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  • Source: Physics Procedia: Book Series. Conference title: Brazilian Workshop on Semiconductor Physics. Unidade: IF

    Subjects: POÇOS QUÂNTICOS, SEMICONDUTORES, FOTOLUMINESCÊNCIA

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    • ABNT

      TABATA, A et al. Indirect optical transitions from carriers trapped on the delta doping and on the parabolic quantum well. Physics Procedia: Book Series. Amsterdam: Instituto de Física, Universidade de São Paulo. . Acesso em: 03 jul. 2022. , 2012
    • APA

      Tabata, A., Oliveira, J. B. B., Pintão, C. A. F., Silva, E. C. F. da, Lamas, T. E., Duarte, C. A., & Gusev, G. M. (2012). Indirect optical transitions from carriers trapped on the delta doping and on the parabolic quantum well. Physics Procedia: Book Series. Amsterdam: Instituto de Física, Universidade de São Paulo.
    • NLM

      Tabata A, Oliveira JBB, Pintão CAF, Silva ECF da, Lamas TE, Duarte CA, Gusev GM. Indirect optical transitions from carriers trapped on the delta doping and on the parabolic quantum well. Physics Procedia: Book Series. 2012 ;28 53-56.[citado 2022 jul. 03 ]
    • Vancouver

      Tabata A, Oliveira JBB, Pintão CAF, Silva ECF da, Lamas TE, Duarte CA, Gusev GM. Indirect optical transitions from carriers trapped on the delta doping and on the parabolic quantum well. Physics Procedia: Book Series. 2012 ;28 53-56.[citado 2022 jul. 03 ]
  • Source: Resumo. Conference title: Econtro de Física. Unidade: IF

    Subject: SEMICONDUTORES (FÍSICO-QUÍMICA)

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    • ABNT

      CAVALCANTE, J S et al. Growth temperature dependent on the optical properties of 'GA''IN''AS'N/'GA''AS' single quantum well. 2011, Anais.. Foz do Iguaçu: SBF, 2011. . Acesso em: 03 jul. 2022.
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      Cavalcante, J. S., Silva, E. C. F. da, Bassetto Jr, C. A. Z., Oliveira, J. B. B. de, & Tabata, A. (2011). Growth temperature dependent on the optical properties of 'GA''IN''AS'N/'GA''AS' single quantum well. In Resumo. Foz do Iguaçu: SBF.
    • NLM

      Cavalcante JS, Silva ECF da, Bassetto Jr CAZ, Oliveira JBB de, Tabata A. Growth temperature dependent on the optical properties of 'GA''IN''AS'N/'GA''AS' single quantum well. Resumo. 2011 ;[citado 2022 jul. 03 ]
    • Vancouver

      Cavalcante JS, Silva ECF da, Bassetto Jr CAZ, Oliveira JBB de, Tabata A. Growth temperature dependent on the optical properties of 'GA''IN''AS'N/'GA''AS' single quantum well. Resumo. 2011 ;[citado 2022 jul. 03 ]
  • Source: Resumo. Conference title: Econtro de Física. Unidade: IF

    Subject: SEMICONDUTORES (FÍSICO-QUÍMICA)

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      BASSETTO JR, C A Z et al. Studies of strain relaxation on diluted nitride 'IN''GA''AS'N/'GA'AS' single quantum well. 2011, Anais.. Foz do Iguaçu: SBF, 2011. . Acesso em: 03 jul. 2022.
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      Bassetto Jr, C. A. Z., Cavalcante, J. S., Oliveira, J. B. B. de, Tabata, A., & Silva, E. C. F. da. (2011). Studies of strain relaxation on diluted nitride 'IN''GA''AS'N/'GA'AS' single quantum well. In Resumo. Foz do Iguaçu: SBF.
    • NLM

      Bassetto Jr CAZ, Cavalcante JS, Oliveira JBB de, Tabata A, Silva ECF da. Studies of strain relaxation on diluted nitride 'IN''GA''AS'N/'GA'AS' single quantum well. Resumo. 2011 ;[citado 2022 jul. 03 ]
    • Vancouver

      Bassetto Jr CAZ, Cavalcante JS, Oliveira JBB de, Tabata A, Silva ECF da. Studies of strain relaxation on diluted nitride 'IN''GA''AS'N/'GA'AS' single quantum well. Resumo. 2011 ;[citado 2022 jul. 03 ]
  • Source: Resumo. Conference title: Brazilian Workshop on Semiconductor Physics. Unidade: IF

    Subject: SEMICONDUTORES

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      TABATA, A et al. Indirect optical transitions from carriers trapped on the delta doping and on the parabolic quantum well. 2011, Anais.. Juiz de Fora: UFJF, 2011. . Acesso em: 03 jul. 2022.
    • APA

      Tabata, A., Basseto Jr, C. A. Z., Cavalcante, J. S., Oliveira, J. B. B., Silva, E. C. F. da, Gusev, G. M., & Lamas, T. E. (2011). Indirect optical transitions from carriers trapped on the delta doping and on the parabolic quantum well. In Resumo. Juiz de Fora: UFJF.
    • NLM

      Tabata A, Basseto Jr CAZ, Cavalcante JS, Oliveira JBB, Silva ECF da, Gusev GM, Lamas TE. Indirect optical transitions from carriers trapped on the delta doping and on the parabolic quantum well. Resumo. 2011 ;[citado 2022 jul. 03 ]
    • Vancouver

      Tabata A, Basseto Jr CAZ, Cavalcante JS, Oliveira JBB, Silva ECF da, Gusev GM, Lamas TE. Indirect optical transitions from carriers trapped on the delta doping and on the parabolic quantum well. Resumo. 2011 ;[citado 2022 jul. 03 ]
  • Source: Journal Physics - Conference Series. Unidade: IF

    Subject: SEMICONDUTORES

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    • ABNT

      TABATA, A et al. Excitons in undoped AlGaAs/GaAs wide parabolic quantum wells. Journal Physics - Conference Series, v. 210, n. 1, p. 012052-1 - 012052-4, 2010Tradução . . Acesso em: 03 jul. 2022.
    • APA

      Tabata, A., Oliveira, J. B. B., Silva, E. C. F., Lamas, T. E., Duarte, C. A., & Gusev, G. M. (2010). Excitons in undoped AlGaAs/GaAs wide parabolic quantum wells. Journal Physics - Conference Series, 210( 1), 012052-1 - 012052-4. doi:10.1088/1742-6596/210/1/012052
    • NLM

      Tabata A, Oliveira JBB, Silva ECF, Lamas TE, Duarte CA, Gusev GM. Excitons in undoped AlGaAs/GaAs wide parabolic quantum wells. Journal Physics - Conference Series. 2010 ; 210( 1): 012052-1 - 012052-4.[citado 2022 jul. 03 ]
    • Vancouver

      Tabata A, Oliveira JBB, Silva ECF, Lamas TE, Duarte CA, Gusev GM. Excitons in undoped AlGaAs/GaAs wide parabolic quantum wells. Journal Physics - Conference Series. 2010 ; 210( 1): 012052-1 - 012052-4.[citado 2022 jul. 03 ]
  • Source: Journal of Applied Physics. Unidade: IF

    Subjects: POÇOS QUÂNTICOS, ESPALHAMENTO

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      TABATA, A et al. Many-body effects in wide parabolic AlGaAs quantum wells. Journal of Applied Physics, v. 102, n. 9, p. 093715/1-093715/5, 2007Tradução . . Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000102000009093715000001&idtype=cvips. Acesso em: 03 jul. 2022.
    • APA

      Tabata, A., Martins, M. R., Oliveira, J. B. B., Lamas, T. E., Duarte, C. A., Silva, E. C. F. da, & Gusev, G. M. (2007). Many-body effects in wide parabolic AlGaAs quantum wells. Journal of Applied Physics, 102( 9), 093715/1-093715/5. doi:10.1063/1.2809418
    • NLM

      Tabata A, Martins MR, Oliveira JBB, Lamas TE, Duarte CA, Silva ECF da, Gusev GM. Many-body effects in wide parabolic AlGaAs quantum wells [Internet]. Journal of Applied Physics. 2007 ; 102( 9): 093715/1-093715/5.[citado 2022 jul. 03 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000102000009093715000001&idtype=cvips
    • Vancouver

      Tabata A, Martins MR, Oliveira JBB, Lamas TE, Duarte CA, Silva ECF da, Gusev GM. Many-body effects in wide parabolic AlGaAs quantum wells [Internet]. Journal of Applied Physics. 2007 ; 102( 9): 093715/1-093715/5.[citado 2022 jul. 03 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000102000009093715000001&idtype=cvips
  • Source: Book of Abstract. Conference title: Brazilian Workshop on Semiconductor Physics. Unidade: IF

    Subjects: ESTRUTURA ELETRÔNICA, FOTOLUMINESCÊNCIA

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      FERNANDEZ, J R L et al. Near band-edge optical properties of cubic GaN. 2003, Anais.. Fortaleza: DF/UFC, 2003. . Acesso em: 03 jul. 2022.
    • APA

      Fernandez, J. R. L., Noriega, O. C., Soares, J. A. N. T., Tabata, A., Rodrigues, S. C. P., Cerdeira, F., et al. (2003). Near band-edge optical properties of cubic GaN. In Book of Abstract. Fortaleza: DF/UFC.
    • NLM

      Fernandez JRL, Noriega OC, Soares JANT, Tabata A, Rodrigues SCP, Cerdeira F, Meneses EA, Scolfaro LMR, Leite JR, As DJ, Lischka K. Near band-edge optical properties of cubic GaN. Book of Abstract. 2003 ;[citado 2022 jul. 03 ]
    • Vancouver

      Fernandez JRL, Noriega OC, Soares JANT, Tabata A, Rodrigues SCP, Cerdeira F, Meneses EA, Scolfaro LMR, Leite JR, As DJ, Lischka K. Near band-edge optical properties of cubic GaN. Book of Abstract. 2003 ;[citado 2022 jul. 03 ]
  • Source: Journal of Crystal Growth. Unidade: IF

    Subjects: SEMICONDUTORES, ESTRUTURA ELETRÔNICA

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      NORIEGA, O C et al. Photoreflectance studies of optical transitions in cubic GaN grown on GaAs(001) substrates. Journal of Crystal Growth, v. 252, n. 1-3, p. 208-212, 2003Tradução . . Disponível em: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5302&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=841273c738a47f3959822930346abf20. Acesso em: 03 jul. 2022.
    • APA

      Noriega, O. C., Tabata, A., Soares, J. A. N. T., Rodrigues, S. C. P., Leite, J. R., Ribeiro, E., et al. (2003). Photoreflectance studies of optical transitions in cubic GaN grown on GaAs(001) substrates. Journal of Crystal Growth, 252( 1-3), 208-212. doi:10.1016/s0022-0248(02)02517-4
    • NLM

      Noriega OC, Tabata A, Soares JANT, Rodrigues SCP, Leite JR, Ribeiro E, Fernandez JRL, Meneses EA, Cerdeira F, As DJ, Schikora D, Lischka K. Photoreflectance studies of optical transitions in cubic GaN grown on GaAs(001) substrates [Internet]. Journal of Crystal Growth. 2003 ; 252( 1-3): 208-212.[citado 2022 jul. 03 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5302&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=841273c738a47f3959822930346abf20
    • Vancouver

      Noriega OC, Tabata A, Soares JANT, Rodrigues SCP, Leite JR, Ribeiro E, Fernandez JRL, Meneses EA, Cerdeira F, As DJ, Schikora D, Lischka K. Photoreflectance studies of optical transitions in cubic GaN grown on GaAs(001) substrates [Internet]. Journal of Crystal Growth. 2003 ; 252( 1-3): 208-212.[citado 2022 jul. 03 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5302&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=841273c738a47f3959822930346abf20
  • Source: Programa e Livro de Resumos. Conference title: Encontro da Sociedade Brasileira de Pesquisa em Materiais. Unidade: IF

    Subjects: MATERIAIS, MATÉRIA CONDENSADA, ESTRUTURA ELETRÔNICA

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      ORTIZ DE ZEVALLOS, Angela M et al. Influence of plasma etching and thermal annealing conditions on the electroluminescence of GaN pn junctions. 2003, Anais.. Rio de Janeiro: SBPMat, 2003. . Acesso em: 03 jul. 2022.
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      Ortiz de Zevallos, A. M., Ribeiro, M., Leite, J. R., Tabata, A., & Freitas Junior, J. A. (2003). Influence of plasma etching and thermal annealing conditions on the electroluminescence of GaN pn junctions. In Programa e Livro de Resumos. Rio de Janeiro: SBPMat.
    • NLM

      Ortiz de Zevallos AM, Ribeiro M, Leite JR, Tabata A, Freitas Junior JA. Influence of plasma etching and thermal annealing conditions on the electroluminescence of GaN pn junctions. Programa e Livro de Resumos. 2003 ;[citado 2022 jul. 03 ]
    • Vancouver

      Ortiz de Zevallos AM, Ribeiro M, Leite JR, Tabata A, Freitas Junior JA. Influence of plasma etching and thermal annealing conditions on the electroluminescence of GaN pn junctions. Programa e Livro de Resumos. 2003 ;[citado 2022 jul. 03 ]
  • Source: Physica E. Unidade: IF

    Subjects: SEMICONDUTIVIDADE, TERMODINÂMICA, ESPECTROSCOPIA RAMAN, ESPECTROSCOPIA DE RAIO X

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      TELES, L. K. et al. Phase separation and gap bowing in zinc-blende InGaN, InAlN, BGaN, and BAlN alloy layers. Physica E, v. 13, n. 2-4, p. 1086-1089, 2002Tradução . . Disponível em: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=6159&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=17f1fea449f699588a0075ae9a65600c. Acesso em: 03 jul. 2022.
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      Teles, L. K., Furthmüller, J., Scolfaro, L. M. R., Tabata, A., Leite, J. R., Bechstedt, F., et al. (2002). Phase separation and gap bowing in zinc-blende InGaN, InAlN, BGaN, and BAlN alloy layers. Physica E, 13( 2-4), 1086-1089. doi:10.1016/s1386-9477(02)00309-0
    • NLM

      Teles LK, Furthmüller J, Scolfaro LMR, Tabata A, Leite JR, Bechstedt F, Frey T, As DJ, Lischka K. Phase separation and gap bowing in zinc-blende InGaN, InAlN, BGaN, and BAlN alloy layers [Internet]. Physica E. 2002 ; 13( 2-4): 1086-1089.[citado 2022 jul. 03 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=6159&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=17f1fea449f699588a0075ae9a65600c
    • Vancouver

      Teles LK, Furthmüller J, Scolfaro LMR, Tabata A, Leite JR, Bechstedt F, Frey T, As DJ, Lischka K. Phase separation and gap bowing in zinc-blende InGaN, InAlN, BGaN, and BAlN alloy layers [Internet]. Physica E. 2002 ; 13( 2-4): 1086-1089.[citado 2022 jul. 03 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=6159&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=17f1fea449f699588a0075ae9a65600c
  • Source: Applied Physics Letters. Unidade: IF

    Subjects: SEMICONDUTORES, ESPECTROSCOPIA RAMAN

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      TABATA, A et al. Phase separation suppression in InGaN epitaxial layers due to biaxial strain. Applied Physics Letters, v. 80, n. 5, p. 769-771, 2002Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000080000005000769000001&idtype=cvips. Acesso em: 03 jul. 2022.
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      Tabata, A., Teles, L. K., Scolfaro, L. M. R., Leite, J. R., Kharchenko, A., Frey, T., et al. (2002). Phase separation suppression in InGaN epitaxial layers due to biaxial strain. Applied Physics Letters, 80( 5), 769-771. doi:10.1063/1.1436270
    • NLM

      Tabata A, Teles LK, Scolfaro LMR, Leite JR, Kharchenko A, Frey T, As DJ, Schikora D, Lischka K, Furthmüller J, Bechstedt F. Phase separation suppression in InGaN epitaxial layers due to biaxial strain [Internet]. Applied Physics Letters. 2002 ; 80( 5): 769-771.[citado 2022 jul. 03 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000080000005000769000001&idtype=cvips
    • Vancouver

      Tabata A, Teles LK, Scolfaro LMR, Leite JR, Kharchenko A, Frey T, As DJ, Schikora D, Lischka K, Furthmüller J, Bechstedt F. Phase separation suppression in InGaN epitaxial layers due to biaxial strain [Internet]. Applied Physics Letters. 2002 ; 80( 5): 769-771.[citado 2022 jul. 03 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000080000005000769000001&idtype=cvips
  • Source: Applied Physics Letters. Unidade: IF

    Subject: FOTOLUMINESCÊNCIA

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      HUSBERG, O et al. Photoluminescence from quantum dots in cubic GaN/InGaN/GaN double heterostructure. Applied Physics Letters, v. 79, n. 9, p. 1243-1245, 2001Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000079000009001243000001&idtype=cvips. Acesso em: 03 jul. 2022.
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      Husberg, O., Khartchenko, A., As, D. J., Vogelsang, H., Frey, T., Schikora, D., et al. (2001). Photoluminescence from quantum dots in cubic GaN/InGaN/GaN double heterostructure. Applied Physics Letters, 79( 9), 1243-1245. doi:10.1063/1.1396314
    • NLM

      Husberg O, Khartchenko A, As DJ, Vogelsang H, Frey T, Schikora D, Noriega OC, Tabata A, Leite JR. Photoluminescence from quantum dots in cubic GaN/InGaN/GaN double heterostructure [Internet]. Applied Physics Letters. 2001 ; 79( 9): 1243-1245.[citado 2022 jul. 03 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000079000009001243000001&idtype=cvips
    • Vancouver

      Husberg O, Khartchenko A, As DJ, Vogelsang H, Frey T, Schikora D, Noriega OC, Tabata A, Leite JR. Photoluminescence from quantum dots in cubic GaN/InGaN/GaN double heterostructure [Internet]. Applied Physics Letters. 2001 ; 79( 9): 1243-1245.[citado 2022 jul. 03 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000079000009001243000001&idtype=cvips
  • Source: Resumos. Conference title: Encontro Nacional de Física da Matéria Condensada. Unidade: IFSC

    Subject: MATÉRIA CONDENSADA

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      FERNANDEZ, José Rafael León et al. UBIC GaN:Si layers investigated by Raman scattering spectroscopy. 2001, Anais.. São Paulo: SBF, 2001. . Acesso em: 03 jul. 2022.
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      Fernandez, J. R. L., Silva, M. T. O., Pusep, Y. A., Chitta, V. A., Tabata, A., Noriega, O. C., et al. (2001). UBIC GaN:Si layers investigated by Raman scattering spectroscopy. In Resumos. São Paulo: SBF.
    • NLM

      Fernandez JRL, Silva MTO, Pusep YA, Chitta VA, Tabata A, Noriega OC, Leite JR, Abramof E, As DJ, Schikora D, Lischka K. UBIC GaN:Si layers investigated by Raman scattering spectroscopy. Resumos. 2001 ;[citado 2022 jul. 03 ]
    • Vancouver

      Fernandez JRL, Silva MTO, Pusep YA, Chitta VA, Tabata A, Noriega OC, Leite JR, Abramof E, As DJ, Schikora D, Lischka K. UBIC GaN:Si layers investigated by Raman scattering spectroscopy. Resumos. 2001 ;[citado 2022 jul. 03 ]
  • Source: Journal of Crystal Growth. Unidade: IF

    Subjects: MATERIAIS (ANÁLISE;TESTES), RESISTÊNCIA DOS MATERIAIS, DIELÉTRICOS, RESISTÊNCIA ELÉTRICA

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      FERNANDEZ, J R L et al. Electrical resistivity and band-gap shift of Si-doped GaN and metal-nometal transition in cubic GaN, InN and AlN systems. Journal of Crystal Growth, v. 231, n. 3, p. 420-427, 2001Tradução . . Disponível em: http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=00220248&issue=v231i0003&article=420_erabsocgiaas&form=pdf&file=file.pdf. Acesso em: 03 jul. 2022.
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      Fernandez, J. R. L., Araujo, C. M., Silva, A. F. da, Leite, J. R., Sernelius, B. E., Tabata, A., et al. (2001). Electrical resistivity and band-gap shift of Si-doped GaN and metal-nometal transition in cubic GaN, InN and AlN systems. Journal of Crystal Growth, 231( 3), 420-427. doi:10.1016/s0022-0248(01)01473-7
    • NLM

      Fernandez JRL, Araujo CM, Silva AF da, Leite JR, Sernelius BE, Tabata A, Abramog E, Chitta VA, Persson C, Ahuja R, Pepe I, As DJ, Frey T, Schikora D, Lischka K. Electrical resistivity and band-gap shift of Si-doped GaN and metal-nometal transition in cubic GaN, InN and AlN systems [Internet]. Journal of Crystal Growth. 2001 ; 231( 3): 420-427.[citado 2022 jul. 03 ] Available from: http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=00220248&issue=v231i0003&article=420_erabsocgiaas&form=pdf&file=file.pdf
    • Vancouver

      Fernandez JRL, Araujo CM, Silva AF da, Leite JR, Sernelius BE, Tabata A, Abramog E, Chitta VA, Persson C, Ahuja R, Pepe I, As DJ, Frey T, Schikora D, Lischka K. Electrical resistivity and band-gap shift of Si-doped GaN and metal-nometal transition in cubic GaN, InN and AlN systems [Internet]. Journal of Crystal Growth. 2001 ; 231( 3): 420-427.[citado 2022 jul. 03 ] Available from: http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=00220248&issue=v231i0003&article=420_erabsocgiaas&form=pdf&file=file.pdf
  • Source: Journal of Crstal Growth. Unidade: IF

    Subjects: DIFRAÇÃO POR RAIOS X, MAGNETISMO, SEMICONDUTORES, MATÉRIA CONDENSADA, ÓPTICA (PROPRIEDADES)

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      AS, D J et al. MBE growth of cubic 'Al IND.Y' 'Ga IND.1-Y'N/GaN heterostructures, vibrational and optical properties. Journal of Crstal Growth, v. 230, n. 3-4, p. 421-425, 2001Tradução . . Disponível em: http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=00220248&issue=v230i3-4&article=421_mgocahvaop&form=pdf&file=file.pdf. Acesso em: 03 jul. 2022.
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      As, D. J., Frey, T., Barttls, M., Lischka, K., Goldhahn, R., Shokhovets, S., et al. (2001). MBE growth of cubic 'Al IND.Y' 'Ga IND.1-Y'N/GaN heterostructures, vibrational and optical properties. Journal of Crstal Growth, 230( 3-4), 421-425. Recuperado de http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=00220248&issue=v230i3-4&article=421_mgocahvaop&form=pdf&file=file.pdf
    • NLM

      As DJ, Frey T, Barttls M, Lischka K, Goldhahn R, Shokhovets S, Tabata A, Fernandez JRL, Leite JR. MBE growth of cubic 'Al IND.Y' 'Ga IND.1-Y'N/GaN heterostructures, vibrational and optical properties [Internet]. Journal of Crstal Growth. 2001 ; 230( 3-4): 421-425.[citado 2022 jul. 03 ] Available from: http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=00220248&issue=v230i3-4&article=421_mgocahvaop&form=pdf&file=file.pdf
    • Vancouver

      As DJ, Frey T, Barttls M, Lischka K, Goldhahn R, Shokhovets S, Tabata A, Fernandez JRL, Leite JR. MBE growth of cubic 'Al IND.Y' 'Ga IND.1-Y'N/GaN heterostructures, vibrational and optical properties [Internet]. Journal of Crstal Growth. 2001 ; 230( 3-4): 421-425.[citado 2022 jul. 03 ] Available from: http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=00220248&issue=v230i3-4&article=421_mgocahvaop&form=pdf&file=file.pdf
  • Source: Journal of Applied Physics. Unidade: IF

    Subjects: MATÉRIA CONDENSADA, MICROSCOPIA ELETRÔNICA, ESTRUTURA ELETRÔNICA, FOTOLUMINESCÊNCIA, SUPERFÍCIE FÍSICA, TERMODINÂMICA

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      MARTINI, S. et al. Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces. Journal of Applied Physics, v. 90, n. 5, p. 2280-2289, 2001Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000090000005002273000001&idtype=cvips. Acesso em: 03 jul. 2022.
    • APA

      Martini, S., Quivy, A. A., Tabata, A., & Leite, J. R. (2001). Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces. Journal of Applied Physics, 90( 5), 2280-2289. doi:10.1063/1.1389336
    • NLM

      Martini S, Quivy AA, Tabata A, Leite JR. Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces [Internet]. Journal of Applied Physics. 2001 ; 90( 5): 2280-2289.[citado 2022 jul. 03 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000090000005002273000001&idtype=cvips
    • Vancouver

      Martini S, Quivy AA, Tabata A, Leite JR. Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces [Internet]. Journal of Applied Physics. 2001 ; 90( 5): 2280-2289.[citado 2022 jul. 03 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000090000005002273000001&idtype=cvips
  • Source: Journal of Applied Physics. Unidade: IF

    Subjects: DIFRAÇÃO POR RAIOS X, ESPECTROSCOPIA MOLECULAR

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      FREY, T et al. Structural and vibrational properties of molecular beam epitaxy grown cubic (Al, Ga)N/GaN heterostructures. Journal of Applied Physics, v. 89, n. 5, p. 2631-2634, 2001Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000089000005002631000001&idtype=cvips. Acesso em: 03 jul. 2022.
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      Frey, T., As, D. J., Bartels, M., Pawlis, A., Tabata, A., Fernandez, J. R. L., et al. (2001). Structural and vibrational properties of molecular beam epitaxy grown cubic (Al, Ga)N/GaN heterostructures. Journal of Applied Physics, 89( 5), 2631-2634. doi:10.1063/1.1345858
    • NLM

      Frey T, As DJ, Bartels M, Pawlis A, Tabata A, Fernandez JRL, Silva MTO, Leite JR, Haug C, Brenn R. Structural and vibrational properties of molecular beam epitaxy grown cubic (Al, Ga)N/GaN heterostructures [Internet]. Journal of Applied Physics. 2001 ; 89( 5): 2631-2634.[citado 2022 jul. 03 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000089000005002631000001&idtype=cvips
    • Vancouver

      Frey T, As DJ, Bartels M, Pawlis A, Tabata A, Fernandez JRL, Silva MTO, Leite JR, Haug C, Brenn R. Structural and vibrational properties of molecular beam epitaxy grown cubic (Al, Ga)N/GaN heterostructures [Internet]. Journal of Applied Physics. 2001 ; 89( 5): 2631-2634.[citado 2022 jul. 03 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000089000005002631000001&idtype=cvips
  • Source: Materials Science Forum. Conference title: Proceedings of the International Conference on Silicon Carbide and Related Materials. Unidade: IF

    Subject: MATÉRIA CONDENSADA

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      LEMOS, V et al. Resonant raman scattering and the emission process in zincblende-'In IND.X''Ga IND.1-X'N. Materials Science Forum. Zuerich: Trans Tech Publications. . Acesso em: 03 jul. 2022. , 2000
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      Lemos, V., Silveira, E., Leite, J. R., Tabata, A., Trentin, R., Frey, T., et al. (2000). Resonant raman scattering and the emission process in zincblende-'In IND.X''Ga IND.1-X'N. Materials Science Forum. Zuerich: Trans Tech Publications.
    • NLM

      Lemos V, Silveira E, Leite JR, Tabata A, Trentin R, Frey T, As DJ, Schikora D, Lischka K. Resonant raman scattering and the emission process in zincblende-'In IND.X''Ga IND.1-X'N. Materials Science Forum. 2000 ; 338-342 1595-1598.[citado 2022 jul. 03 ]
    • Vancouver

      Lemos V, Silveira E, Leite JR, Tabata A, Trentin R, Frey T, As DJ, Schikora D, Lischka K. Resonant raman scattering and the emission process in zincblende-'In IND.X''Ga IND.1-X'N. Materials Science Forum. 2000 ; 338-342 1595-1598.[citado 2022 jul. 03 ]
  • Source: Journal of Vacuum Science & Technology B. Unidade: IF

    Subjects: FÍSICA, INTERFACE

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    • ABNT

      MARTINI, S. et al. Reduction of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on vicinal GaAs(001) substrates. Journal of Vacuum Science & Technology B, v. 18, n. 4, p. 1991-1996, 2000Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JVTBD9000018000004001991000001&idtype=cvips. Acesso em: 03 jul. 2022.
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      Martini, S., Quivy, A. A., Tabata, A., & Leite, J. R. (2000). Reduction of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on vicinal GaAs(001) substrates. Journal of Vacuum Science & Technology B, 18( 4), 1991-1996. doi:10.1116/1.1303851
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      Martini S, Quivy AA, Tabata A, Leite JR. Reduction of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on vicinal GaAs(001) substrates [Internet]. Journal of Vacuum Science & Technology B. 2000 ; 18( 4): 1991-1996.[citado 2022 jul. 03 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JVTBD9000018000004001991000001&idtype=cvips
    • Vancouver

      Martini S, Quivy AA, Tabata A, Leite JR. Reduction of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on vicinal GaAs(001) substrates [Internet]. Journal of Vacuum Science & Technology B. 2000 ; 18( 4): 1991-1996.[citado 2022 jul. 03 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JVTBD9000018000004001991000001&idtype=cvips
  • Source: Proceedings. Conference title: International Workshop on Nitride Semiconductors. Unidade: IF

    Subjects: MATÉRIA CONDENSADA, SEMICONDUTORES

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    • ABNT

      FERNANDEZ, J R L et al. Overdamped electron plasma oscillations in cubic 'Al IND.X' 'Ga IND.1-X'N layers observed by raman scattering spectrocopy. 2000, Anais.. Tokyo: The Institute of Pure and Applied Physics-IPAP, 2000. . Acesso em: 03 jul. 2022.
    • APA

      Fernandez, J. R. L., Tabata, A., Chitta, V. A., As, D. J., Frey, T., Noriega, O. C., et al. (2000). Overdamped electron plasma oscillations in cubic 'Al IND.X' 'Ga IND.1-X'N layers observed by raman scattering spectrocopy. In Proceedings. Tokyo: The Institute of Pure and Applied Physics-IPAP.
    • NLM

      Fernandez JRL, Tabata A, Chitta VA, As DJ, Frey T, Noriega OC, Silva MTO, Abramof E, Schikora D, Lischka K, Leite JR. Overdamped electron plasma oscillations in cubic 'Al IND.X' 'Ga IND.1-X'N layers observed by raman scattering spectrocopy. Proceedings. 2000 ;[citado 2022 jul. 03 ]
    • Vancouver

      Fernandez JRL, Tabata A, Chitta VA, As DJ, Frey T, Noriega OC, Silva MTO, Abramof E, Schikora D, Lischka K, Leite JR. Overdamped electron plasma oscillations in cubic 'Al IND.X' 'Ga IND.1-X'N layers observed by raman scattering spectrocopy. Proceedings. 2000 ;[citado 2022 jul. 03 ]

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