Filtros : "Venezuela, P" Limpar

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  • Source: Physical Review B. Unidade: IF

    Subjects: MATÉRIA CONDENSADA, ESTRUTURA ELETRÔNICA, PROPRIEDADES DOS MATERIAIS, SEMICONDUTORES, FERROMAGNETISMO

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    • ABNT

      SCHMIDT, T M; VENEZUELA, P; ARANTES JUNIOR, Jeverson Teodoro; FAZZIO, Adalberto. Electronic and magnetic properties of Mn-doped InP nanowires from first principles. Physical Review B, Woodbury, v. 73, n. 23, p. 235330, 2006. Disponível em: < http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000073000023235330000001&idtype=cvips&prog=normal > DOI: 10.1103/physrevb.73.235330.
    • APA

      Schmidt, T. M., Venezuela, P., Arantes Junior, J. T., & Fazzio, A. (2006). Electronic and magnetic properties of Mn-doped InP nanowires from first principles. Physical Review B, 73( 23), 235330. doi:10.1103/physrevb.73.235330
    • NLM

      Schmidt TM, Venezuela P, Arantes Junior JT, Fazzio A. Electronic and magnetic properties of Mn-doped InP nanowires from first principles [Internet]. Physical Review B. 2006 ; 73( 23): 235330.Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000073000023235330000001&idtype=cvips&prog=normal
    • Vancouver

      Schmidt TM, Venezuela P, Arantes Junior JT, Fazzio A. Electronic and magnetic properties of Mn-doped InP nanowires from first principles [Internet]. Physical Review B. 2006 ; 73( 23): 235330.Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000073000023235330000001&idtype=cvips&prog=normal
  • Source: Physical Review B. Unidade: IF

    Subjects: MATÉRIA CONDENSADA, FOTOLUMINESCÊNCIA, ESTRUTURA ELETRÔNICA

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    • ABNT

      SCHMIDT, T M; MIWA, R H; VENEZUELA, P; FAZZIO, Adalberto. Stability and electronic confinement of free-standing InP nanowires: Ab initio calculations. Physical Review B, Woodbury, v. 72, n. 19, p. 193404/1-193404/4, 2005.
    • APA

      Schmidt, T. M., Miwa, R. H., Venezuela, P., & Fazzio, A. (2005). Stability and electronic confinement of free-standing InP nanowires: Ab initio calculations. Physical Review B, 72( 19), 193404/1-193404/4.
    • NLM

      Schmidt TM, Miwa RH, Venezuela P, Fazzio A. Stability and electronic confinement of free-standing InP nanowires: Ab initio calculations. Physical Review B. 2005 ; 72( 19): 193404/1-193404/4.
    • Vancouver

      Schmidt TM, Miwa RH, Venezuela P, Fazzio A. Stability and electronic confinement of free-standing InP nanowires: Ab initio calculations. Physical Review B. 2005 ; 72( 19): 193404/1-193404/4.
  • Source: Resumos. Conference titles: Encontro Nacional de Fisica da Materia Condensada. Unidade: IF

    Subjects: MATÉRIA CONDENSADA, SEMICONDUTORES

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    • ABNT

      VENEZUELA, P; MIWA, Roberto Hiroki; FAZZIO, Adalberto. Carbon in 'Si IND.X' 'Ge IND.1-X': an ab initio investigation. Anais.. São Paulo: SBF, 2004.Disponível em: .
    • APA

      Venezuela, P., Miwa, R. H., & Fazzio, A. (2004). Carbon in 'Si IND.X' 'Ge IND.1-X': an ab initio investigation. In Resumos. São Paulo: SBF. Recuperado de http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxvii/sys/resumos/R0750-1.pdf
    • NLM

      Venezuela P, Miwa RH, Fazzio A. Carbon in 'Si IND.X' 'Ge IND.1-X': an ab initio investigation [Internet]. Resumos. 2004 ;Available from: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxvii/sys/resumos/R0750-1.pdf
    • Vancouver

      Venezuela P, Miwa RH, Fazzio A. Carbon in 'Si IND.X' 'Ge IND.1-X': an ab initio investigation [Internet]. Resumos. 2004 ;Available from: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxvii/sys/resumos/R0750-1.pdf
  • Source: Physical Review B. Unidade: IF

    Assunto: ESTRUTURA ELETRÔNICA

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    • ABNT

      MIWA, R H; VENEZUELA, P; FAZZIO, Adalberto. Theoretical investigation of extended defects and their interactions with vacancies in 'Si IND.X' 'Ge IND.1-X'. Physical Review B, Woodbury, v. 67, n. 20, p. 205317/1-205317, 2003. Disponível em: < http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000067000020205317000001&idtype=cvips >.
    • APA

      Miwa, R. H., Venezuela, P., & Fazzio, A. (2003). Theoretical investigation of extended defects and their interactions with vacancies in 'Si IND.X' 'Ge IND.1-X'. Physical Review B, 67( 20), 205317/1-205317. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000067000020205317000001&idtype=cvips
    • NLM

      Miwa RH, Venezuela P, Fazzio A. Theoretical investigation of extended defects and their interactions with vacancies in 'Si IND.X' 'Ge IND.1-X' [Internet]. Physical Review B. 2003 ; 67( 20): 205317/1-205317.Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000067000020205317000001&idtype=cvips
    • Vancouver

      Miwa RH, Venezuela P, Fazzio A. Theoretical investigation of extended defects and their interactions with vacancies in 'Si IND.X' 'Ge IND.1-X' [Internet]. Physical Review B. 2003 ; 67( 20): 205317/1-205317.Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000067000020205317000001&idtype=cvips
  • Source: Book of Abstracts. Conference titles: Brazilian Workshop on Semiconductor Physics. Unidade: IF

    Assunto: ESTRUTURA ELETRÔNICA

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    • ABNT

      MIWA, R H; VENEZUELA, P; FAZZIO, Adalberto. Stacking faults and vacancies in 'Si IND.X' 'Ge IND.1-X'. Anais.. Fortaleza: DF/UFC, 2003.
    • APA

      Miwa, R. H., Venezuela, P., & Fazzio, A. (2003). Stacking faults and vacancies in 'Si IND.X' 'Ge IND.1-X'. In Book of Abstracts. Fortaleza: DF/UFC.
    • NLM

      Miwa RH, Venezuela P, Fazzio A. Stacking faults and vacancies in 'Si IND.X' 'Ge IND.1-X'. Book of Abstracts. 2003 ;
    • Vancouver

      Miwa RH, Venezuela P, Fazzio A. Stacking faults and vacancies in 'Si IND.X' 'Ge IND.1-X'. Book of Abstracts. 2003 ;
  • Source: Resumos. Conference titles: Encontro Nacional de Física da Matéria Condensada. Unidade: IF

    Assunto: SEMICONDUTORES

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    • ABNT

      VENEZUELA, P; DALPIAN, G M; SILVA, Antonio Jose Roque da; FAZZIO, Adalberto. Vacancy-mediated diffusion in disordered alloys: Ge self-diffusion in 'Si IND.1-X' 'Ge IND.X'. Anais.. São Paulo: SBF, 2002.
    • APA

      Venezuela, P., Dalpian, G. M., Silva, A. J. R. da, & Fazzio, A. (2002). Vacancy-mediated diffusion in disordered alloys: Ge self-diffusion in 'Si IND.1-X' 'Ge IND.X'. In Resumos. São Paulo: SBF.
    • NLM

      Venezuela P, Dalpian GM, Silva AJR da, Fazzio A. Vacancy-mediated diffusion in disordered alloys: Ge self-diffusion in 'Si IND.1-X' 'Ge IND.X'. Resumos. 2002 ;
    • Vancouver

      Venezuela P, Dalpian GM, Silva AJR da, Fazzio A. Vacancy-mediated diffusion in disordered alloys: Ge self-diffusion in 'Si IND.1-X' 'Ge IND.X'. Resumos. 2002 ;
  • Source: Physical Review B. Unidade: IF

    Subjects: MATÉRIA CONDENSADA, FENÔMENO DE TRANSPORTE

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    • ABNT

      VENEZUELA, P; DALPIAN, G M; SILVA, Antonio Jose Roque da; FAZZIO, Adalberto. Vacancy-mediated diffusion in disordered alloys: Ge self-diffusion in 'Si IND.1-X' 'Ge IND.X'. Physical Review B, Woodbury, v. 65, n. 19, p. 193306/1-193306/ , 2002.
    • APA

      Venezuela, P., Dalpian, G. M., Silva, A. J. R. da, & Fazzio, A. (2002). Vacancy-mediated diffusion in disordered alloys: Ge self-diffusion in 'Si IND.1-X' 'Ge IND.X'. Physical Review B, 65( 19), 193306/1-193306/ .
    • NLM

      Venezuela P, Dalpian GM, Silva AJR da, Fazzio A. Vacancy-mediated diffusion in disordered alloys: Ge self-diffusion in 'Si IND.1-X' 'Ge IND.X'. Physical Review B. 2002 ; 65( 19): 193306/1-193306/ .
    • Vancouver

      Venezuela P, Dalpian GM, Silva AJR da, Fazzio A. Vacancy-mediated diffusion in disordered alloys: Ge self-diffusion in 'Si IND.1-X' 'Ge IND.X'. Physical Review B. 2002 ; 65( 19): 193306/1-193306/ .
  • Source: Programa e Livro de Resumos. Conference titles: Encontro da Sociedade Brasileira de Pesquisa em Materiais. Unidade: IF

    Subjects: MATERIAIS, SEMICONDUTORES

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    • ABNT

      VENEZUELA, P; DALPIAN, G M; SILVA, Antonio Jose Roque da; FAZZIO, Adalberto. Vacancy-mediated diffusion in disordered alloys: Ge self-diffusion in 'Si IND.1-X' 'Ge IND.X'. Anais.. Rio de Janeiro: SBPMat, 2002.
    • APA

      Venezuela, P., Dalpian, G. M., Silva, A. J. R. da, & Fazzio, A. (2002). Vacancy-mediated diffusion in disordered alloys: Ge self-diffusion in 'Si IND.1-X' 'Ge IND.X'. In Programa e Livro de Resumos. Rio de Janeiro: SBPMat.
    • NLM

      Venezuela P, Dalpian GM, Silva AJR da, Fazzio A. Vacancy-mediated diffusion in disordered alloys: Ge self-diffusion in 'Si IND.1-X' 'Ge IND.X'. Programa e Livro de Resumos. 2002 ;
    • Vancouver

      Venezuela P, Dalpian GM, Silva AJR da, Fazzio A. Vacancy-mediated diffusion in disordered alloys: Ge self-diffusion in 'Si IND.1-X' 'Ge IND.X'. Programa e Livro de Resumos. 2002 ;
  • Source: Computational Materials Science. Unidade: IF

    Subjects: SEMICONDUTORES, SISTEMAS DINÂMICOS, ESTABILIDADE DE SISTEMAS

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    • ABNT

      VENEZUELA, P; SILVA, Antonio Jose Roque da; SILVA, Cesar da; DALPIAN, G. M.; FAZZIO, Adalberto. Ab initio studies of the 'Si IND.1-X' 'Ge IND.X' alloy and its intrinsic defects. Computational Materials Science, Amsterdam, v. 22, n. 1-2, p. 62-66, 2001.
    • APA

      Venezuela, P., Silva, A. J. R. da, Silva, C. da, Dalpian, G. M., & Fazzio, A. (2001). Ab initio studies of the 'Si IND.1-X' 'Ge IND.X' alloy and its intrinsic defects. Computational Materials Science, 22( 1-2), 62-66.
    • NLM

      Venezuela P, Silva AJR da, Silva C da, Dalpian GM, Fazzio A. Ab initio studies of the 'Si IND.1-X' 'Ge IND.X' alloy and its intrinsic defects. Computational Materials Science. 2001 ; 22( 1-2): 62-66.
    • Vancouver

      Venezuela P, Silva AJR da, Silva C da, Dalpian GM, Fazzio A. Ab initio studies of the 'Si IND.1-X' 'Ge IND.X' alloy and its intrinsic defects. Computational Materials Science. 2001 ; 22( 1-2): 62-66.
  • Source: Physical Review B. Unidade: IF

    Subjects: SEMICONDUTORES, ESTRUTURA ELETRÔNICA, ESTRUTURA DOS SÓLIDOS

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    • ABNT

      VENEZUELA, P; DALPIAN, G. M.; SILVA, Antonio Jose Roque da; FAZZIO, Adalberto. Ab initio determination of the atomistic structure of 'Si IND.X' 'Ge IND.1-X' alloy. Physical Review B, Woodbury, v. 64, n. 19, p. 3202/1-3202/4, 2001. Disponível em: < http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000064000019193202000001&idtype=cvips >.
    • APA

      Venezuela, P., Dalpian, G. M., Silva, A. J. R. da, & Fazzio, A. (2001). Ab initio determination of the atomistic structure of 'Si IND.X' 'Ge IND.1-X' alloy. Physical Review B, 64( 19), 3202/1-3202/4. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000064000019193202000001&idtype=cvips
    • NLM

      Venezuela P, Dalpian GM, Silva AJR da, Fazzio A. Ab initio determination of the atomistic structure of 'Si IND.X' 'Ge IND.1-X' alloy [Internet]. Physical Review B. 2001 ; 64( 19): 3202/1-3202/4.Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000064000019193202000001&idtype=cvips
    • Vancouver

      Venezuela P, Dalpian GM, Silva AJR da, Fazzio A. Ab initio determination of the atomistic structure of 'Si IND.X' 'Ge IND.1-X' alloy [Internet]. Physical Review B. 2001 ; 64( 19): 3202/1-3202/4.Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000064000019193202000001&idtype=cvips
  • Source: Solid State Communications. Unidade: IF

    Subjects: SEMICONDUTORES, SUPERCONDUTIVIDADE, MUDANÇA DE FASE

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    • ABNT

      SILVA, Cesar R S da; VENEZUELA, P; SILVA, Antonio Jose Roque da; FAZZIO, Adalberto. Theoretical investigation of the pressure induced cubic-diamond-'beta'-tin phase transition in the 'Si IND.0.5''Ge IND.0.5'. Solid State Communications, Oxford, v. 120, n. 9-10, p. 369-373, 2001. Disponível em: < http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5545&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=2c31626c8839eda088d08d3a1744c13b >.
    • APA

      Silva, C. R. S. da, Venezuela, P., Silva, A. J. R. da, & Fazzio, A. (2001). Theoretical investigation of the pressure induced cubic-diamond-'beta'-tin phase transition in the 'Si IND.0.5''Ge IND.0.5'. Solid State Communications, 120( 9-10), 369-373. Recuperado de http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5545&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=2c31626c8839eda088d08d3a1744c13b
    • NLM

      Silva CRS da, Venezuela P, Silva AJR da, Fazzio A. Theoretical investigation of the pressure induced cubic-diamond-'beta'-tin phase transition in the 'Si IND.0.5''Ge IND.0.5' [Internet]. Solid State Communications. 2001 ; 120( 9-10): 369-373.Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5545&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=2c31626c8839eda088d08d3a1744c13b
    • Vancouver

      Silva CRS da, Venezuela P, Silva AJR da, Fazzio A. Theoretical investigation of the pressure induced cubic-diamond-'beta'-tin phase transition in the 'Si IND.0.5''Ge IND.0.5' [Internet]. Solid State Communications. 2001 ; 120( 9-10): 369-373.Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5545&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=2c31626c8839eda088d08d3a1744c13b
  • Source: Journal Non-Crystalline Solids. Conference titles: International Conference on Amorphous and Microcrystalline Semiconductors - Science and Technology - ICAMS. Unidade: IF

    Assunto: QUÍMICA

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    • ABNT

      FAZZIO, Adalberto; VENEZUELA, P. Ab initio study of group V elements in amorphous silicon. Journal Non-Crystalline Solids[S.l: s.n.], 1998.
    • APA

      Fazzio, A., & Venezuela, P. (1998). Ab initio study of group V elements in amorphous silicon. Journal Non-Crystalline Solids. Amsterdam: North-Holland.
    • NLM

      Fazzio A, Venezuela P. Ab initio study of group V elements in amorphous silicon. Journal Non-Crystalline Solids. 1998 ; 227-230 372-375.
    • Vancouver

      Fazzio A, Venezuela P. Ab initio study of group V elements in amorphous silicon. Journal Non-Crystalline Solids. 1998 ; 227-230 372-375.
  • Source: Resumos. Conference titles: Encontro Nacional de Fisica da Materia Condensada. Unidade: IF

    Subjects: MATÉRIA CONDENSADA, MATÉRIA CONDENSADA

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    • ABNT

      VENEZUELA, P; FAZZIO, A. Ab anitio study of group v elements in amorphous silicon and germanium. Anais.. São Paulo: Sociedade Brasileira de Fisica, 1996.
    • APA

      Venezuela, P., & Fazzio, A. (1996). Ab anitio study of group v elements in amorphous silicon and germanium. In Resumos. São Paulo: Sociedade Brasileira de Fisica.
    • NLM

      Venezuela P, Fazzio A. Ab anitio study of group v elements in amorphous silicon and germanium. Resumos. 1996 ;
    • Vancouver

      Venezuela P, Fazzio A. Ab anitio study of group v elements in amorphous silicon and germanium. Resumos. 1996 ;

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