Filters : "Tabata, A" Limpar

Filters



Refine with date range


  • In: Physics Procedia: Book Series. Conference title: Brazilian Workshop on Semiconductor Physics. Unidade: IF

    Subjects: POÇOS QUÂNTICOS, SEMICONDUTORES, FOTOLUMINESCÊNCIA

    How to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      TABATA, A; OLIVEIRA, J B B; PINTÃO, C A F; et al. Indirect optical transitions from carriers trapped on the delta doping and on the parabolic quantum well. Physics Procedia: Book Series[S.l: s.n.], 2012.
    • APA

      Tabata, A., Oliveira, J. B. B., Pintão, C. A. F., Silva, E. C. F. da, Lamas, T. E., Duarte, C. A., & Gusev, G. M. (2012). Indirect optical transitions from carriers trapped on the delta doping and on the parabolic quantum well. Physics Procedia: Book Series. Amsterdam.
    • NLM

      Tabata A, Oliveira JBB, Pintão CAF, Silva ECF da, Lamas TE, Duarte CA, Gusev GM. Indirect optical transitions from carriers trapped on the delta doping and on the parabolic quantum well. Physics Procedia: Book Series. 2012 ;28 53-56.
    • Vancouver

      Tabata A, Oliveira JBB, Pintão CAF, Silva ECF da, Lamas TE, Duarte CA, Gusev GM. Indirect optical transitions from carriers trapped on the delta doping and on the parabolic quantum well. Physics Procedia: Book Series. 2012 ;28 53-56.
  • In: Resumo. Conference title: Econtro de Física. Unidade: IF

    Subjects: SEMICONDUTORES (FÍSICO-QUÍMICA)

    How to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      CAVALCANTE, J S; SILVA, E C F da; BASSETTO JR, C A Z; OLIVEIRA, J B B de; TABATA, A. Growth temperature dependent on the optical properties of 'GA''IN''AS'N/'GA''AS' single quantum well. Anais.. Foz do Iguaçu: SBF, 2011.
    • APA

      Cavalcante, J. S., Silva, E. C. F. da, Bassetto Jr, C. A. Z., Oliveira, J. B. B. de, & Tabata, A. (2011). Growth temperature dependent on the optical properties of 'GA''IN''AS'N/'GA''AS' single quantum well. In Resumo. Foz do Iguaçu: SBF.
    • NLM

      Cavalcante JS, Silva ECF da, Bassetto Jr CAZ, Oliveira JBB de, Tabata A. Growth temperature dependent on the optical properties of 'GA''IN''AS'N/'GA''AS' single quantum well. Resumo. 2011 ;
    • Vancouver

      Cavalcante JS, Silva ECF da, Bassetto Jr CAZ, Oliveira JBB de, Tabata A. Growth temperature dependent on the optical properties of 'GA''IN''AS'N/'GA''AS' single quantum well. Resumo. 2011 ;
  • In: Resumo. Conference title: Brazilian Workshop on Semiconductor Physics. Unidade: IF

    Subjects: SEMICONDUTORES

    How to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      TABATA, A; BASSETO JR, C A Z; CAVALCANTE, J S; et al. Indirect optical transitions from carriers trapped on the delta doping and on the parabolic quantum well. Anais.. Juiz de Fora: UFJF, 2011.
    • APA

      Tabata, A., Basseto Jr, C. A. Z., Cavalcante, J. S., Oliveira, J. B. B., Silva, E. C. F. da, Gusev, G. M., & Lamas, T. E. (2011). Indirect optical transitions from carriers trapped on the delta doping and on the parabolic quantum well. In Resumo. Juiz de Fora: UFJF.
    • NLM

      Tabata A, Basseto Jr CAZ, Cavalcante JS, Oliveira JBB, Silva ECF da, Gusev GM, Lamas TE. Indirect optical transitions from carriers trapped on the delta doping and on the parabolic quantum well. Resumo. 2011 ;
    • Vancouver

      Tabata A, Basseto Jr CAZ, Cavalcante JS, Oliveira JBB, Silva ECF da, Gusev GM, Lamas TE. Indirect optical transitions from carriers trapped on the delta doping and on the parabolic quantum well. Resumo. 2011 ;
  • In: Resumo. Conference title: Econtro de Física. Unidade: IF

    Subjects: SEMICONDUTORES (FÍSICO-QUÍMICA)

    How to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      BASSETTO JR, C A Z; CAVALCANTE, J S; OLIVEIRA, J B B de; TABATA, A; SILVA, E C F da. Studies of strain relaxation on diluted nitride 'IN''GA''AS'N/'GA'AS' single quantum well. Anais.. Foz do Iguaçu: SBF, 2011.
    • APA

      Bassetto Jr, C. A. Z., Cavalcante, J. S., Oliveira, J. B. B. de, Tabata, A., & Silva, E. C. F. da. (2011). Studies of strain relaxation on diluted nitride 'IN''GA''AS'N/'GA'AS' single quantum well. In Resumo. Foz do Iguaçu: SBF.
    • NLM

      Bassetto Jr CAZ, Cavalcante JS, Oliveira JBB de, Tabata A, Silva ECF da. Studies of strain relaxation on diluted nitride 'IN''GA''AS'N/'GA'AS' single quantum well. Resumo. 2011 ;
    • Vancouver

      Bassetto Jr CAZ, Cavalcante JS, Oliveira JBB de, Tabata A, Silva ECF da. Studies of strain relaxation on diluted nitride 'IN''GA''AS'N/'GA'AS' single quantum well. Resumo. 2011 ;
  • In: Journal Physics - Conference Series. Unidade: IF

    Subjects: SEMICONDUTORES

    DOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      TABATA, A; OLIVEIRA, J. B. B; SILVA, E C F; et al. Excitons in undoped AlGaAs/GaAs wide parabolic quantum wells. Journal Physics - Conference Series, New York, v. 210, n. 1, p. 012052-1 - 012052-4, 2010. DOI: 10.1088/1742-6596/210/1/012052.
    • APA

      Tabata, A., Oliveira, J. B. B., Silva, E. C. F., Lamas, T. E., Duarte, C. A., & Gusev, G. M. (2010). Excitons in undoped AlGaAs/GaAs wide parabolic quantum wells. Journal Physics - Conference Series, 210( 1), 012052-1 - 012052-4. doi:10.1088/1742-6596/210/1/012052
    • NLM

      Tabata A, Oliveira JBB, Silva ECF, Lamas TE, Duarte CA, Gusev GM. Excitons in undoped AlGaAs/GaAs wide parabolic quantum wells. Journal Physics - Conference Series. 2010 ; 210( 1): 012052-1 - 012052-4.
    • Vancouver

      Tabata A, Oliveira JBB, Silva ECF, Lamas TE, Duarte CA, Gusev GM. Excitons in undoped AlGaAs/GaAs wide parabolic quantum wells. Journal Physics - Conference Series. 2010 ; 210( 1): 012052-1 - 012052-4.
  • In: Journal of Applied Physics. Unidade: IF

    Subjects: POÇOS QUÂNTICOS, ESPALHAMENTO

    Online source accessDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      TABATA, A; MARTINS, M R; OLIVEIRA, J B B; et al. Many-body effects in wide parabolic AlGaAs quantum wells. Journal of Applied Physics, New York, The Institute, v. 102, n. 9, p. 093715/1-093715/5, 2007. Disponível em: < http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000102000009093715000001&idtype=cvips > DOI: 10.1063/1.2809418.
    • APA

      Tabata, A., Martins, M. R., Oliveira, J. B. B., Lamas, T. E., Duarte, C. A., Silva, E. C. F. da, & Gusev, G. M. (2007). Many-body effects in wide parabolic AlGaAs quantum wells. Journal of Applied Physics, 102( 9), 093715/1-093715/5. doi:10.1063/1.2809418
    • NLM

      Tabata A, Martins MR, Oliveira JBB, Lamas TE, Duarte CA, Silva ECF da, Gusev GM. Many-body effects in wide parabolic AlGaAs quantum wells [Internet]. Journal of Applied Physics. 2007 ; 102( 9): 093715/1-093715/5.Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000102000009093715000001&idtype=cvips
    • Vancouver

      Tabata A, Martins MR, Oliveira JBB, Lamas TE, Duarte CA, Silva ECF da, Gusev GM. Many-body effects in wide parabolic AlGaAs quantum wells [Internet]. Journal of Applied Physics. 2007 ; 102( 9): 093715/1-093715/5.Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000102000009093715000001&idtype=cvips
  • In: Book of Abstract. Conference title: Brazilian Workshop on Semiconductor Physics. Unidade: IF

    Subjects: ESTRUTURA ELETRÔNICA, FOTOLUMINESCÊNCIA

    How to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      FERNANDEZ, J R L; NORIEGA, O C; SOARES, J A N T; et al. Near band-edge optical properties of cubic GaN. Anais.. Fortaleza: DF/UFC, 2003.
    • APA

      Fernandez, J. R. L., Noriega, O. C., Soares, J. A. N. T., Tabata, A., Rodrigues, S. C. P., Cerdeira, F., et al. (2003). Near band-edge optical properties of cubic GaN. In Book of Abstract. Fortaleza: DF/UFC.
    • NLM

      Fernandez JRL, Noriega OC, Soares JANT, Tabata A, Rodrigues SCP, Cerdeira F, Meneses EA, Scolfaro LMR, Leite JR, As DJ, Lischka K. Near band-edge optical properties of cubic GaN. Book of Abstract. 2003 ;
    • Vancouver

      Fernandez JRL, Noriega OC, Soares JANT, Tabata A, Rodrigues SCP, Cerdeira F, Meneses EA, Scolfaro LMR, Leite JR, As DJ, Lischka K. Near band-edge optical properties of cubic GaN. Book of Abstract. 2003 ;
  • In: Journal of Crystal Growth. Unidade: IF

    Subjects: SEMICONDUTORES, ESTRUTURA ELETRÔNICA

    Online source accessDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      NORIEGA, O C; TABATA, A; SOARES, J A N T; et al. Photoreflectance studies of optical transitions in cubic GaN grown on GaAs(001) substrates. Journal of Crystal Growth, Amsterdam, Elsevier Science, v. 252, n. 1-3, p. 208-212, 2003. Disponível em: < http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5302&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=841273c738a47f3959822930346abf20 > DOI: 10.1016/s0022-0248(02)02517-4.
    • APA

      Noriega, O. C., Tabata, A., Soares, J. A. N. T., Rodrigues, S. C. P., Leite, J. R., Ribeiro, E., et al. (2003). Photoreflectance studies of optical transitions in cubic GaN grown on GaAs(001) substrates. Journal of Crystal Growth, 252( 1-3), 208-212. doi:10.1016/s0022-0248(02)02517-4
    • NLM

      Noriega OC, Tabata A, Soares JANT, Rodrigues SCP, Leite JR, Ribeiro E, Fernandez JRL, Meneses EA, Cerdeira F, As DJ, Schikora D, Lischka K. Photoreflectance studies of optical transitions in cubic GaN grown on GaAs(001) substrates [Internet]. Journal of Crystal Growth. 2003 ; 252( 1-3): 208-212.Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5302&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=841273c738a47f3959822930346abf20
    • Vancouver

      Noriega OC, Tabata A, Soares JANT, Rodrigues SCP, Leite JR, Ribeiro E, Fernandez JRL, Meneses EA, Cerdeira F, As DJ, Schikora D, Lischka K. Photoreflectance studies of optical transitions in cubic GaN grown on GaAs(001) substrates [Internet]. Journal of Crystal Growth. 2003 ; 252( 1-3): 208-212.Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5302&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=841273c738a47f3959822930346abf20
  • In: Programa e Livro de Resumos. Conference title: Encontro da Sociedade Brasileira de Pesquisa em Materiais. Unidade: IF

    Subjects: MATERIAIS, MATÉRIA CONDENSADA, ESTRUTURA ELETRÔNICA

    How to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      ORTIZ DE ZEVALLOS, Angela M; RIBEIRO, M; LEITE, J. R.; TABATA, A; FREITAS JUNIOR, J A. Influence of plasma etching and thermal annealing conditions on the electroluminescence of GaN pn junctions. Anais.. Rio de Janeiro: SBPMat, 2003.
    • APA

      Ortiz de Zevallos, A. M., Ribeiro, M., Leite, J. R., Tabata, A., & Freitas Junior, J. A. (2003). Influence of plasma etching and thermal annealing conditions on the electroluminescence of GaN pn junctions. In Programa e Livro de Resumos. Rio de Janeiro: SBPMat.
    • NLM

      Ortiz de Zevallos AM, Ribeiro M, Leite JR, Tabata A, Freitas Junior JA. Influence of plasma etching and thermal annealing conditions on the electroluminescence of GaN pn junctions. Programa e Livro de Resumos. 2003 ;
    • Vancouver

      Ortiz de Zevallos AM, Ribeiro M, Leite JR, Tabata A, Freitas Junior JA. Influence of plasma etching and thermal annealing conditions on the electroluminescence of GaN pn junctions. Programa e Livro de Resumos. 2003 ;
  • In: Applied Physics Letters. Unidade: IF

    Subjects: SEMICONDUTORES, ESPECTROSCOPIA RAMAN

    Online source accessDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      TABATA, A; TELES, L. K.; SCOLFARO, Luisa Maria Ribeiro; et al. Phase separation suppression in InGaN epitaxial layers due to biaxial strain. Applied Physics Letters, New York, AIP, v. 80, n. 5, p. 769-771, 2002. Disponível em: < http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000080000005000769000001&idtype=cvips > DOI: 10.1063/1.1436270.
    • APA

      Tabata, A., Teles, L. K., Scolfaro, L. M. R., Leite, J. R., Kharchenko, A., Frey, T., et al. (2002). Phase separation suppression in InGaN epitaxial layers due to biaxial strain. Applied Physics Letters, 80( 5), 769-771. doi:10.1063/1.1436270
    • NLM

      Tabata A, Teles LK, Scolfaro LMR, Leite JR, Kharchenko A, Frey T, As DJ, Schikora D, Lischka K, Furthmüller J, Bechstedt F. Phase separation suppression in InGaN epitaxial layers due to biaxial strain [Internet]. Applied Physics Letters. 2002 ; 80( 5): 769-771.Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000080000005000769000001&idtype=cvips
    • Vancouver

      Tabata A, Teles LK, Scolfaro LMR, Leite JR, Kharchenko A, Frey T, As DJ, Schikora D, Lischka K, Furthmüller J, Bechstedt F. Phase separation suppression in InGaN epitaxial layers due to biaxial strain [Internet]. Applied Physics Letters. 2002 ; 80( 5): 769-771.Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000080000005000769000001&idtype=cvips
  • In: Physica E. Unidade: IF

    Subjects: SEMICONDUTIVIDADE, TERMODINÂMICA, ESPECTROSCOPIA RAMAN, ESPECTROSCOPIA DE RAIO X

    Online source accessDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      TELES, L. K.; FURTHMÜLLER, J; SCOLFARO, Luisa Maria Ribeiro; et al. Phase separation and gap bowing in zinc-blende InGaN, InAlN, BGaN, and BAlN alloy layers. Physica E, Amsterdam, Elsevier Science, v. 13, n. 2-4, p. 1086-1089, 2002. Disponível em: < http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=6159&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=17f1fea449f699588a0075ae9a65600c > DOI: 10.1016/s1386-9477(02)00309-0.
    • APA

      Teles, L. K., Furthmüller, J., Scolfaro, L. M. R., Tabata, A., Leite, J. R., Bechstedt, F., et al. (2002). Phase separation and gap bowing in zinc-blende InGaN, InAlN, BGaN, and BAlN alloy layers. Physica E, 13( 2-4), 1086-1089. doi:10.1016/s1386-9477(02)00309-0
    • NLM

      Teles LK, Furthmüller J, Scolfaro LMR, Tabata A, Leite JR, Bechstedt F, Frey T, As DJ, Lischka K. Phase separation and gap bowing in zinc-blende InGaN, InAlN, BGaN, and BAlN alloy layers [Internet]. Physica E. 2002 ; 13( 2-4): 1086-1089.Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=6159&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=17f1fea449f699588a0075ae9a65600c
    • Vancouver

      Teles LK, Furthmüller J, Scolfaro LMR, Tabata A, Leite JR, Bechstedt F, Frey T, As DJ, Lischka K. Phase separation and gap bowing in zinc-blende InGaN, InAlN, BGaN, and BAlN alloy layers [Internet]. Physica E. 2002 ; 13( 2-4): 1086-1089.Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=6159&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=17f1fea449f699588a0075ae9a65600c
  • In: Applied Physics Letters. Unidade: IF

    Subjects: FOTOLUMINESCÊNCIA

    Online source accessDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      HUSBERG, O; KHARTCHENKO, A; AS, D J; et al. Photoluminescence from quantum dots in cubic GaN/InGaN/GaN double heterostructure. Applied Physics Letters, Woodbury, The Institute, v. 79, n. 9, p. 1243-1245, 2001. Disponível em: < http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000079000009001243000001&idtype=cvips > DOI: 10.1063/1.1396314.
    • APA

      Husberg, O., Khartchenko, A., As, D. J., Vogelsang, H., Frey, T., Schikora, D., et al. (2001). Photoluminescence from quantum dots in cubic GaN/InGaN/GaN double heterostructure. Applied Physics Letters, 79( 9), 1243-1245. doi:10.1063/1.1396314
    • NLM

      Husberg O, Khartchenko A, As DJ, Vogelsang H, Frey T, Schikora D, Noriega OC, Tabata A, Leite JR. Photoluminescence from quantum dots in cubic GaN/InGaN/GaN double heterostructure [Internet]. Applied Physics Letters. 2001 ; 79( 9): 1243-1245.Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000079000009001243000001&idtype=cvips
    • Vancouver

      Husberg O, Khartchenko A, As DJ, Vogelsang H, Frey T, Schikora D, Noriega OC, Tabata A, Leite JR. Photoluminescence from quantum dots in cubic GaN/InGaN/GaN double heterostructure [Internet]. Applied Physics Letters. 2001 ; 79( 9): 1243-1245.Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000079000009001243000001&idtype=cvips
  • In: Resumos. Conference title: Encontro Nacional de Física da Matéria Condensada. Unidade: IFSC

    Subjects: MATÉRIA CONDENSADA

    How to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      FERNANDEZ, José Rafael León; SILVA, M. T. O.; PUSEP, Yuri A; et al. UBIC GaN:Si layers investigated by Raman scattering spectroscopy. Anais.. São Paulo: SBF, 2001.
    • APA

      Fernandez, J. R. L., Silva, M. T. O., Pusep, Y. A., Chitta, V. A., Tabata, A., Noriega, O. C., et al. (2001). UBIC GaN:Si layers investigated by Raman scattering spectroscopy. In Resumos. São Paulo: SBF.
    • NLM

      Fernandez JRL, Silva MTO, Pusep YA, Chitta VA, Tabata A, Noriega OC, Leite JR, Abramof E, As DJ, Schikora D, Lischka K. UBIC GaN:Si layers investigated by Raman scattering spectroscopy. Resumos. 2001 ;
    • Vancouver

      Fernandez JRL, Silva MTO, Pusep YA, Chitta VA, Tabata A, Noriega OC, Leite JR, Abramof E, As DJ, Schikora D, Lischka K. UBIC GaN:Si layers investigated by Raman scattering spectroscopy. Resumos. 2001 ;
  • In: Journal of Applied Physics. Unidade: IF

    Subjects: MATÉRIA CONDENSADA, MICROSCOPIA ELETRÔNICA, ESTRUTURA ELETRÔNICA, FOTOLUMINESCÊNCIA, SUPERFÍCIE FÍSICA, TERMODINÂMICA

    Online source accessDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      MARTINI, S.; QUIVY, A. A.; TABATA, A; LEITE, J. R. Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces. Journal of Applied Physics, Woodbury, The Institute, v. 90, n. 5, p. 2280-2289, 2001. Disponível em: < http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000090000005002273000001&idtype=cvips > DOI: 10.1063/1.1389336.
    • APA

      Martini, S., Quivy, A. A., Tabata, A., & Leite, J. R. (2001). Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces. Journal of Applied Physics, 90( 5), 2280-2289. doi:10.1063/1.1389336
    • NLM

      Martini S, Quivy AA, Tabata A, Leite JR. Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces [Internet]. Journal of Applied Physics. 2001 ; 90( 5): 2280-2289.Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000090000005002273000001&idtype=cvips
    • Vancouver

      Martini S, Quivy AA, Tabata A, Leite JR. Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces [Internet]. Journal of Applied Physics. 2001 ; 90( 5): 2280-2289.Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000090000005002273000001&idtype=cvips
  • In: Journal of Crystal Growth. Unidade: IF

    Subjects: DIELÉTRICOS, RESISTÊNCIA ELÉTRICA, MATERIAIS (ANÁLISE;TESTES), RESISTÊNCIA DOS MATERIAIS

    Online source accessDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      FERNANDEZ, J R L; ARAUJO, C Moyses; SILVA, A Ferreira da; et al. Electrical resistivity and band-gap shift of Si-doped GaN and metal-nometal transition in cubic GaN, InN and AlN systems. Journal of Crystal Growth, Amsterdam, Elsevier Science, v. 231, n. 3, p. 420-427, 2001. Disponível em: < http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=00220248&issue=v231i0003&article=420_erabsocgiaas&form=pdf&file=file.pdf > DOI: 10.1016/s0022-0248(01)01473-7.
    • APA

      Fernandez, J. R. L., Araujo, C. M., Silva, A. F. da, Leite, J. R., Sernelius, B. E., Tabata, A., et al. (2001). Electrical resistivity and band-gap shift of Si-doped GaN and metal-nometal transition in cubic GaN, InN and AlN systems. Journal of Crystal Growth, 231( 3), 420-427. doi:10.1016/s0022-0248(01)01473-7
    • NLM

      Fernandez JRL, Araujo CM, Silva AF da, Leite JR, Sernelius BE, Tabata A, Abramog E, Chitta VA, Persson C, Ahuja R, Pepe I, As DJ, Frey T, Schikora D, Lischka K. Electrical resistivity and band-gap shift of Si-doped GaN and metal-nometal transition in cubic GaN, InN and AlN systems [Internet]. Journal of Crystal Growth. 2001 ; 231( 3): 420-427.Available from: http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=00220248&issue=v231i0003&article=420_erabsocgiaas&form=pdf&file=file.pdf
    • Vancouver

      Fernandez JRL, Araujo CM, Silva AF da, Leite JR, Sernelius BE, Tabata A, Abramog E, Chitta VA, Persson C, Ahuja R, Pepe I, As DJ, Frey T, Schikora D, Lischka K. Electrical resistivity and band-gap shift of Si-doped GaN and metal-nometal transition in cubic GaN, InN and AlN systems [Internet]. Journal of Crystal Growth. 2001 ; 231( 3): 420-427.Available from: http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=00220248&issue=v231i0003&article=420_erabsocgiaas&form=pdf&file=file.pdf
  • In: Journal of Crstal Growth. Unidade: IF

    Subjects: DIFRAÇÃO POR RAIOS X, MAGNETISMO, SEMICONDUTORES, MATÉRIA CONDENSADA, ÓPTICA (PROPRIEDADES)

    Online source accessHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      AS, D J; FREY, T; BARTTLS, M; et al. MBE growth of cubic 'Al IND.Y' 'Ga IND.1-Y'N/GaN heterostructures, vibrational and optical properties. Journal of Crstal Growth, Amsterdam, Elsevier Science, v. 230, n. 3-4, p. 421-425, 2001. Disponível em: < http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=00220248&issue=v230i3-4&article=421_mgocahvaop&form=pdf&file=file.pdf >.
    • APA

      As, D. J., Frey, T., Barttls, M., Lischka, K., Goldhahn, R., Shokhovets, S., et al. (2001). MBE growth of cubic 'Al IND.Y' 'Ga IND.1-Y'N/GaN heterostructures, vibrational and optical properties. Journal of Crstal Growth, 230( 3-4), 421-425. Recuperado de http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=00220248&issue=v230i3-4&article=421_mgocahvaop&form=pdf&file=file.pdf
    • NLM

      As DJ, Frey T, Barttls M, Lischka K, Goldhahn R, Shokhovets S, Tabata A, Fernandez JRL, Leite JR. MBE growth of cubic 'Al IND.Y' 'Ga IND.1-Y'N/GaN heterostructures, vibrational and optical properties [Internet]. Journal of Crstal Growth. 2001 ; 230( 3-4): 421-425.Available from: http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=00220248&issue=v230i3-4&article=421_mgocahvaop&form=pdf&file=file.pdf
    • Vancouver

      As DJ, Frey T, Barttls M, Lischka K, Goldhahn R, Shokhovets S, Tabata A, Fernandez JRL, Leite JR. MBE growth of cubic 'Al IND.Y' 'Ga IND.1-Y'N/GaN heterostructures, vibrational and optical properties [Internet]. Journal of Crstal Growth. 2001 ; 230( 3-4): 421-425.Available from: http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=00220248&issue=v230i3-4&article=421_mgocahvaop&form=pdf&file=file.pdf
  • In: Journal of Applied Physics. Unidade: IF

    Subjects: DIFRAÇÃO POR RAIOS X, ESPECTROSCOPIA MOLECULAR

    Online source accessDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      FREY, T; AS, D J; BARTELS, M; et al. Structural and vibrational properties of molecular beam epitaxy grown cubic (Al, Ga)N/GaN heterostructures. Journal of Applied Physics, Woodbury, The Institute, v. 89, n. 5, p. 2631-2634, 2001. Disponível em: < http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000089000005002631000001&idtype=cvips > DOI: 10.1063/1.1345858.
    • APA

      Frey, T., As, D. J., Bartels, M., Pawlis, A., Tabata, A., Fernandez, J. R. L., et al. (2001). Structural and vibrational properties of molecular beam epitaxy grown cubic (Al, Ga)N/GaN heterostructures. Journal of Applied Physics, 89( 5), 2631-2634. doi:10.1063/1.1345858
    • NLM

      Frey T, As DJ, Bartels M, Pawlis A, Tabata A, Fernandez JRL, Silva MTO, Leite JR, Haug C, Brenn R. Structural and vibrational properties of molecular beam epitaxy grown cubic (Al, Ga)N/GaN heterostructures [Internet]. Journal of Applied Physics. 2001 ; 89( 5): 2631-2634.Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000089000005002631000001&idtype=cvips
    • Vancouver

      Frey T, As DJ, Bartels M, Pawlis A, Tabata A, Fernandez JRL, Silva MTO, Leite JR, Haug C, Brenn R. Structural and vibrational properties of molecular beam epitaxy grown cubic (Al, Ga)N/GaN heterostructures [Internet]. Journal of Applied Physics. 2001 ; 89( 5): 2631-2634.Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000089000005002631000001&idtype=cvips
  • In: Materials Science Forum. Conference title: Proceedings of the International Conference on Silicon Carbide and Related Materials. Unidade: IF

    Subjects: MATÉRIA CONDENSADA

    How to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      LEMOS, V; SILVEIRA, E; LEITE, J. R.; et al. Resonant raman scattering and the emission process in zincblende-'In IND.X''Ga IND.1-X'N. Materials Science Forum[S.l: s.n.], 2000.
    • APA

      Lemos, V., Silveira, E., Leite, J. R., Tabata, A., Trentin, R., Frey, T., et al. (2000). Resonant raman scattering and the emission process in zincblende-'In IND.X''Ga IND.1-X'N. Materials Science Forum. Zuerich: Trans Tech Publications.
    • NLM

      Lemos V, Silveira E, Leite JR, Tabata A, Trentin R, Frey T, As DJ, Schikora D, Lischka K. Resonant raman scattering and the emission process in zincblende-'In IND.X''Ga IND.1-X'N. Materials Science Forum. 2000 ; 338-342 1595-1598.
    • Vancouver

      Lemos V, Silveira E, Leite JR, Tabata A, Trentin R, Frey T, As DJ, Schikora D, Lischka K. Resonant raman scattering and the emission process in zincblende-'In IND.X''Ga IND.1-X'N. Materials Science Forum. 2000 ; 338-342 1595-1598.
  • In: Journal of Vacuum Science & Technology B. Unidade: IF

    Subjects: FÍSICA, INTERFACE

    Online source accessDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      MARTINI, S.; QUIVY, A. A.; TABATA, A; LEITE, J. R. Reduction of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on vicinal GaAs(001) substrates. Journal of Vacuum Science & Technology B, New York, American Vacuum Society, v. 18, n. 4, p. 1991-1996, 2000. Disponível em: < http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JVTBD9000018000004001991000001&idtype=cvips > DOI: 10.1116/1.1303851.
    • APA

      Martini, S., Quivy, A. A., Tabata, A., & Leite, J. R. (2000). Reduction of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on vicinal GaAs(001) substrates. Journal of Vacuum Science & Technology B, 18( 4), 1991-1996. doi:10.1116/1.1303851
    • NLM

      Martini S, Quivy AA, Tabata A, Leite JR. Reduction of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on vicinal GaAs(001) substrates [Internet]. Journal of Vacuum Science & Technology B. 2000 ; 18( 4): 1991-1996.Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JVTBD9000018000004001991000001&idtype=cvips
    • Vancouver

      Martini S, Quivy AA, Tabata A, Leite JR. Reduction of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on vicinal GaAs(001) substrates [Internet]. Journal of Vacuum Science & Technology B. 2000 ; 18( 4): 1991-1996.Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JVTBD9000018000004001991000001&idtype=cvips
  • In: Proceedings. Conference title: International Workshop on Nitride Semiconductors. Unidade: IF

    Subjects: MATÉRIA CONDENSADA, SEMICONDUTORES

    How to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      FERNANDEZ, J R L; TABATA, A; CHITTA, V A; et al. Overdamped electron plasma oscillations in cubic 'Al IND.X' 'Ga IND.1-X'N layers observed by raman scattering spectrocopy. Anais.. Tokyo: The Institute of Pure and Applied Physics-IPAP, 2000.
    • APA

      Fernandez, J. R. L., Tabata, A., Chitta, V. A., As, D. J., Frey, T., Noriega, O. C., et al. (2000). Overdamped electron plasma oscillations in cubic 'Al IND.X' 'Ga IND.1-X'N layers observed by raman scattering spectrocopy. In Proceedings. Tokyo: The Institute of Pure and Applied Physics-IPAP.
    • NLM

      Fernandez JRL, Tabata A, Chitta VA, As DJ, Frey T, Noriega OC, Silva MTO, Abramof E, Schikora D, Lischka K, Leite JR. Overdamped electron plasma oscillations in cubic 'Al IND.X' 'Ga IND.1-X'N layers observed by raman scattering spectrocopy. Proceedings. 2000 ;
    • Vancouver

      Fernandez JRL, Tabata A, Chitta VA, As DJ, Frey T, Noriega OC, Silva MTO, Abramof E, Schikora D, Lischka K, Leite JR. Overdamped electron plasma oscillations in cubic 'Al IND.X' 'Ga IND.1-X'N layers observed by raman scattering spectrocopy. Proceedings. 2000 ;


Digital Library of Intellectual Production of Universidade de São Paulo     2012 - 2020