Source: SBMICRO 2008: Anais. Conference title: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Subject: MICROELETRÔNICA
ABNT
FRAGA, Mariana Amorim; PESSOA, Rodrigo S; OLIVEIRA, Ivo C; et al. Etching characteristics and surface morphology of nitrogen-doped a-SiC films prepared by RF magnetron sputtering. Anais.. Pennington: The Electrochemical Society, 2008. DOI: 10.1149/1.2956052.APA
Fraga, M. A., Pessoa, R. S., Oliveira, I. C., Massi, M., Maciel, H. S., Martinho, H. S., et al. (2008). Etching characteristics and surface morphology of nitrogen-doped a-SiC films prepared by RF magnetron sputtering. In SBMICRO 2008: Anais. Pennington: The Electrochemical Society. doi:10.1149/1.2956052NLM
Fraga MA, Pessoa RS, Oliveira IC, Massi M, Maciel HS, Martinho HS, Santos Filho SG dos, Marcuzzo JS. Etching characteristics and surface morphology of nitrogen-doped a-SiC films prepared by RF magnetron sputtering. SBMICRO 2008: Anais. 2008 ;Vancouver
Fraga MA, Pessoa RS, Oliveira IC, Massi M, Maciel HS, Martinho HS, Santos Filho SG dos, Marcuzzo JS. Etching characteristics and surface morphology of nitrogen-doped a-SiC films prepared by RF magnetron sputtering. SBMICRO 2008: Anais. 2008 ;