Filtros : "Schmidt, T M" Limpar

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  • Source: IEEE Transactions on Nanotechnology. Unidade: IF

    Assunto: FERROMAGNETISMO

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    • ABNT

      MIWA, R H; SCHMIDT, T M; FAZZIO, A. Tuning low-spin to high-spin 'MN' pairs in 2-D 'ZN''O' by injecting holes. IEEE Transactions on Nanotechnology, New York, v. 11, n. 1, p. 71-76, 2012.
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      Miwa, R. H., Schmidt, T. M., & Fazzio, A. (2012). Tuning low-spin to high-spin 'MN' pairs in 2-D 'ZN''O' by injecting holes. IEEE Transactions on Nanotechnology, 11( 1), 71-76.
    • NLM

      Miwa RH, Schmidt TM, Fazzio A. Tuning low-spin to high-spin 'MN' pairs in 2-D 'ZN''O' by injecting holes. IEEE Transactions on Nanotechnology. 2012 ;11( 1): 71-76.
    • Vancouver

      Miwa RH, Schmidt TM, Fazzio A. Tuning low-spin to high-spin 'MN' pairs in 2-D 'ZN''O' by injecting holes. IEEE Transactions on Nanotechnology. 2012 ;11( 1): 71-76.
  • Source: PHYSICAL REVIEW B. Unidade: IF

    Assunto: FERROMAGNETISMO

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      MIWA, R H; SCHMIDT, T M; FAZZIO, A. Piezomagnetic behavior of Co-doped 'ZN'O nanoribbons. PHYSICAL REVIEW B, Woodbury, v. 84, n. 15, p. 155309, 2011. Disponível em: < http://prb.aps.org/pdf/PRB/v84/i15/e155309 > DOI: 10.1103/physrevb.84.155309.
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      Miwa, R. H., Schmidt, T. M., & Fazzio, A. (2011). Piezomagnetic behavior of Co-doped 'ZN'O nanoribbons. PHYSICAL REVIEW B, 84( 15), 155309. doi:10.1103/physrevb.84.155309
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      Miwa RH, Schmidt TM, Fazzio A. Piezomagnetic behavior of Co-doped 'ZN'O nanoribbons [Internet]. PHYSICAL REVIEW B. 2011 ;84( 15): 155309.Available from: http://prb.aps.org/pdf/PRB/v84/i15/e155309
    • Vancouver

      Miwa RH, Schmidt TM, Fazzio A. Piezomagnetic behavior of Co-doped 'ZN'O nanoribbons [Internet]. PHYSICAL REVIEW B. 2011 ;84( 15): 155309.Available from: http://prb.aps.org/pdf/PRB/v84/i15/e155309
  • Unidade: IF

    Assunto: SEMICONDUTORES

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      MIWA, R H; SCHMIDT, T M; SCOPEL, W L; FAZZIO, A. Doping of graphene adsorbed on the a-'SI''O IND.2' surface. [S.l: s.n.], 2011.
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      Miwa, R. H., Schmidt, T. M., Scopel, W. L., & Fazzio, A. (2011). Doping of graphene adsorbed on the a-'SI''O IND.2' surface. São Paulo.
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      Miwa RH, Schmidt TM, Scopel WL, Fazzio A. Doping of graphene adsorbed on the a-'SI''O IND.2' surface. 2011 ;
    • Vancouver

      Miwa RH, Schmidt TM, Scopel WL, Fazzio A. Doping of graphene adsorbed on the a-'SI''O IND.2' surface. 2011 ;
  • Source: Physical Review B. Unidade: IF

    Assunto: FERROMAGNETISMO

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      SCHMIDT, T M; MIWA, R H; FAZZIO, A. Ferromagnetic coupling in a Co-doped graphenelike ZnO sheet. Physical Review B, New York, v. 81, n. 19, p. 195413-1-195413-4, 2010. DOI: 10.1103/physrevb.81.195413.
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      Schmidt, T. M., Miwa, R. H., & Fazzio, A. (2010). Ferromagnetic coupling in a Co-doped graphenelike ZnO sheet. Physical Review B, 81( 19), 195413-1-195413-4. doi:10.1103/physrevb.81.195413
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      Schmidt TM, Miwa RH, Fazzio A. Ferromagnetic coupling in a Co-doped graphenelike ZnO sheet. Physical Review B. 2010 ; 81( 19): 195413-1-195413-4.
    • Vancouver

      Schmidt TM, Miwa RH, Fazzio A. Ferromagnetic coupling in a Co-doped graphenelike ZnO sheet. Physical Review B. 2010 ; 81( 19): 195413-1-195413-4.
  • Source: Physical Review B. Unidade: IF

    Assunto: FERROMAGNETISMO

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      SCHMIDT, T M; MIWA, R H; FAZZIO, Adalberto. Ferromagnetic coupling in a Co-doped graphenelike ZnO sheet. Physical Review B, Woodbury, v. 81, n. 19, p. 195413/1-195413/4, 2010. Disponível em: < http://prb.aps.org/pdf/PRB/v81/i19/e195413 > DOI: 10.1103/physrevb.81.195413.
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      Schmidt, T. M., Miwa, R. H., & Fazzio, A. (2010). Ferromagnetic coupling in a Co-doped graphenelike ZnO sheet. Physical Review B, 81( 19), 195413/1-195413/4. doi:10.1103/physrevb.81.195413
    • NLM

      Schmidt TM, Miwa RH, Fazzio A. Ferromagnetic coupling in a Co-doped graphenelike ZnO sheet [Internet]. Physical Review B. 2010 ; 81( 19): 195413/1-195413/4.Available from: http://prb.aps.org/pdf/PRB/v81/i19/e195413
    • Vancouver

      Schmidt TM, Miwa RH, Fazzio A. Ferromagnetic coupling in a Co-doped graphenelike ZnO sheet [Internet]. Physical Review B. 2010 ; 81( 19): 195413/1-195413/4.Available from: http://prb.aps.org/pdf/PRB/v81/i19/e195413
  • Source: Physical Review B. Unidade: IF

    Assunto: NANOPARTÍCULAS

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      ROSSATO, J; SCHMIDT, T M; FAZZIO, Adalberto; BAIERLE, Rogerio Jose. First-principles study of the adsorption of atomic and molecular hydrogen on BC2N nanotubes. Physical Review B, Woodbury, v. 77, n. 3, p. 035129/1-035129/6, 2008. Disponível em: < http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000077000003035129000001&idtype=cvips&prog=normal > DOI: 10.1103/physrevb.77.035129.
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      Rossato, J., Schmidt, T. M., Fazzio, A., & Baierle, R. J. (2008). First-principles study of the adsorption of atomic and molecular hydrogen on BC2N nanotubes. Physical Review B, 77( 3), 035129/1-035129/6. doi:10.1103/physrevb.77.035129
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      Rossato J, Schmidt TM, Fazzio A, Baierle RJ. First-principles study of the adsorption of atomic and molecular hydrogen on BC2N nanotubes [Internet]. Physical Review B. 2008 ; 77( 3): 035129/1-035129/6.Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000077000003035129000001&idtype=cvips&prog=normal
    • Vancouver

      Rossato J, Schmidt TM, Fazzio A, Baierle RJ. First-principles study of the adsorption of atomic and molecular hydrogen on BC2N nanotubes [Internet]. Physical Review B. 2008 ; 77( 3): 035129/1-035129/6.Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000077000003035129000001&idtype=cvips&prog=normal
  • Source: Solid State Communications. Unidade: IF

    Subjects: VIDRO, VIDRO

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      BAIERLE, Rogerio Jose; SCHMIDT, T M; FAZZIO, Adalberto. Adsorption of CO and NO molecules on carbon doped boron nitride nanotubes. Solid State Communications, Oxford, v. 141, n. 1-2, p. 49-53, 2007. Disponível em: < http://www.sciencedirect.com/science/journal/00381098 > DOI: 10.1016/j.ssc.2007.01.036.
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      Baierle, R. J., Schmidt, T. M., & Fazzio, A. (2007). Adsorption of CO and NO molecules on carbon doped boron nitride nanotubes. Solid State Communications, 141( 1-2), 49-53. doi:10.1016/j.ssc.2007.01.036
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      Baierle RJ, Schmidt TM, Fazzio A. Adsorption of CO and NO molecules on carbon doped boron nitride nanotubes [Internet]. Solid State Communications. 2007 ; 141( 1-2): 49-53.Available from: http://www.sciencedirect.com/science/journal/00381098
    • Vancouver

      Baierle RJ, Schmidt TM, Fazzio A. Adsorption of CO and NO molecules on carbon doped boron nitride nanotubes [Internet]. Solid State Communications. 2007 ; 141( 1-2): 49-53.Available from: http://www.sciencedirect.com/science/journal/00381098
  • Source: Physical Review B. Unidade: IF

    Subjects: NANOTECNOLOGIA, ESTRUTURA ELETRÔNICA

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      MIWA, R H; SCHMIDT, T M; FAZZIO, Adalberto. EL2-like defects in InP nanowires: an ab initio total energy investigation. Physical Review B, Woodbury, v. 75, n. 16, p. 165324/1-165324/5, 2007. Disponível em: < http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000075000016165324000001&idtype=cvips&prog=normal > DOI: 10.1103/physrevb.75.165324.
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      Miwa, R. H., Schmidt, T. M., & Fazzio, A. (2007). EL2-like defects in InP nanowires: an ab initio total energy investigation. Physical Review B, 75( 16), 165324/1-165324/5. doi:10.1103/physrevb.75.165324
    • NLM

      Miwa RH, Schmidt TM, Fazzio A. EL2-like defects in InP nanowires: an ab initio total energy investigation [Internet]. Physical Review B. 2007 ; 75( 16): 165324/1-165324/5.Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000075000016165324000001&idtype=cvips&prog=normal
    • Vancouver

      Miwa RH, Schmidt TM, Fazzio A. EL2-like defects in InP nanowires: an ab initio total energy investigation [Internet]. Physical Review B. 2007 ; 75( 16): 165324/1-165324/5.Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000075000016165324000001&idtype=cvips&prog=normal
  • Source: Physical Review B. Unidade: IF

    Subjects: MATÉRIA CONDENSADA, ESTRUTURA ELETRÔNICA, PROPRIEDADES DOS MATERIAIS, SEMICONDUTORES, FERROMAGNETISMO

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      SCHMIDT, T M; VENEZUELA, P; ARANTES JUNIOR, Jeverson Teodoro; FAZZIO, Adalberto. Electronic and magnetic properties of Mn-doped InP nanowires from first principles. Physical Review B, Woodbury, v. 73, n. 23, p. 235330, 2006. Disponível em: < http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000073000023235330000001&idtype=cvips&prog=normal > DOI: 10.1103/physrevb.73.235330.
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      Schmidt, T. M., Venezuela, P., Arantes Junior, J. T., & Fazzio, A. (2006). Electronic and magnetic properties of Mn-doped InP nanowires from first principles. Physical Review B, 73( 23), 235330. doi:10.1103/physrevb.73.235330
    • NLM

      Schmidt TM, Venezuela P, Arantes Junior JT, Fazzio A. Electronic and magnetic properties of Mn-doped InP nanowires from first principles [Internet]. Physical Review B. 2006 ; 73( 23): 235330.Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000073000023235330000001&idtype=cvips&prog=normal
    • Vancouver

      Schmidt TM, Venezuela P, Arantes Junior JT, Fazzio A. Electronic and magnetic properties of Mn-doped InP nanowires from first principles [Internet]. Physical Review B. 2006 ; 73( 23): 235330.Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000073000023235330000001&idtype=cvips&prog=normal
  • Source: Brazilian Journal of Physics. Unidade: IF

    Subjects: ESTRUTURA ELETRÔNICA, MATÉRIA CONDENSADA

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      SCHMIDT, T M; ARANTES JUNIOR, Jeverson Teodoro; FAZZIO, Adalberto. First principles calculations of As impurities in the presence of a "90 GRAUS" partial dislocation in Si. Brazilian Journal of Physics, São Paulo, v. 36, n. 2A, p. 261-263, 2006. Disponível em: < http://www.sbfisica.org.br/bjp/files/v36_261.pdf >.
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      Schmidt, T. M., Arantes Junior, J. T., & Fazzio, A. (2006). First principles calculations of As impurities in the presence of a "90 GRAUS" partial dislocation in Si. Brazilian Journal of Physics, 36( 2A), 261-263. Recuperado de http://www.sbfisica.org.br/bjp/files/v36_261.pdf
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      Schmidt TM, Arantes Junior JT, Fazzio A. First principles calculations of As impurities in the presence of a "90 GRAUS" partial dislocation in Si [Internet]. Brazilian Journal of Physics. 2006 ; 36( 2A): 261-263.Available from: http://www.sbfisica.org.br/bjp/files/v36_261.pdf
    • Vancouver

      Schmidt TM, Arantes Junior JT, Fazzio A. First principles calculations of As impurities in the presence of a "90 GRAUS" partial dislocation in Si [Internet]. Brazilian Journal of Physics. 2006 ; 36( 2A): 261-263.Available from: http://www.sbfisica.org.br/bjp/files/v36_261.pdf
  • Source: Nanotechnology. Unidade: IF

    Subjects: MATERIAIS, ESTRUTURA ELETRÔNICA, NANOTECNOLOGIA

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      PIQUINI, P; BAIERLE, Rogerio Jose; SCHMIDT, T M; FAZZIO, Adalberto. Formation energy of native defects in BN nanotubes: an ab initio study. Nanotechnology, Bristol, v. 16, n. 6, p. 827-831, 2005. Disponível em: < http://www.iop.org/EJ/toc/0957-4484/16/6 > DOI: 10.1088/0957-4484/16/6/035.
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      Piquini, P., Baierle, R. J., Schmidt, T. M., & Fazzio, A. (2005). Formation energy of native defects in BN nanotubes: an ab initio study. Nanotechnology, 16( 6), 827-831. doi:10.1088/0957-4484/16/6/035
    • NLM

      Piquini P, Baierle RJ, Schmidt TM, Fazzio A. Formation energy of native defects in BN nanotubes: an ab initio study [Internet]. Nanotechnology. 2005 ; 16( 6): 827-831.Available from: http://www.iop.org/EJ/toc/0957-4484/16/6
    • Vancouver

      Piquini P, Baierle RJ, Schmidt TM, Fazzio A. Formation energy of native defects in BN nanotubes: an ab initio study [Internet]. Nanotechnology. 2005 ; 16( 6): 827-831.Available from: http://www.iop.org/EJ/toc/0957-4484/16/6
  • Source: Physical Review B. Unidade: IF

    Subjects: MATÉRIA CONDENSADA, FOTOLUMINESCÊNCIA, ESTRUTURA ELETRÔNICA

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      SCHMIDT, T M; MIWA, R H; VENEZUELA, P; FAZZIO, Adalberto. Stability and electronic confinement of free-standing InP nanowires: Ab initio calculations. Physical Review B, Woodbury, v. 72, n. 19, p. 193404/1-193404/4, 2005.
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      Schmidt, T. M., Miwa, R. H., Venezuela, P., & Fazzio, A. (2005). Stability and electronic confinement of free-standing InP nanowires: Ab initio calculations. Physical Review B, 72( 19), 193404/1-193404/4.
    • NLM

      Schmidt TM, Miwa RH, Venezuela P, Fazzio A. Stability and electronic confinement of free-standing InP nanowires: Ab initio calculations. Physical Review B. 2005 ; 72( 19): 193404/1-193404/4.
    • Vancouver

      Schmidt TM, Miwa RH, Venezuela P, Fazzio A. Stability and electronic confinement of free-standing InP nanowires: Ab initio calculations. Physical Review B. 2005 ; 72( 19): 193404/1-193404/4.
  • Source: Physical Review. Unidade: IF

    Subjects: ESTRUTURA ELETRÔNICA, POLÍMEROS (MATERIAIS), ESTRUTURA DOS SÓLIDOS, CRISTALOGRAFIA

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      SCHMIDT, T M; BAIERLE, Rogerio Jose; PIQUINI, P; FAZZIO, Adalberto. Theoretical study of native defects in BN nanotubes. Physical Review, Woodbury, v. 67, n. 11, p. 113407/1-113407/4, 2003. Disponível em: < http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000067000011113407000001&idtype=cvips > DOI: 10.1103/physrevb.67.113407.
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      Schmidt, T. M., Baierle, R. J., Piquini, P., & Fazzio, A. (2003). Theoretical study of native defects in BN nanotubes. Physical Review, 67( 11), 113407/1-113407/4. doi:10.1103/physrevb.67.113407
    • NLM

      Schmidt TM, Baierle RJ, Piquini P, Fazzio A. Theoretical study of native defects in BN nanotubes [Internet]. Physical Review. 2003 ; 67( 11): 113407/1-113407/4.Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000067000011113407000001&idtype=cvips
    • Vancouver

      Schmidt TM, Baierle RJ, Piquini P, Fazzio A. Theoretical study of native defects in BN nanotubes [Internet]. Physical Review. 2003 ; 67( 11): 113407/1-113407/4.Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000067000011113407000001&idtype=cvips
  • Source: Book of Abstracts II (Poster). Conference titles: International Conference on Defects in Semiconductors. Unidade: IF

    Assunto: SEMICONDUTORES

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      SCHMIDT, T M; ARANTES JUNIOR, Jeverson Teodoro; FAZZIO, Adalberto. The interaction of point defects with a 90 'GRAUS' partial dislocation in Si. Anais.. Amsterdam: Elsevier Science, 2003.
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      Schmidt, T. M., Arantes Junior, J. T., & Fazzio, A. (2003). The interaction of point defects with a 90 'GRAUS' partial dislocation in Si. In Book of Abstracts II (Poster). Amsterdam: Elsevier Science.
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      Schmidt TM, Arantes Junior JT, Fazzio A. The interaction of point defects with a 90 'GRAUS' partial dislocation in Si. Book of Abstracts II (Poster). 2003 ;
    • Vancouver

      Schmidt TM, Arantes Junior JT, Fazzio A. The interaction of point defects with a 90 'GRAUS' partial dislocation in Si. Book of Abstracts II (Poster). 2003 ;
  • Source: Solid State Communications. Unidade: IF

    Subjects: SEMICONDUTORES, MATÉRIA CONDENSADA (PROPRIEDADES MECÂNICAS;PROPRIEDADES TÉRMICAS)

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      SCHMIDT, T M; MIWA, R H; FAZZIO, Adalberto; MOTA, R. Ab initio calculations on the compensation mechanisms in InP. Solid State Communications, Oxford, v. 117, n. 6, p. 353-355, 2001. Disponível em: < http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=00381098&issue=v117i0006&article=353_aicotcmii&form=pdf&file=file.pdf > DOI: 10.1016/s0038-1098(00)00487-7.
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      Schmidt, T. M., Miwa, R. H., Fazzio, A., & Mota, R. (2001). Ab initio calculations on the compensation mechanisms in InP. Solid State Communications, 117( 6), 353-355. doi:10.1016/s0038-1098(00)00487-7
    • NLM

      Schmidt TM, Miwa RH, Fazzio A, Mota R. Ab initio calculations on the compensation mechanisms in InP [Internet]. Solid State Communications. 2001 ; 117( 6): 353-355.Available from: http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=00381098&issue=v117i0006&article=353_aicotcmii&form=pdf&file=file.pdf
    • Vancouver

      Schmidt TM, Miwa RH, Fazzio A, Mota R. Ab initio calculations on the compensation mechanisms in InP [Internet]. Solid State Communications. 2001 ; 117( 6): 353-355.Available from: http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=00381098&issue=v117i0006&article=353_aicotcmii&form=pdf&file=file.pdf
  • Source: Applied Physics Letters. Unidade: IF

    Subjects: ESTRUTURA ELETRÔNICA, SEMICONDUTORES

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      SCHMIDT, T M; JUSTO FILHO, João Francisco; FAZZIO, Adalberto. Stacking fault effects in pure and n-type doped GaAs. Applied Physics Letters, Woodbury, v. 78, n. 7, p. 907-909, 2001. Disponível em: < http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000078000007000907000001&idtype=cvips > DOI: 10.1063/1.1347005.
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      Schmidt, T. M., Justo Filho, J. F., & Fazzio, A. (2001). Stacking fault effects in pure and n-type doped GaAs. Applied Physics Letters, 78( 7), 907-909. doi:10.1063/1.1347005
    • NLM

      Schmidt TM, Justo Filho JF, Fazzio A. Stacking fault effects in pure and n-type doped GaAs [Internet]. Applied Physics Letters. 2001 ; 78( 7): 907-909.Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000078000007000907000001&idtype=cvips
    • Vancouver

      Schmidt TM, Justo Filho JF, Fazzio A. Stacking fault effects in pure and n-type doped GaAs [Internet]. Applied Physics Letters. 2001 ; 78( 7): 907-909.Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000078000007000907000001&idtype=cvips
  • Source: Physica B. Unidade: IF

    Subjects: MATERIAIS (PROPRIEDADES MECÂNICAS), ACÚSTICA (PROPRIEDADES MECÂNICAS), ESTRUTURA DOS SÓLIDOS, MECÂNICA DOS LÍQUIDOS, CRISTALOGRAFIA

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      JUSTO FILHO, João Francisco; SCHMIDT, T M; FAZZIO, Adalberto; ANTONELLI, A. Segregation of dopant atoms on extended defects in semiconductors. Physica B, Amsterdam, v. 302, n. 403-407, 2001. Disponível em: < http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=09214526&issue=v302-303inone&article=403_sodaoedis&form=pdf&file=file.pdf > DOI: 10.1016/s0921-4526(01)00462-8.
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      Justo Filho, J. F., Schmidt, T. M., Fazzio, A., & Antonelli, A. (2001). Segregation of dopant atoms on extended defects in semiconductors. Physica B, 302( 403-407). doi:10.1016/s0921-4526(01)00462-8
    • NLM

      Justo Filho JF, Schmidt TM, Fazzio A, Antonelli A. Segregation of dopant atoms on extended defects in semiconductors [Internet]. Physica B. 2001 ; 302( 403-407):Available from: http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=09214526&issue=v302-303inone&article=403_sodaoedis&form=pdf&file=file.pdf
    • Vancouver

      Justo Filho JF, Schmidt TM, Fazzio A, Antonelli A. Segregation of dopant atoms on extended defects in semiconductors [Internet]. Physica B. 2001 ; 302( 403-407):Available from: http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=09214526&issue=v302-303inone&article=403_sodaoedis&form=pdf&file=file.pdf
  • Source: Journal of Physics-Condensed Matter. Unidade: IF

    Assunto: MATÉRIA CONDENSADA

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      SCHMIDT, T M; JUSTO FILHO, João Francisco; FAZZIO, Adalberto. The effect of a stacking fault on the electronic properties of dopants in gallium arsenide. Journal of Physics-Condensed Matter, Bristol, v. 12, n. 49, p. 10235-10239, 2000. Disponível em: < http://www.iop.org/EJ3-Links/88/2sa4geTrGxbSN,i1WqPYmQ/c04923.pdf > DOI: 10.1088/0953-8984/12/49/323.
    • APA

      Schmidt, T. M., Justo Filho, J. F., & Fazzio, A. (2000). The effect of a stacking fault on the electronic properties of dopants in gallium arsenide. Journal of Physics-Condensed Matter, 12( 49), 10235-10239. doi:10.1088/0953-8984/12/49/323
    • NLM

      Schmidt TM, Justo Filho JF, Fazzio A. The effect of a stacking fault on the electronic properties of dopants in gallium arsenide [Internet]. Journal of Physics-Condensed Matter. 2000 ; 12( 49): 10235-10239.Available from: http://www.iop.org/EJ3-Links/88/2sa4geTrGxbSN,i1WqPYmQ/c04923.pdf
    • Vancouver

      Schmidt TM, Justo Filho JF, Fazzio A. The effect of a stacking fault on the electronic properties of dopants in gallium arsenide [Internet]. Journal of Physics-Condensed Matter. 2000 ; 12( 49): 10235-10239.Available from: http://www.iop.org/EJ3-Links/88/2sa4geTrGxbSN,i1WqPYmQ/c04923.pdf
  • Source: Journal of Physics-Condensed Matter. Unidade: IF

    Assunto: MATÉRIA CONDENSADA

    Acesso à fonteDOIHow to cite
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    • ABNT

      SCHMIDT, T M; JUSTO FILHO, João Francisco; FAZZIO, Adalberto. The effect of a stacking fault on the electronic properties of dopants in gallium arsenide. Journal of Physics-Condensed Matter, Bristol, v. 12, n. 49, p. 10235-10239, 2000. Disponível em: < http://www.iop.org/EJ3-Links/52/tSogcNkqqGxaOEYxXC4lSQ/c04923.pdf > DOI: 10.1088/0953-8984/12/49/323.
    • APA

      Schmidt, T. M., Justo Filho, J. F., & Fazzio, A. (2000). The effect of a stacking fault on the electronic properties of dopants in gallium arsenide. Journal of Physics-Condensed Matter, 12( 49), 10235-10239. doi:10.1088/0953-8984/12/49/323
    • NLM

      Schmidt TM, Justo Filho JF, Fazzio A. The effect of a stacking fault on the electronic properties of dopants in gallium arsenide [Internet]. Journal of Physics-Condensed Matter. 2000 ; 12( 49): 10235-10239.Available from: http://www.iop.org/EJ3-Links/52/tSogcNkqqGxaOEYxXC4lSQ/c04923.pdf
    • Vancouver

      Schmidt TM, Justo Filho JF, Fazzio A. The effect of a stacking fault on the electronic properties of dopants in gallium arsenide [Internet]. Journal of Physics-Condensed Matter. 2000 ; 12( 49): 10235-10239.Available from: http://www.iop.org/EJ3-Links/52/tSogcNkqqGxaOEYxXC4lSQ/c04923.pdf
  • Source: Physical Review B. Unidade: IF

    Assunto: FÍSICA

    DOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      PIQUINI, P; MOTA, R.; SCHMIDT, T M; FAZZIO, Adalberto. Theoretical studies of native defects in cubic boron nitride. Physical Review B[S.l.], v. 56, n. 7, p. 3556-3559, 1997. DOI: 10.1103/physrevb.56.3556.
    • APA

      Piquini, P., Mota, R., Schmidt, T. M., & Fazzio, A. (1997). Theoretical studies of native defects in cubic boron nitride. Physical Review B, 56( 7), 3556-3559. doi:10.1103/physrevb.56.3556
    • NLM

      Piquini P, Mota R, Schmidt TM, Fazzio A. Theoretical studies of native defects in cubic boron nitride. Physical Review B. 1997 ; 56( 7): 3556-3559.
    • Vancouver

      Piquini P, Mota R, Schmidt TM, Fazzio A. Theoretical studies of native defects in cubic boron nitride. Physical Review B. 1997 ; 56( 7): 3556-3559.

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