Study of MOS capacitors with annealed TiO2 gate dielectric layer (2007)
Source: SBMicro 2007. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
ABNT
ALBERTIN, Katia Franklin; VALLE, M A; PEREYRA, Inés. Study of MOS capacitors with annealed TiO2 gate dielectric layer. Anais.. Pennington: The Electrochemical Society, 2007.APA
Albertin, K. F., Valle, M. A., & Pereyra, I. (2007). Study of MOS capacitors with annealed TiO2 gate dielectric layer. In SBMicro 2007. Pennington: The Electrochemical Society.NLM
Albertin KF, Valle MA, Pereyra I. Study of MOS capacitors with annealed TiO2 gate dielectric layer. SBMicro 2007. 2007 ;Vancouver
Albertin KF, Valle MA, Pereyra I. Study of MOS capacitors with annealed TiO2 gate dielectric layer. SBMicro 2007. 2007 ;