Fonte: Book of Abstracts. Nome do evento: International Conference on Science and Technology of Synthetic Metals. Unidades: IFSC, EP
Assunto: DIODOS
ABNT
ONMORI, Roberto Koji et al. Photoconduction in Schottky diodes with ´MI´c-Si:H(n)/poly(o-methoxyaniline)/a-Si:H(p) structure. 1998, Anais.. Montpellier: Instituto de Física de São Carlos, Universidade de São Paulo, 1998. . Acesso em: 08 jul. 2024.APA
Onmori, R. K., Dirani, E. A. T., Faria, R. M., & Andrade, A. M. de. (1998). Photoconduction in Schottky diodes with ´MI´c-Si:H(n)/poly(o-methoxyaniline)/a-Si:H(p) structure. In Book of Abstracts. Montpellier: Instituto de Física de São Carlos, Universidade de São Paulo.NLM
Onmori RK, Dirani EAT, Faria RM, Andrade AM de. Photoconduction in Schottky diodes with ´MI´c-Si:H(n)/poly(o-methoxyaniline)/a-Si:H(p) structure. Book of Abstracts. 1998 ;[citado 2024 jul. 08 ]Vancouver
Onmori RK, Dirani EAT, Faria RM, Andrade AM de. Photoconduction in Schottky diodes with ´MI´c-Si:H(n)/poly(o-methoxyaniline)/a-Si:H(p) structure. Book of Abstracts. 1998 ;[citado 2024 jul. 08 ]