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Trabalho de evento-anais periodico
Indirect optical transitions from carriers trapped on the delta doping and on the parabolic quantum well (2012)
Tabata, A; Oliveira, J B B; Pintão, C A F; Silva, Euzi Conceição Fernandes da; Lamas, Tomas Eriksson; Duarte, C A; Gusev, Guennadii Michailovich
Source: Physics Procedia: Book Series. Conference title: Brazilian Workshop on Semiconductor Physics. Unidade: IF
Subjects: POÇOS QUÂNTICOS, SEMICONDUTORES, FOTOLUMINESCÊNCIA
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ABNT
TABATA, A et al. Indirect optical transitions from carriers trapped on the delta doping and on the parabolic quantum well. Physics Procedia: Book Series. Amsterdam: Instituto de Física, Universidade de São Paulo. . Acesso em: 03 jul. 2022. , 2012
APA
Tabata, A., Oliveira, J. B. B., Pintão, C. A. F., Silva, E. C. F. da, Lamas, T. E., Duarte, C. A., & Gusev, G. M. (2012). Indirect optical transitions from carriers trapped on the delta doping and on the parabolic quantum well. Physics Procedia: Book Series. Amsterdam: Instituto de Física, Universidade de São Paulo.
NLM
Tabata A, Oliveira JBB, Pintão CAF, Silva ECF da, Lamas TE, Duarte CA, Gusev GM. Indirect optical transitions from carriers trapped on the delta doping and on the parabolic quantum well. Physics Procedia: Book Series. 2012 ;28 53-56.[citado 2022 jul. 03 ]
Vancouver
Tabata A, Oliveira JBB, Pintão CAF, Silva ECF da, Lamas TE, Duarte CA, Gusev GM. Indirect optical transitions from carriers trapped on the delta doping and on the parabolic quantum well. Physics Procedia: Book Series. 2012 ;28 53-56.[citado 2022 jul. 03 ]
Trabalho de evento-resumo
Growth temperature dependent on the optical properties of 'GA''IN''AS'N/'GA''AS' single quantum well (2011)
Cavalcante, J S; Silva, E C F da; Bassetto Jr, C A Z; Oliveira, J B B de; Tabata, A
Source: Resumo. Conference title: Econtro de Física. Unidade: IF
Subject: SEMICONDUTORES (FÍSICO-QUÍMICA)
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ABNT
CAVALCANTE, J S et al. Growth temperature dependent on the optical properties of 'GA''IN''AS'N/'GA''AS' single quantum well. 2011, Anais.. Foz do Iguaçu: SBF, 2011. . Acesso em: 03 jul. 2022.
APA
Cavalcante, J. S., Silva, E. C. F. da, Bassetto Jr, C. A. Z., Oliveira, J. B. B. de, & Tabata, A. (2011). Growth temperature dependent on the optical properties of 'GA''IN''AS'N/'GA''AS' single quantum well. In Resumo. Foz do Iguaçu: SBF.
NLM
Cavalcante JS, Silva ECF da, Bassetto Jr CAZ, Oliveira JBB de, Tabata A. Growth temperature dependent on the optical properties of 'GA''IN''AS'N/'GA''AS' single quantum well. Resumo. 2011 ;[citado 2022 jul. 03 ]
Vancouver
Cavalcante JS, Silva ECF da, Bassetto Jr CAZ, Oliveira JBB de, Tabata A. Growth temperature dependent on the optical properties of 'GA''IN''AS'N/'GA''AS' single quantum well. Resumo. 2011 ;[citado 2022 jul. 03 ]
Trabalho de evento-resumo
Studies of strain relaxation on diluted nitride 'IN''GA''AS'N/'GA'AS' single quantum well (2011)
Bassetto Jr, C A Z; Cavalcante, J S; Oliveira, J B B de; Tabata, A; Silva, E C F da
Source: Resumo. Conference title: Econtro de Física. Unidade: IF
Subject: SEMICONDUTORES (FÍSICO-QUÍMICA)
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ABNT
BASSETTO JR, C A Z et al. Studies of strain relaxation on diluted nitride 'IN''GA''AS'N/'GA'AS' single quantum well. 2011, Anais.. Foz do Iguaçu: SBF, 2011. . Acesso em: 03 jul. 2022.
APA
Bassetto Jr, C. A. Z., Cavalcante, J. S., Oliveira, J. B. B. de, Tabata, A., & Silva, E. C. F. da. (2011). Studies of strain relaxation on diluted nitride 'IN''GA''AS'N/'GA'AS' single quantum well. In Resumo. Foz do Iguaçu: SBF.
NLM
Bassetto Jr CAZ, Cavalcante JS, Oliveira JBB de, Tabata A, Silva ECF da. Studies of strain relaxation on diluted nitride 'IN''GA''AS'N/'GA'AS' single quantum well. Resumo. 2011 ;[citado 2022 jul. 03 ]
Vancouver
Bassetto Jr CAZ, Cavalcante JS, Oliveira JBB de, Tabata A, Silva ECF da. Studies of strain relaxation on diluted nitride 'IN''GA''AS'N/'GA'AS' single quantum well. Resumo. 2011 ;[citado 2022 jul. 03 ]
Trabalho de evento-resumo
Indirect optical transitions from carriers trapped on the delta doping and on the parabolic quantum well (2011)
Tabata, A; Basseto Jr, C A Z; Cavalcante, J S; Oliveira, J B B; Silva, E C F da; Gusev, G M; Lamas, T E
Source: Resumo. Conference title: Brazilian Workshop on Semiconductor Physics. Unidade: IF
Subject: SEMICONDUTORES
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ABNT
TABATA, A et al. Indirect optical transitions from carriers trapped on the delta doping and on the parabolic quantum well. 2011, Anais.. Juiz de Fora: UFJF, 2011. . Acesso em: 03 jul. 2022.
APA
Tabata, A., Basseto Jr, C. A. Z., Cavalcante, J. S., Oliveira, J. B. B., Silva, E. C. F. da, Gusev, G. M., & Lamas, T. E. (2011). Indirect optical transitions from carriers trapped on the delta doping and on the parabolic quantum well. In Resumo. Juiz de Fora: UFJF.
NLM
Tabata A, Basseto Jr CAZ, Cavalcante JS, Oliveira JBB, Silva ECF da, Gusev GM, Lamas TE. Indirect optical transitions from carriers trapped on the delta doping and on the parabolic quantum well. Resumo. 2011 ;[citado 2022 jul. 03 ]
Vancouver
Tabata A, Basseto Jr CAZ, Cavalcante JS, Oliveira JBB, Silva ECF da, Gusev GM, Lamas TE. Indirect optical transitions from carriers trapped on the delta doping and on the parabolic quantum well. Resumo. 2011 ;[citado 2022 jul. 03 ]
Artigo de periodico
Excitons in undoped AlGaAs/GaAs wide parabolic quantum wells (2010)
Tabata, A; Oliveira, J. B. B; Silva, E C F; Lamas, Tomas Eriksson; Duarte, C A; Gusev, Guennadii Michailovich
Source: Journal Physics - Conference Series. Unidade: IF
Subject: SEMICONDUTORES
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ABNT
TABATA, A et al. Excitons in undoped AlGaAs/GaAs wide parabolic quantum wells. Journal Physics - Conference Series, v. 210, n. 1, p. 012052-1 - 012052-4, 2010Tradução . . Acesso em: 03 jul. 2022.
APA
Tabata, A., Oliveira, J. B. B., Silva, E. C. F., Lamas, T. E., Duarte, C. A., & Gusev, G. M. (2010). Excitons in undoped AlGaAs/GaAs wide parabolic quantum wells. Journal Physics - Conference Series, 210( 1), 012052-1 - 012052-4. doi:10.1088/1742-6596/210/1/012052
NLM
Tabata A, Oliveira JBB, Silva ECF, Lamas TE, Duarte CA, Gusev GM. Excitons in undoped AlGaAs/GaAs wide parabolic quantum wells. Journal Physics - Conference Series. 2010 ; 210( 1): 012052-1 - 012052-4.[citado 2022 jul. 03 ]
Vancouver
Tabata A, Oliveira JBB, Silva ECF, Lamas TE, Duarte CA, Gusev GM. Excitons in undoped AlGaAs/GaAs wide parabolic quantum wells. Journal Physics - Conference Series. 2010 ; 210( 1): 012052-1 - 012052-4.[citado 2022 jul. 03 ]
Artigo de periodico
Many-body effects in wide parabolic AlGaAs quantum wells (2007)
Tabata, A; Martins, M R; Oliveira, J B B; Lamas, T. E.; Duarte, C A; Silva, Euzi Conceicao Fernandes da; Gusev, Guennadii Michailovich
Source: Journal of Applied Physics. Unidade: IF
Subjects: POÇOS QUÂNTICOS, ESPALHAMENTO
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ABNT
TABATA, A et al. Many-body effects in wide parabolic AlGaAs quantum wells. Journal of Applied Physics, v. 102, n. 9, p. 093715/1-093715/5, 2007Tradução . . Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000102000009093715000001&idtype=cvips. Acesso em: 03 jul. 2022.
APA
Tabata, A., Martins, M. R., Oliveira, J. B. B., Lamas, T. E., Duarte, C. A., Silva, E. C. F. da, & Gusev, G. M. (2007). Many-body effects in wide parabolic AlGaAs quantum wells. Journal of Applied Physics, 102( 9), 093715/1-093715/5. doi:10.1063/1.2809418
NLM
Tabata A, Martins MR, Oliveira JBB, Lamas TE, Duarte CA, Silva ECF da, Gusev GM. Many-body effects in wide parabolic AlGaAs quantum wells [Internet]. Journal of Applied Physics. 2007 ; 102( 9): 093715/1-093715/5.[citado 2022 jul. 03 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000102000009093715000001&idtype=cvips
Vancouver
Tabata A, Martins MR, Oliveira JBB, Lamas TE, Duarte CA, Silva ECF da, Gusev GM. Many-body effects in wide parabolic AlGaAs quantum wells [Internet]. Journal of Applied Physics. 2007 ; 102( 9): 093715/1-093715/5.[citado 2022 jul. 03 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000102000009093715000001&idtype=cvips
Trabalho de evento-resumo
Near band-edge optical properties of cubic GaN (2003)
Fernandez, J R L; Noriega, O C; Soares, J A N T; Tabata, A; Rodrigues, S C P; Cerdeira, F; Meneses, E A; Scolfaro, Luisa Maria Ribeiro; Leite, J. R.; As, Donat Joseph; Lischka, K
Source: Book of Abstract. Conference title: Brazilian Workshop on Semiconductor Physics. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, FOTOLUMINESCÊNCIA
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ABNT
FERNANDEZ, J R L et al. Near band-edge optical properties of cubic GaN. 2003, Anais.. Fortaleza: DF/UFC, 2003. . Acesso em: 03 jul. 2022.
APA
Fernandez, J. R. L., Noriega, O. C., Soares, J. A. N. T., Tabata, A., Rodrigues, S. C. P., Cerdeira, F., et al. (2003). Near band-edge optical properties of cubic GaN. In Book of Abstract. Fortaleza: DF/UFC.
NLM
Fernandez JRL, Noriega OC, Soares JANT, Tabata A, Rodrigues SCP, Cerdeira F, Meneses EA, Scolfaro LMR, Leite JR, As DJ, Lischka K. Near band-edge optical properties of cubic GaN. Book of Abstract. 2003 ;[citado 2022 jul. 03 ]
Vancouver
Fernandez JRL, Noriega OC, Soares JANT, Tabata A, Rodrigues SCP, Cerdeira F, Meneses EA, Scolfaro LMR, Leite JR, As DJ, Lischka K. Near band-edge optical properties of cubic GaN. Book of Abstract. 2003 ;[citado 2022 jul. 03 ]
Artigo de periodico
Photoreflectance studies of optical transitions in cubic GaN grown on GaAs(001) substrates (2003)
Noriega, O C; Tabata, A; Soares, J A N T; Rodrigues, S C P; Leite, J. R.; Ribeiro, E; Fernandez, J R L; Meneses, E A; Cerdeira, F; As, D J; Schikora, D; Lischka, K
Source: Journal of Crystal Growth. Unidade: IF
Subjects: SEMICONDUTORES, ESTRUTURA ELETRÔNICA
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ABNT
NORIEGA, O C et al. Photoreflectance studies of optical transitions in cubic GaN grown on GaAs(001) substrates. Journal of Crystal Growth, v. 252, n. 1-3, p. 208-212, 2003Tradução . . Disponível em: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5302&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=841273c738a47f3959822930346abf20. Acesso em: 03 jul. 2022.
APA
Noriega, O. C., Tabata, A., Soares, J. A. N. T., Rodrigues, S. C. P., Leite, J. R., Ribeiro, E., et al. (2003). Photoreflectance studies of optical transitions in cubic GaN grown on GaAs(001) substrates. Journal of Crystal Growth, 252( 1-3), 208-212. doi:10.1016/s0022-0248(02)02517-4
NLM
Noriega OC, Tabata A, Soares JANT, Rodrigues SCP, Leite JR, Ribeiro E, Fernandez JRL, Meneses EA, Cerdeira F, As DJ, Schikora D, Lischka K. Photoreflectance studies of optical transitions in cubic GaN grown on GaAs(001) substrates [Internet]. Journal of Crystal Growth. 2003 ; 252( 1-3): 208-212.[citado 2022 jul. 03 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5302&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=841273c738a47f3959822930346abf20
Vancouver
Noriega OC, Tabata A, Soares JANT, Rodrigues SCP, Leite JR, Ribeiro E, Fernandez JRL, Meneses EA, Cerdeira F, As DJ, Schikora D, Lischka K. Photoreflectance studies of optical transitions in cubic GaN grown on GaAs(001) substrates [Internet]. Journal of Crystal Growth. 2003 ; 252( 1-3): 208-212.[citado 2022 jul. 03 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5302&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=841273c738a47f3959822930346abf20
Trabalho de evento-resumo
Influence of plasma etching and thermal annealing conditions on the electroluminescence of GaN pn junctions (2003)
Ortiz de Zevallos, Angela M; Ribeiro, M; Leite, J. R.; Tabata, A; Freitas Junior, J A
Source: Programa e Livro de Resumos. Conference title: Encontro da Sociedade Brasileira de Pesquisa em Materiais. Unidade: IF
Subjects: MATERIAIS, MATÉRIA CONDENSADA, ESTRUTURA ELETRÔNICA
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ABNT
ORTIZ DE ZEVALLOS, Angela M et al. Influence of plasma etching and thermal annealing conditions on the electroluminescence of GaN pn junctions. 2003, Anais.. Rio de Janeiro: SBPMat, 2003. . Acesso em: 03 jul. 2022.
APA
Ortiz de Zevallos, A. M., Ribeiro, M., Leite, J. R., Tabata, A., & Freitas Junior, J. A. (2003). Influence of plasma etching and thermal annealing conditions on the electroluminescence of GaN pn junctions. In Programa e Livro de Resumos. Rio de Janeiro: SBPMat.
NLM
Ortiz de Zevallos AM, Ribeiro M, Leite JR, Tabata A, Freitas Junior JA. Influence of plasma etching and thermal annealing conditions on the electroluminescence of GaN pn junctions. Programa e Livro de Resumos. 2003 ;[citado 2022 jul. 03 ]
Vancouver
Ortiz de Zevallos AM, Ribeiro M, Leite JR, Tabata A, Freitas Junior JA. Influence of plasma etching and thermal annealing conditions on the electroluminescence of GaN pn junctions. Programa e Livro de Resumos. 2003 ;[citado 2022 jul. 03 ]
Artigo de periodico
Phase separation and gap bowing in zinc-blende InGaN, InAlN, BGaN, and BAlN alloy layers (2002)
Teles, L. K.; Furthmüller, J; Scolfaro, Luisa Maria Ribeiro; Tabata, A; Leite, J. R.; Bechstedt, F; Frey, T; As, D J; Lischka, K
Source: Physica E. Unidade: IF
Subjects: SEMICONDUTIVIDADE, TERMODINÂMICA, ESPECTROSCOPIA RAMAN, ESPECTROSCOPIA DE RAIO X
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ABNT
TELES, L. K. et al. Phase separation and gap bowing in zinc-blende InGaN, InAlN, BGaN, and BAlN alloy layers. Physica E, v. 13, n. 2-4, p. 1086-1089, 2002Tradução . . Disponível em: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=6159&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=17f1fea449f699588a0075ae9a65600c. Acesso em: 03 jul. 2022.
APA
Teles, L. K., Furthmüller, J., Scolfaro, L. M. R., Tabata, A., Leite, J. R., Bechstedt, F., et al. (2002). Phase separation and gap bowing in zinc-blende InGaN, InAlN, BGaN, and BAlN alloy layers. Physica E, 13( 2-4), 1086-1089. doi:10.1016/s1386-9477(02)00309-0
NLM
Teles LK, Furthmüller J, Scolfaro LMR, Tabata A, Leite JR, Bechstedt F, Frey T, As DJ, Lischka K. Phase separation and gap bowing in zinc-blende InGaN, InAlN, BGaN, and BAlN alloy layers [Internet]. Physica E. 2002 ; 13( 2-4): 1086-1089.[citado 2022 jul. 03 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=6159&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=17f1fea449f699588a0075ae9a65600c
Vancouver
Teles LK, Furthmüller J, Scolfaro LMR, Tabata A, Leite JR, Bechstedt F, Frey T, As DJ, Lischka K. Phase separation and gap bowing in zinc-blende InGaN, InAlN, BGaN, and BAlN alloy layers [Internet]. Physica E. 2002 ; 13( 2-4): 1086-1089.[citado 2022 jul. 03 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=6159&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=17f1fea449f699588a0075ae9a65600c
Artigo de periodico
Phase separation suppression in InGaN epitaxial layers due to biaxial strain (2002)
Tabata, A; Teles, L. K.; Scolfaro, Luisa Maria Ribeiro; Leite, J. R.; Kharchenko, A; Frey, T; As, D J; Schikora, D; Lischka, K; Furthmüller, J; Bechstedt, F
Source: Applied Physics Letters. Unidade: IF
Subjects: SEMICONDUTORES, ESPECTROSCOPIA RAMAN
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ABNT
TABATA, A et al. Phase separation suppression in InGaN epitaxial layers due to biaxial strain. Applied Physics Letters, v. 80, n. 5, p. 769-771, 2002Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000080000005000769000001&idtype=cvips. Acesso em: 03 jul. 2022.
APA
Tabata, A., Teles, L. K., Scolfaro, L. M. R., Leite, J. R., Kharchenko, A., Frey, T., et al. (2002). Phase separation suppression in InGaN epitaxial layers due to biaxial strain. Applied Physics Letters, 80( 5), 769-771. doi:10.1063/1.1436270
NLM
Tabata A, Teles LK, Scolfaro LMR, Leite JR, Kharchenko A, Frey T, As DJ, Schikora D, Lischka K, Furthmüller J, Bechstedt F. Phase separation suppression in InGaN epitaxial layers due to biaxial strain [Internet]. Applied Physics Letters. 2002 ; 80( 5): 769-771.[citado 2022 jul. 03 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000080000005000769000001&idtype=cvips
Vancouver
Tabata A, Teles LK, Scolfaro LMR, Leite JR, Kharchenko A, Frey T, As DJ, Schikora D, Lischka K, Furthmüller J, Bechstedt F. Phase separation suppression in InGaN epitaxial layers due to biaxial strain [Internet]. Applied Physics Letters. 2002 ; 80( 5): 769-771.[citado 2022 jul. 03 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000080000005000769000001&idtype=cvips
Artigo de periodico
Photoluminescence from quantum dots in cubic GaN/InGaN/GaN double heterostructure (2001)
Husberg, O; Khartchenko, A; As, D J; Vogelsang, H; Frey, T; Schikora, D; Noriega, O C; Tabata, A; Leite, J. R.
Source: Applied Physics Letters. Unidade: IF
Subject: FOTOLUMINESCÊNCIA
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ABNT
HUSBERG, O et al. Photoluminescence from quantum dots in cubic GaN/InGaN/GaN double heterostructure. Applied Physics Letters, v. 79, n. 9, p. 1243-1245, 2001Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000079000009001243000001&idtype=cvips. Acesso em: 03 jul. 2022.
APA
Husberg, O., Khartchenko, A., As, D. J., Vogelsang, H., Frey, T., Schikora, D., et al. (2001). Photoluminescence from quantum dots in cubic GaN/InGaN/GaN double heterostructure. Applied Physics Letters, 79( 9), 1243-1245. doi:10.1063/1.1396314
NLM
Husberg O, Khartchenko A, As DJ, Vogelsang H, Frey T, Schikora D, Noriega OC, Tabata A, Leite JR. Photoluminescence from quantum dots in cubic GaN/InGaN/GaN double heterostructure [Internet]. Applied Physics Letters. 2001 ; 79( 9): 1243-1245.[citado 2022 jul. 03 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000079000009001243000001&idtype=cvips
Vancouver
Husberg O, Khartchenko A, As DJ, Vogelsang H, Frey T, Schikora D, Noriega OC, Tabata A, Leite JR. Photoluminescence from quantum dots in cubic GaN/InGaN/GaN double heterostructure [Internet]. Applied Physics Letters. 2001 ; 79( 9): 1243-1245.[citado 2022 jul. 03 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000079000009001243000001&idtype=cvips
Trabalho de evento-resumo
UBIC GaN:Si layers investigated by Raman scattering spectroscopy (2001)
Fernandez, José Rafael León; Silva, M. T. O.; Pusep, Yuri A; Chitta, Valmir Antonio; Tabata, A; Noriega, O C; Leite, J. R.; Abramof, E; As, D. J.; Schikora, D; Lischka, K
Source: Resumos. Conference title: Encontro Nacional de Física da Matéria Condensada. Unidade: IFSC
Subject: MATÉRIA CONDENSADA
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ABNT
FERNANDEZ, José Rafael León et al. UBIC GaN:Si layers investigated by Raman scattering spectroscopy. 2001, Anais.. São Paulo: SBF, 2001. . Acesso em: 03 jul. 2022.
APA
Fernandez, J. R. L., Silva, M. T. O., Pusep, Y. A., Chitta, V. A., Tabata, A., Noriega, O. C., et al. (2001). UBIC GaN:Si layers investigated by Raman scattering spectroscopy. In Resumos. São Paulo: SBF.
NLM
Fernandez JRL, Silva MTO, Pusep YA, Chitta VA, Tabata A, Noriega OC, Leite JR, Abramof E, As DJ, Schikora D, Lischka K. UBIC GaN:Si layers investigated by Raman scattering spectroscopy. Resumos. 2001 ;[citado 2022 jul. 03 ]
Vancouver
Fernandez JRL, Silva MTO, Pusep YA, Chitta VA, Tabata A, Noriega OC, Leite JR, Abramof E, As DJ, Schikora D, Lischka K. UBIC GaN:Si layers investigated by Raman scattering spectroscopy. Resumos. 2001 ;[citado 2022 jul. 03 ]
Artigo de periodico
Electrical resistivity and band-gap shift of Si-doped GaN and metal-nometal transition in cubic GaN, InN and AlN systems (2001)
Fernandez, J R L; Araujo, C Moyses; Silva, A Ferreira da; Leite, J. R.; Sernelius, Bo E; Tabata, A; Abramog, E; Chitta, V A; Persson, C; Ahuja, R; Pepe, I; As, D J; Frey, T; Schikora, D; Lischka, K
Source: Journal of Crystal Growth. Unidade: IF
Subjects: MATERIAIS (ANÁLISE;TESTES), RESISTÊNCIA DOS MATERIAIS, DIELÉTRICOS, RESISTÊNCIA ELÉTRICA
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ABNT
FERNANDEZ, J R L et al. Electrical resistivity and band-gap shift of Si-doped GaN and metal-nometal transition in cubic GaN, InN and AlN systems. Journal of Crystal Growth, v. 231, n. 3, p. 420-427, 2001Tradução . . Disponível em: http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=00220248&issue=v231i0003&article=420_erabsocgiaas&form=pdf&file=file.pdf. Acesso em: 03 jul. 2022.
APA
Fernandez, J. R. L., Araujo, C. M., Silva, A. F. da, Leite, J. R., Sernelius, B. E., Tabata, A., et al. (2001). Electrical resistivity and band-gap shift of Si-doped GaN and metal-nometal transition in cubic GaN, InN and AlN systems. Journal of Crystal Growth, 231( 3), 420-427. doi:10.1016/s0022-0248(01)01473-7
NLM
Fernandez JRL, Araujo CM, Silva AF da, Leite JR, Sernelius BE, Tabata A, Abramog E, Chitta VA, Persson C, Ahuja R, Pepe I, As DJ, Frey T, Schikora D, Lischka K. Electrical resistivity and band-gap shift of Si-doped GaN and metal-nometal transition in cubic GaN, InN and AlN systems [Internet]. Journal of Crystal Growth. 2001 ; 231( 3): 420-427.[citado 2022 jul. 03 ] Available from: http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=00220248&issue=v231i0003&article=420_erabsocgiaas&form=pdf&file=file.pdf
Vancouver
Fernandez JRL, Araujo CM, Silva AF da, Leite JR, Sernelius BE, Tabata A, Abramog E, Chitta VA, Persson C, Ahuja R, Pepe I, As DJ, Frey T, Schikora D, Lischka K. Electrical resistivity and band-gap shift of Si-doped GaN and metal-nometal transition in cubic GaN, InN and AlN systems [Internet]. Journal of Crystal Growth. 2001 ; 231( 3): 420-427.[citado 2022 jul. 03 ] Available from: http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=00220248&issue=v231i0003&article=420_erabsocgiaas&form=pdf&file=file.pdf
Artigo de periodico
MBE growth of cubic 'Al IND.Y' 'Ga IND.1-Y'N/GaN heterostructures, vibrational and optical properties (2001)
As, D J; Frey, T; Barttls, M; Lischka, K; Goldhahn, R; Shokhovets, S; Tabata, A; Fernandez, J R L; Leite, J. R.
Source: Journal of Crstal Growth. Unidade: IF
Subjects: DIFRAÇÃO POR RAIOS X, MAGNETISMO, SEMICONDUTORES, MATÉRIA CONDENSADA, ÓPTICA (PROPRIEDADES)
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
AS, D J et al. MBE growth of cubic 'Al IND.Y' 'Ga IND.1-Y'N/GaN heterostructures, vibrational and optical properties. Journal of Crstal Growth, v. 230, n. 3-4, p. 421-425, 2001Tradução . . Disponível em: http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=00220248&issue=v230i3-4&article=421_mgocahvaop&form=pdf&file=file.pdf. Acesso em: 03 jul. 2022.
APA
As, D. J., Frey, T., Barttls, M., Lischka, K., Goldhahn, R., Shokhovets, S., et al. (2001). MBE growth of cubic 'Al IND.Y' 'Ga IND.1-Y'N/GaN heterostructures, vibrational and optical properties. Journal of Crstal Growth, 230( 3-4), 421-425. Recuperado de http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=00220248&issue=v230i3-4&article=421_mgocahvaop&form=pdf&file=file.pdf
NLM
As DJ, Frey T, Barttls M, Lischka K, Goldhahn R, Shokhovets S, Tabata A, Fernandez JRL, Leite JR. MBE growth of cubic 'Al IND.Y' 'Ga IND.1-Y'N/GaN heterostructures, vibrational and optical properties [Internet]. Journal of Crstal Growth. 2001 ; 230( 3-4): 421-425.[citado 2022 jul. 03 ] Available from: http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=00220248&issue=v230i3-4&article=421_mgocahvaop&form=pdf&file=file.pdf
Vancouver
As DJ, Frey T, Barttls M, Lischka K, Goldhahn R, Shokhovets S, Tabata A, Fernandez JRL, Leite JR. MBE growth of cubic 'Al IND.Y' 'Ga IND.1-Y'N/GaN heterostructures, vibrational and optical properties [Internet]. Journal of Crstal Growth. 2001 ; 230( 3-4): 421-425.[citado 2022 jul. 03 ] Available from: http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=00220248&issue=v230i3-4&article=421_mgocahvaop&form=pdf&file=file.pdf
Artigo de periodico
Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces (2001)
Martini, S.; Quivy, A. A.; Tabata, A; Leite, J. R.
Source: Journal of Applied Physics. Unidade: IF
Subjects: MATÉRIA CONDENSADA, MICROSCOPIA ELETRÔNICA, ESTRUTURA ELETRÔNICA, FOTOLUMINESCÊNCIA, SUPERFÍCIE FÍSICA, TERMODINÂMICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MARTINI, S. et al. Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces. Journal of Applied Physics, v. 90, n. 5, p. 2280-2289, 2001Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000090000005002273000001&idtype=cvips. Acesso em: 03 jul. 2022.
APA
Martini, S., Quivy, A. A., Tabata, A., & Leite, J. R. (2001). Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces. Journal of Applied Physics, 90( 5), 2280-2289. doi:10.1063/1.1389336
NLM
Martini S, Quivy AA, Tabata A, Leite JR. Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces [Internet]. Journal of Applied Physics. 2001 ; 90( 5): 2280-2289.[citado 2022 jul. 03 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000090000005002273000001&idtype=cvips
Vancouver
Martini S, Quivy AA, Tabata A, Leite JR. Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces [Internet]. Journal of Applied Physics. 2001 ; 90( 5): 2280-2289.[citado 2022 jul. 03 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000090000005002273000001&idtype=cvips
Artigo de periodico
Structural and vibrational properties of molecular beam epitaxy grown cubic (Al, Ga)N/GaN heterostructures (2001)
Frey, T; As, D J; Bartels, M; Pawlis, A; Tabata, A; Fernandez, J R L; Silva, M T O; Leite, J. R.; Haug, C; Brenn, R
Source: Journal of Applied Physics. Unidade: IF
Subjects: DIFRAÇÃO POR RAIOS X, ESPECTROSCOPIA MOLECULAR
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
FREY, T et al. Structural and vibrational properties of molecular beam epitaxy grown cubic (Al, Ga)N/GaN heterostructures. Journal of Applied Physics, v. 89, n. 5, p. 2631-2634, 2001Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000089000005002631000001&idtype=cvips. Acesso em: 03 jul. 2022.
APA
Frey, T., As, D. J., Bartels, M., Pawlis, A., Tabata, A., Fernandez, J. R. L., et al. (2001). Structural and vibrational properties of molecular beam epitaxy grown cubic (Al, Ga)N/GaN heterostructures. Journal of Applied Physics, 89( 5), 2631-2634. doi:10.1063/1.1345858
NLM
Frey T, As DJ, Bartels M, Pawlis A, Tabata A, Fernandez JRL, Silva MTO, Leite JR, Haug C, Brenn R. Structural and vibrational properties of molecular beam epitaxy grown cubic (Al, Ga)N/GaN heterostructures [Internet]. Journal of Applied Physics. 2001 ; 89( 5): 2631-2634.[citado 2022 jul. 03 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000089000005002631000001&idtype=cvips
Vancouver
Frey T, As DJ, Bartels M, Pawlis A, Tabata A, Fernandez JRL, Silva MTO, Leite JR, Haug C, Brenn R. Structural and vibrational properties of molecular beam epitaxy grown cubic (Al, Ga)N/GaN heterostructures [Internet]. Journal of Applied Physics. 2001 ; 89( 5): 2631-2634.[citado 2022 jul. 03 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000089000005002631000001&idtype=cvips
Trabalho de evento-anais periodico
Resonant raman scattering and the emission process in zincblende-'In IND.X''Ga IND.1-X'N (2000)
Lemos, V; Silveira, E; Leite, J. R.; Tabata, A; Trentin, R.; Frey, T; As, D J; Schikora, D; Lischka, K
Source: Materials Science Forum. Conference title: Proceedings of the International Conference on Silicon Carbide and Related Materials. Unidade: IF
Subject: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
LEMOS, V et al. Resonant raman scattering and the emission process in zincblende-'In IND.X''Ga IND.1-X'N. Materials Science Forum. Zuerich: Trans Tech Publications. . Acesso em: 03 jul. 2022. , 2000
APA
Lemos, V., Silveira, E., Leite, J. R., Tabata, A., Trentin, R., Frey, T., et al. (2000). Resonant raman scattering and the emission process in zincblende-'In IND.X''Ga IND.1-X'N. Materials Science Forum. Zuerich: Trans Tech Publications.
NLM
Lemos V, Silveira E, Leite JR, Tabata A, Trentin R, Frey T, As DJ, Schikora D, Lischka K. Resonant raman scattering and the emission process in zincblende-'In IND.X''Ga IND.1-X'N. Materials Science Forum. 2000 ; 338-342 1595-1598.[citado 2022 jul. 03 ]
Vancouver
Lemos V, Silveira E, Leite JR, Tabata A, Trentin R, Frey T, As DJ, Schikora D, Lischka K. Resonant raman scattering and the emission process in zincblende-'In IND.X''Ga IND.1-X'N. Materials Science Forum. 2000 ; 338-342 1595-1598.[citado 2022 jul. 03 ]
Artigo de periodico
Reduction of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on vicinal GaAs(001) substrates (2000)
Martini, S.; Quivy, A. A.; Tabata, A; Leite, J. R.
Source: Journal of Vacuum Science & Technology B. Unidade: IF
Subjects: FÍSICA, INTERFACE
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MARTINI, S. et al. Reduction of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on vicinal GaAs(001) substrates. Journal of Vacuum Science & Technology B, v. 18, n. 4, p. 1991-1996, 2000Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JVTBD9000018000004001991000001&idtype=cvips. Acesso em: 03 jul. 2022.
APA
Martini, S., Quivy, A. A., Tabata, A., & Leite, J. R. (2000). Reduction of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on vicinal GaAs(001) substrates. Journal of Vacuum Science & Technology B, 18( 4), 1991-1996. doi:10.1116/1.1303851
NLM
Martini S, Quivy AA, Tabata A, Leite JR. Reduction of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on vicinal GaAs(001) substrates [Internet]. Journal of Vacuum Science & Technology B. 2000 ; 18( 4): 1991-1996.[citado 2022 jul. 03 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JVTBD9000018000004001991000001&idtype=cvips
Vancouver
Martini S, Quivy AA, Tabata A, Leite JR. Reduction of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on vicinal GaAs(001) substrates [Internet]. Journal of Vacuum Science & Technology B. 2000 ; 18( 4): 1991-1996.[citado 2022 jul. 03 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JVTBD9000018000004001991000001&idtype=cvips
Trabalho de evento
Overdamped electron plasma oscillations in cubic 'Al IND.X' 'Ga IND.1-X'N layers observed by raman scattering spectrocopy (2000)
Fernandez, J R L; Tabata, A; Chitta, V A; As, D J; Frey, T; Noriega, O C; Silva, M T O; Abramof, E; Schikora, D; Lischka, K; Leite, J. R.
Source: Proceedings. Conference title: International Workshop on Nitride Semiconductors. Unidade: IF
Subjects: MATÉRIA CONDENSADA, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
FERNANDEZ, J R L et al. Overdamped electron plasma oscillations in cubic 'Al IND.X' 'Ga IND.1-X'N layers observed by raman scattering spectrocopy. 2000, Anais.. Tokyo: The Institute of Pure and Applied Physics-IPAP, 2000. . Acesso em: 03 jul. 2022.
APA
Fernandez, J. R. L., Tabata, A., Chitta, V. A., As, D. J., Frey, T., Noriega, O. C., et al. (2000). Overdamped electron plasma oscillations in cubic 'Al IND.X' 'Ga IND.1-X'N layers observed by raman scattering spectrocopy. In Proceedings. Tokyo: The Institute of Pure and Applied Physics-IPAP.
NLM
Fernandez JRL, Tabata A, Chitta VA, As DJ, Frey T, Noriega OC, Silva MTO, Abramof E, Schikora D, Lischka K, Leite JR. Overdamped electron plasma oscillations in cubic 'Al IND.X' 'Ga IND.1-X'N layers observed by raman scattering spectrocopy. Proceedings. 2000 ;[citado 2022 jul. 03 ]
Vancouver
Fernandez JRL, Tabata A, Chitta VA, As DJ, Frey T, Noriega OC, Silva MTO, Abramof E, Schikora D, Lischka K, Leite JR. Overdamped electron plasma oscillations in cubic 'Al IND.X' 'Ga IND.1-X'N layers observed by raman scattering spectrocopy. Proceedings. 2000 ;[citado 2022 jul. 03 ]

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