Filtros : "Srivastava, G. P." Limpar

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  • Source: Journal of Chemical Physics. Unidade: IF

    Subjects: FÍSICO-QUÍMICA, ESTRUTURA ELETRÔNICA, SUPERFÍCIE FÍSICA, SEMICONDUTORES

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    • ABNT

      MIOTTO, P; FERRAZ, A. C.; SRIVASTAVA, G. P. Maleic anhydride adsorption on silicon (001). Journal of Chemical Physics, New York, The Institute, v. 123, n. 7, p. 074708/1-074708/9, 2005. Disponível em: < http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JCPSA6000123000007074708000001&idtype=cvips > DOI: 10.1063/1.2006676.
    • APA

      Miotto, P., Ferraz, A. C., & Srivastava, G. P. (2005). Maleic anhydride adsorption on silicon (001). Journal of Chemical Physics, 123( 7), 074708/1-074708/9. doi:10.1063/1.2006676
    • NLM

      Miotto P, Ferraz AC, Srivastava GP. Maleic anhydride adsorption on silicon (001) [Internet]. Journal of Chemical Physics. 2005 ; 123( 7): 074708/1-074708/9.Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JCPSA6000123000007074708000001&idtype=cvips
    • Vancouver

      Miotto P, Ferraz AC, Srivastava GP. Maleic anhydride adsorption on silicon (001) [Internet]. Journal of Chemical Physics. 2005 ; 123( 7): 074708/1-074708/9.Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JCPSA6000123000007074708000001&idtype=cvips
  • Source: Applied Surface Science. Unidade: IF

    Assunto: MATÉRIA CONDENSADA

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    • ABNT

      FERRAZ, A. C.; SRIVASTAVA, G. P. Passivation of InP(001) by sulfur. Applied Surface Science, Amsterdam, Elsevier, v. 142, n. 1-4, p. 23-27, 1999. Disponível em: < http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5295&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=aead54c036240d8275b1f9cf184aa020 > DOI: 10.1016/s0169-4332(98)00732-6.
    • APA

      Ferraz, A. C., & Srivastava, G. P. (1999). Passivation of InP(001) by sulfur. Applied Surface Science, 142( 1-4), 23-27. doi:10.1016/s0169-4332(98)00732-6
    • NLM

      Ferraz AC, Srivastava GP. Passivation of InP(001) by sulfur [Internet]. Applied Surface Science. 1999 ; 142( 1-4): 23-27.Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5295&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=aead54c036240d8275b1f9cf184aa020
    • Vancouver

      Ferraz AC, Srivastava GP. Passivation of InP(001) by sulfur [Internet]. Applied Surface Science. 1999 ; 142( 1-4): 23-27.Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5295&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=aead54c036240d8275b1f9cf184aa020
  • Source: Surface Science. Unidade: IF

    Assunto: MATÉRIA CONDENSADA

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    • ABNT

      MIOTTO, R.; SRIVASTAVA, G. P.; FERRAZ, A. C. The role of generalised gradient approximation in structural and electronic properties of bulk and surface of 'beta'-GaN and GaAs. Surface Science, Amsterdam, Elsevier Science, v. 435, p. 377-381, 1999. DOI: 10.1016/s0039-6028(99)00109-0.
    • APA

      Miotto, R., Srivastava, G. P., & Ferraz, A. C. (1999). The role of generalised gradient approximation in structural and electronic properties of bulk and surface of 'beta'-GaN and GaAs. Surface Science, 435, 377-381. doi:10.1016/s0039-6028(99)00109-0
    • NLM

      Miotto R, Srivastava GP, Ferraz AC. The role of generalised gradient approximation in structural and electronic properties of bulk and surface of 'beta'-GaN and GaAs. Surface Science. 1999 ; 435 377-381.
    • Vancouver

      Miotto R, Srivastava GP, Ferraz AC. The role of generalised gradient approximation in structural and electronic properties of bulk and surface of 'beta'-GaN and GaAs. Surface Science. 1999 ; 435 377-381.
  • Source: Surface Science. Unidade: IF

    Assunto: MATÉRIA CONDENSADA

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    • ABNT

      MIOTTO, R.; SRIVASTAVA, G. P.; FERRAZ, A. C. First-principles pseudopotential study of GaN and BN (110) surfaces. Surface Science, Amsterdam, Elsevier North Holland, v. 426, n. 1, p. 75-82, 1999. DOI: 10.1016/s0039-6028(99)00282-4.
    • APA

      Miotto, R., Srivastava, G. P., & Ferraz, A. C. (1999). First-principles pseudopotential study of GaN and BN (110) surfaces. Surface Science, 426( 1), 75-82. doi:10.1016/s0039-6028(99)00282-4
    • NLM

      Miotto R, Srivastava GP, Ferraz AC. First-principles pseudopotential study of GaN and BN (110) surfaces. Surface Science. 1999 ; 426( 1): 75-82.
    • Vancouver

      Miotto R, Srivastava GP, Ferraz AC. First-principles pseudopotential study of GaN and BN (110) surfaces. Surface Science. 1999 ; 426( 1): 75-82.
  • Source: Physical Review B. Unidade: IF

    Assunto: FÍSICA

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    • ABNT

      MIOTTO, R.; SRIVASTAVA, G. P.; FERRAZ, A. C. Role of generalized-gradient approximation in structural and electronic properties of bulk and surface of 'BETA'-GaN and GaAs. Physical Review B, Woodbury, The Society, v. 59, n. 4, p. 3008-3014, 1999. DOI: 10.1103/physrevb.59.3008.
    • APA

      Miotto, R., Srivastava, G. P., & Ferraz, A. C. (1999). Role of generalized-gradient approximation in structural and electronic properties of bulk and surface of 'BETA'-GaN and GaAs. Physical Review B, 59( 4), 3008-3014. doi:10.1103/physrevb.59.3008
    • NLM

      Miotto R, Srivastava GP, Ferraz AC. Role of generalized-gradient approximation in structural and electronic properties of bulk and surface of 'BETA'-GaN and GaAs. Physical Review B. 1999 ; 59( 4): 3008-3014.
    • Vancouver

      Miotto R, Srivastava GP, Ferraz AC. Role of generalized-gradient approximation in structural and electronic properties of bulk and surface of 'BETA'-GaN and GaAs. Physical Review B. 1999 ; 59( 4): 3008-3014.
  • Source: Surface Science. Unidade: IF

    Assunto: MATÉRIA CONDENSADA

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    • ABNT

      CASAGRANDE, Douglas; SRIVASTAVA, G. P.; FERRAZ, A. C. Theoretical calculations for Si(001)-(2x1)Cl. Surface Science, Amsterdam, Elsevier North-Holland, v. 404, n. 1-3, p. 653-657, 1998. DOI: 10.1016/s0039-6028(97)00929-1.
    • APA

      Casagrande, D., Srivastava, G. P., & Ferraz, A. C. (1998). Theoretical calculations for Si(001)-(2x1)Cl. Surface Science, 404( 1-3), 653-657. doi:10.1016/s0039-6028(97)00929-1
    • NLM

      Casagrande D, Srivastava GP, Ferraz AC. Theoretical calculations for Si(001)-(2x1)Cl. Surface Science. 1998 ; 404( 1-3): 653-657.
    • Vancouver

      Casagrande D, Srivastava GP, Ferraz AC. Theoretical calculations for Si(001)-(2x1)Cl. Surface Science. 1998 ; 404( 1-3): 653-657.
  • Source: Physical Review B. Unidade: IF

    Assunto: MATÉRIA CONDENSADA

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    • ABNT

      MIOTTO, R.; SRIVASTAVA, G. P.; FERRAZ, A. C. Dissociative adsorption of 'NH IND.3' on Si(001)-(2x1). Physical Review B, Woodbury, The Society, v. 58, n. 12, p. 7944-7949, 1998.
    • APA

      Miotto, R., Srivastava, G. P., & Ferraz, A. C. (1998). Dissociative adsorption of 'NH IND.3' on Si(001)-(2x1). Physical Review B, 58( 12), 7944-7949.
    • NLM

      Miotto R, Srivastava GP, Ferraz AC. Dissociative adsorption of 'NH IND.3' on Si(001)-(2x1). Physical Review B. 1998 ; 58( 12): 7944-7949.
    • Vancouver

      Miotto R, Srivastava GP, Ferraz AC. Dissociative adsorption of 'NH IND.3' on Si(001)-(2x1). Physical Review B. 1998 ; 58( 12): 7944-7949.
  • Source: Surface Science. Conference titles: European Conference on Surface Science. Unidade: IF

    Assunto: MATÉRIA CONDENSADA

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    • ABNT

      FERRAZ, A. C.; SRIVASTAVA, G. P. Atomic geometry and electronic structure of S/InP(001). Surface Science[S.l: s.n.], 1997.
    • APA

      Ferraz, A. C., & Srivastava, G. P. (1997). Atomic geometry and electronic structure of S/InP(001). Surface Science. Amsterdam: Elsevier.
    • NLM

      Ferraz AC, Srivastava GP. Atomic geometry and electronic structure of S/InP(001). Surface Science. 1997 ; 377-379 121-124.
    • Vancouver

      Ferraz AC, Srivastava GP. Atomic geometry and electronic structure of S/InP(001). Surface Science. 1997 ; 377-379 121-124.
  • Source: Surface Science. Unidade: IF

    Assunto: MATÉRIA CONDENSADA

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      FERRAZ, A. C.; SRIVASTAVA, G. P. Atomic geometry and electronic structure of S/InP(001). Surface Science, Amsterdam, Elsevier North Holland, v. 377-379, p. 121-124, 1997.
    • APA

      Ferraz, A. C., & Srivastava, G. P. (1997). Atomic geometry and electronic structure of S/InP(001). Surface Science, 377-379, 121-124.
    • NLM

      Ferraz AC, Srivastava GP. Atomic geometry and electronic structure of S/InP(001). Surface Science. 1997 ; 377-379 121-124.
    • Vancouver

      Ferraz AC, Srivastava GP. Atomic geometry and electronic structure of S/InP(001). Surface Science. 1997 ; 377-379 121-124.
  • Source: Semiconductor Science and Technology. Unidade: IF

    Assunto: MATÉRIA CONDENSADA

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    • ABNT

      FERRAZ, A. C.; SRIVASTAVA, G. P. Atomic relaxation and electronic states in ultrathin 'GE' / 'ZN''SE' superlattices. Semiconductor Science and Technology, London, v. 8 , n. ja 1993, p. 67-72, 1993.
    • APA

      Ferraz, A. C., & Srivastava, G. P. (1993). Atomic relaxation and electronic states in ultrathin 'GE' / 'ZN''SE' superlattices. Semiconductor Science and Technology, 8 ( ja 1993), 67-72.
    • NLM

      Ferraz AC, Srivastava GP. Atomic relaxation and electronic states in ultrathin 'GE' / 'ZN''SE' superlattices. Semiconductor Science and Technology. 1993 ;8 ( ja 1993): 67-72.
    • Vancouver

      Ferraz AC, Srivastava GP. Atomic relaxation and electronic states in ultrathin 'GE' / 'ZN''SE' superlattices. Semiconductor Science and Technology. 1993 ;8 ( ja 1993): 67-72.
  • Source: Proceedings. Conference titles: Escola Brasileira de Fisica de Semicondutores. Unidade: IF

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    • ABNT

      FERRAZ, A. C.; SRIVASTAVA, G. P. Theoretical studies of ' (GAAS) IND.N'' (ALAS) IND.N' superlattices. Anais.. Sisngapore: World Scientific, 1988.
    • APA

      Ferraz, A. C., & Srivastava, G. P. (1988). Theoretical studies of ' (GAAS) IND.N'' (ALAS) IND.N' superlattices. In Proceedings. Sisngapore: World Scientific.
    • NLM

      Ferraz AC, Srivastava GP. Theoretical studies of ' (GAAS) IND.N'' (ALAS) IND.N' superlattices. Proceedings. 1988 ;
    • Vancouver

      Ferraz AC, Srivastava GP. Theoretical studies of ' (GAAS) IND.N'' (ALAS) IND.N' superlattices. Proceedings. 1988 ;
  • Source: Proceedings. Conference titles: Escola Brasileira de Fisica de Semicondutores. Unidade: IF

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      FERRAZ, A. C.; SRIVASTAVA, G. P. Atomic geometries of iii-v compound semiconductor surfaces by total energy and force methods. Anais.. Singapore: World Scientific, 1988.
    • APA

      Ferraz, A. C., & Srivastava, G. P. (1988). Atomic geometries of iii-v compound semiconductor surfaces by total energy and force methods. In Proceedings. Singapore: World Scientific.
    • NLM

      Ferraz AC, Srivastava GP. Atomic geometries of iii-v compound semiconductor surfaces by total energy and force methods. Proceedings. 1988 ;
    • Vancouver

      Ferraz AC, Srivastava GP. Atomic geometries of iii-v compound semiconductor surfaces by total energy and force methods. Proceedings. 1988 ;
  • Source: Surface Science. Unidade: IF

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      SRIVASTAVA, G. P.; FERRAZ, A. C. Electronic band structure of ' (GAAS) IND.N'' (ALAS) IND.N' and ' (GAAS) IND.N'' (ZNSE) IND.N' superlattices. Surface Science[S.l.], v. 189-90, n. 1-3, p. 913-8, 1987.
    • APA

      Srivastava, G. P., & Ferraz, A. C. (1987). Electronic band structure of ' (GAAS) IND.N'' (ALAS) IND.N' and ' (GAAS) IND.N'' (ZNSE) IND.N' superlattices. Surface Science, 189-90( 1-3), 913-8.
    • NLM

      Srivastava GP, Ferraz AC. Electronic band structure of ' (GAAS) IND.N'' (ALAS) IND.N' and ' (GAAS) IND.N'' (ZNSE) IND.N' superlattices. Surface Science. 1987 ;189-90( 1-3): 913-8.
    • Vancouver

      Srivastava GP, Ferraz AC. Electronic band structure of ' (GAAS) IND.N'' (ALAS) IND.N' and ' (GAAS) IND.N'' (ZNSE) IND.N' superlattices. Surface Science. 1987 ;189-90( 1-3): 913-8.
  • Source: Surface Science. Unidade: IF

    DOIHow to cite
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    • ABNT

      FERRAZ, A. C.; SRIVASTAVA, G. P. Determination of the surface geometry of gaas(110) by the total energy and force methods. Surface Science[S.l.], v. 182, n. 1-2, p. 161-78, 1987. DOI: 10.1016/0167-2584(87)90092-2.
    • APA

      Ferraz, A. C., & Srivastava, G. P. (1987). Determination of the surface geometry of gaas(110) by the total energy and force methods. Surface Science, 182( 1-2), 161-78. doi:10.1016/0167-2584(87)90092-2
    • NLM

      Ferraz AC, Srivastava GP. Determination of the surface geometry of gaas(110) by the total energy and force methods. Surface Science. 1987 ;182( 1-2): 161-78.
    • Vancouver

      Ferraz AC, Srivastava GP. Determination of the surface geometry of gaas(110) by the total energy and force methods. Surface Science. 1987 ;182( 1-2): 161-78.
  • Source: Semiconductors Science Technology. Unidade: IF

    Assunto: ESTRUTURA ELETRÔNICA

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    • ABNT

      FERRAZ, A. C.; SRIVASTAVA, G. P. Electronic band structure of ' ( 'ga''as' ) IND.N'' (A1AS) IND.N' superlattices. Semiconductors Science Technology[S.l.], v. 1 , n. 3 , p. 169-71, 1986.
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      Ferraz, A. C., & Srivastava, G. P. (1986). Electronic band structure of ' ( 'ga''as' ) IND.N'' (A1AS) IND.N' superlattices. Semiconductors Science Technology, 1 ( 3 ), 169-71.
    • NLM

      Ferraz AC, Srivastava GP. Electronic band structure of ' ( 'ga''as' ) IND.N'' (A1AS) IND.N' superlattices. Semiconductors Science Technology. 1986 ;1 ( 3 ): 169-71.
    • Vancouver

      Ferraz AC, Srivastava GP. Electronic band structure of ' ( 'ga''as' ) IND.N'' (A1AS) IND.N' superlattices. Semiconductors Science Technology. 1986 ;1 ( 3 ): 169-71.
  • Source: Journal of Physics C. Unidade: IF

    Assunto: GEOMETRIA

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      FERRAZ, A. C.; SRIVASTAVA, G. P. Atomic geometry of the znse (110), surface: determination by total-energy methods. Journal of Physics C[S.l.], v. 19, n. 30, p. 5987-94, 1986.
    • APA

      Ferraz, A. C., & Srivastava, G. P. (1986). Atomic geometry of the znse (110), surface: determination by total-energy methods. Journal of Physics C, 19( 30), 5987-94.
    • NLM

      Ferraz AC, Srivastava GP. Atomic geometry of the znse (110), surface: determination by total-energy methods. Journal of Physics C. 1986 ;19( 30): 5987-94.
    • Vancouver

      Ferraz AC, Srivastava GP. Atomic geometry of the znse (110), surface: determination by total-energy methods. Journal of Physics C. 1986 ;19( 30): 5987-94.

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