Filtros : "Rahim, Abdur" Limpar

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  • Source: Microelectronic Engineering. Unidade: IF

    Subjects: PROPRIEDADES DOS MATERIAIS, NANOTECNOLOGIA

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    • ABNT

      RAHIM, Abdur; GUSEV, G M; KVONC, Z D; et al. Energy relaxation of hot carriers near the charge neutrality point in HgTe-based 2D topological insulators. Microelectronic Engineering, Amsterdam, Elsevier Science, v. 206, p. 55-59, 2019. Disponível em: < https://doi.org/10.1016/j.mee.2018.12.011 > DOI: 10.1016/j.mee.2018.12.011.
    • APA

      Rahim, A., Gusev, G. M., Kvonc, Z. D., Olshanetsky, E. B., Mikhailov, N. N., & Dvoretsky, S. A. (2019). Energy relaxation of hot carriers near the charge neutrality point in HgTe-based 2D topological insulators. Microelectronic Engineering, 206, 55-59. doi:10.1016/j.mee.2018.12.011
    • NLM

      Rahim A, Gusev GM, Kvonc ZD, Olshanetsky EB, Mikhailov NN, Dvoretsky SA. Energy relaxation of hot carriers near the charge neutrality point in HgTe-based 2D topological insulators [Internet]. Microelectronic Engineering. 2019 ; 206 55-59.Available from: https://doi.org/10.1016/j.mee.2018.12.011
    • Vancouver

      Rahim A, Gusev GM, Kvonc ZD, Olshanetsky EB, Mikhailov NN, Dvoretsky SA. Energy relaxation of hot carriers near the charge neutrality point in HgTe-based 2D topological insulators [Internet]. Microelectronic Engineering. 2019 ; 206 55-59.Available from: https://doi.org/10.1016/j.mee.2018.12.011
  • Source: Microelectronic Engineering. Unidade: IF

    Assunto: BAIXA TEMPERATURA

    DOIHow to cite
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    • ABNT

      RAHIM, Abdur; GUSEV, G M; KVON, Z D; et al. Energy relaxation of hot carriers near the charge neutrality point in HgTe-based 2D topological insulators. Microelectronic Engineering, Amsterdan, Elsevier, v. 206, p. 55-59, 2019. DOI: 10.1016/j.mee.2018.12.011.
    • APA

      Rahim, A., Gusev, G. M., Kvon, Z. D., Olshanetsky, E. B., Mikhailov, N. N., & Dvoretsky, S. A. (2019). Energy relaxation of hot carriers near the charge neutrality point in HgTe-based 2D topological insulators. Microelectronic Engineering, 206, 55-59. doi:10.1016/j.mee.2018.12.011
    • NLM

      Rahim A, Gusev GM, Kvon ZD, Olshanetsky EB, Mikhailov NN, Dvoretsky SA. Energy relaxation of hot carriers near the charge neutrality point in HgTe-based 2D topological insulators. Microelectronic Engineering. 2019 ;206 55-59.
    • Vancouver

      Rahim A, Gusev GM, Kvon ZD, Olshanetsky EB, Mikhailov NN, Dvoretsky SA. Energy relaxation of hot carriers near the charge neutrality point in HgTe-based 2D topological insulators. Microelectronic Engineering. 2019 ;206 55-59.
  • Source: Journal of the Serbian Chemical Society. Unidade: IQSC

    Subjects: ELETROQUÍMICA, ENERGIA, METANOL

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    • ABNT

      MEHMOOD, Muhammad Haris; TARIQ, Muhammad; HASSAN, Ayaz; et al. Facile solvothermal synthesis of Pt–Cu nanocatalyst with improved electrocatalytic activity toward methanol oxidation. Journal of the Serbian Chemical Society, Belgrade, Serbian Chemical Society, v. 84, n. 10, p. 1155-1167, 2019. DOI: 10.2298/JSC190131041M.
    • APA

      Mehmood, M. H., Tariq, M., Hassan, A., Raziq, A., Rahim, A., & Khan, J. (2019). Facile solvothermal synthesis of Pt–Cu nanocatalyst with improved electrocatalytic activity toward methanol oxidation. Journal of the Serbian Chemical Society, 84( 10), 1155-1167. doi:10.2298/JSC190131041M
    • NLM

      Mehmood MH, Tariq M, Hassan A, Raziq A, Rahim A, Khan J. Facile solvothermal synthesis of Pt–Cu nanocatalyst with improved electrocatalytic activity toward methanol oxidation. Journal of the Serbian Chemical Society. 2019 ; 84( 10): 1155-1167.
    • Vancouver

      Mehmood MH, Tariq M, Hassan A, Raziq A, Rahim A, Khan J. Facile solvothermal synthesis of Pt–Cu nanocatalyst with improved electrocatalytic activity toward methanol oxidation. Journal of the Serbian Chemical Society. 2019 ; 84( 10): 1155-1167.
  • Source: Brazilian Journal of Physics. Unidades: IQ, EP

    Subjects: NANOPARTÍCULAS, ESPECTROSCOPIA RAMAN

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    • ABNT

      ARMAS, Luis E. G; ZAMARION, Vitor de Moraes; QUISPE, Luis T; et al. Effect of gold nanoparticles and unwanted residues on raman spectra of graphene sheets. Brazilian Journal of Physics, São Paulo, v. 48, p. 477–484, 2018. Disponível em: < http://dx.doi.org/10.1007/s13538-018-0596-2 > DOI: 10.1007/s13538-018-0596-2.
    • APA

      Armas, L. E. G., Zamarion, V. de M., Quispe, L. T., Otero, E. P. U., Menezes, J. W., Zegarra, L. B. R., et al. (2018). Effect of gold nanoparticles and unwanted residues on raman spectra of graphene sheets. Brazilian Journal of Physics, 48, 477–484. doi:10.1007/s13538-018-0596-2
    • NLM

      Armas LEG, Zamarion V de M, Quispe LT, Otero EPU, Menezes JW, Zegarra LBR, Rahim A, Araki K, Toma HE, Jacinto C, Valsechi C, Seabra AC. Effect of gold nanoparticles and unwanted residues on raman spectra of graphene sheets [Internet]. Brazilian Journal of Physics. 2018 ; 48 477–484.Available from: http://dx.doi.org/10.1007/s13538-018-0596-2
    • Vancouver

      Armas LEG, Zamarion V de M, Quispe LT, Otero EPU, Menezes JW, Zegarra LBR, Rahim A, Araki K, Toma HE, Jacinto C, Valsechi C, Seabra AC. Effect of gold nanoparticles and unwanted residues on raman spectra of graphene sheets [Internet]. Brazilian Journal of Physics. 2018 ; 48 477–484.Available from: http://dx.doi.org/10.1007/s13538-018-0596-2
  • Unidade: IF

    Subjects: EFEITO HALL, SEMICONDUTORES

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    • ABNT

      RAHIM, Abdur; GUSEV, Guennadii Michailovich. Efeito Hall de spin em nanoestruturas semicondutoras. 2015.Universidade de São Paulo, São Paulo, 2015. Disponível em: < http://www.teses.usp.br/teses/disponiveis/43/43134/tde-12072015-080251/pt-br.php >.
    • APA

      Rahim, A., & Gusev, G. M. (2015). Efeito Hall de spin em nanoestruturas semicondutoras. Universidade de São Paulo, São Paulo. Recuperado de http://www.teses.usp.br/teses/disponiveis/43/43134/tde-12072015-080251/pt-br.php
    • NLM

      Rahim A, Gusev GM. Efeito Hall de spin em nanoestruturas semicondutoras [Internet]. 2015 ;Available from: http://www.teses.usp.br/teses/disponiveis/43/43134/tde-12072015-080251/pt-br.php
    • Vancouver

      Rahim A, Gusev GM. Efeito Hall de spin em nanoestruturas semicondutoras [Internet]. 2015 ;Available from: http://www.teses.usp.br/teses/disponiveis/43/43134/tde-12072015-080251/pt-br.php
  • Source: SBF. Conference titles: Encontro Nacional de Física da Matéria Condensada. Unidade: IF

    Subjects: MATÉRIA CONDENSADA, TOPOLOGIA

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    • ABNT

      RAHIM, Abdur; KVON, Z. D.; OLSHANETSKY, E. B.; et al. Nonlinear transport near charge neutrality point in two-dimensional topological insulator. Anais.. São Paulo: [s.n.], 2014.Disponível em: .
    • APA

      Rahim, A., Kvon, Z. D., Olshanetsky, E. B., Mikhailov, N. N., Dvoretsky, S. A., Levin, A. D., & Gusev, G. (2014). Nonlinear transport near charge neutrality point in two-dimensional topological insulator. In SBF. São Paulo. Recuperado de http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxxvii/sys/resumos/R0545-1.pdf
    • NLM

      Rahim A, Kvon ZD, Olshanetsky EB, Mikhailov NN, Dvoretsky SA, Levin AD, Gusev G. Nonlinear transport near charge neutrality point in two-dimensional topological insulator [Internet]. SBF. 2014 ;Available from: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxxvii/sys/resumos/R0545-1.pdf
    • Vancouver

      Rahim A, Kvon ZD, Olshanetsky EB, Mikhailov NN, Dvoretsky SA, Levin AD, Gusev G. Nonlinear transport near charge neutrality point in two-dimensional topological insulator [Internet]. SBF. 2014 ;Available from: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxxvii/sys/resumos/R0545-1.pdf

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