoen E, Claeys C. Back gate voltage influence on the LDD SOI NMOSFET series resistence extraction from 150 to 300 k. Perspectives, science and technologies for novel silicon on insulator devices. 1998 ;[citado 2024 nov. 01 ]
