ReP USP - Resultado da busca

Trabalho de evento-resumo
Tunable phase in the spin coherence generation of self-assembled (In,Ga)As quantum dots (2013)
Cordeiro, R C; Vargas, C B; Henriques, André Bohomoletz; Maia, A D B; Quivy, Alain Andre; Koenraad, P M; Bayer, M
Conference titles: Brazilian Workshop on Semiconductor Physics. Unidade: IF
Subjects: SEMICONDUTORES, MATERIAIS MAGNÉTICOS, POÇOS QUÂNTICOS
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ABNT
CORDEIRO, R C et al. Tunable phase in the spin coherence generation of self-assembled (In,Ga)As quantum dots. 2013, Anais.. São Carlos: UFSCar, 2013. Disponível em: http://www.bwsp16.ifsc.usp.br/index.php?option=com_abstract&view=viewabstract&absid=115. Acesso em: 16 abr. 2024.
APA
Cordeiro, R. C., Vargas, C. B., Henriques, A. B., Maia, A. D. B., Quivy, A. A., Koenraad, P. M., & Bayer, M. (2013). Tunable phase in the spin coherence generation of self-assembled (In,Ga)As quantum dots. In . São Carlos: UFSCar. Recuperado de http://www.bwsp16.ifsc.usp.br/index.php?option=com_abstract&view=viewabstract&absid=115
NLM
Cordeiro RC, Vargas CB, Henriques AB, Maia ADB, Quivy AA, Koenraad PM, Bayer M. Tunable phase in the spin coherence generation of self-assembled (In,Ga)As quantum dots [Internet]. 2013 ;[citado 2024 abr. 16 ] Available from: http://www.bwsp16.ifsc.usp.br/index.php?option=com_abstract&view=viewabstract&absid=115
Vancouver
Cordeiro RC, Vargas CB, Henriques AB, Maia ADB, Quivy AA, Koenraad PM, Bayer M. Tunable phase in the spin coherence generation of self-assembled (In,Ga)As quantum dots [Internet]. 2013 ;[citado 2024 abr. 16 ] Available from: http://www.bwsp16.ifsc.usp.br/index.php?option=com_abstract&view=viewabstract&absid=115
Artigo de periodico
Theoretical and experimental study of the excitonic binding energy in 'GA''AS'/'AL''GA''AS' single and coupled double quantum wells (2013)
Lopes, E. M.; Cesar, D. F.); Franchello, F.; Duarte, J. L.; Dias, I. F. L.; Laureto, E.; Elias, D. C.; Pereira, M. V. M.; Guimaraes, P. S. S.; Quivy, Alain Andre
Source: JOURNAL OF LUMINESCENCE. Unidade: IF
Subjects: CAMPO MAGNÉTICO, FOTOLUMINESCÊNCIA, MAGNETISMO
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ABNT
LOPES, E. M. et al. Theoretical and experimental study of the excitonic binding energy in 'GA''AS'/'AL''GA''AS' single and coupled double quantum wells. JOURNAL OF LUMINESCENCE, v. 144, p. 98-104, 2013Tradução . . Disponível em: http://www.sciencedirect.com/science/article/pii/S002223131300375X. Acesso em: 16 abr. 2024.
APA
Lopes, E. M., Cesar, D. F. ), Franchello, F., Duarte, J. L., Dias, I. F. L., Laureto, E., et al. (2013). Theoretical and experimental study of the excitonic binding energy in 'GA''AS'/'AL''GA''AS' single and coupled double quantum wells. JOURNAL OF LUMINESCENCE, 144, 98-104. Recuperado de http://www.sciencedirect.com/science/article/pii/S002223131300375X
NLM
Lopes EM, Cesar DF), Franchello F, Duarte JL, Dias IFL, Laureto E, Elias DC, Pereira MVM, Guimaraes PSS, Quivy AA. Theoretical and experimental study of the excitonic binding energy in 'GA''AS'/'AL''GA''AS' single and coupled double quantum wells [Internet]. JOURNAL OF LUMINESCENCE. 2013 ; 144 98-104.[citado 2024 abr. 16 ] Available from: http://www.sciencedirect.com/science/article/pii/S002223131300375X
Vancouver
Lopes EM, Cesar DF), Franchello F, Duarte JL, Dias IFL, Laureto E, Elias DC, Pereira MVM, Guimaraes PSS, Quivy AA. Theoretical and experimental study of the excitonic binding energy in 'GA''AS'/'AL''GA''AS' single and coupled double quantum wells [Internet]. JOURNAL OF LUMINESCENCE. 2013 ; 144 98-104.[citado 2024 abr. 16 ] Available from: http://www.sciencedirect.com/science/article/pii/S002223131300375X
Artigo de periodico
Study of the influence of indium segregation on the optical properties of InGaAs/GaAs quantum wells via split-operator method (2010)
Martini, S; Manzoli, J E; Quivy, Alain Andre
Source: Journal of Vacuum Science & Technology B. Unidade: IF
Assunto: FOTOLUMINESCÊNCIA
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ABNT
MARTINI, S e MANZOLI, J E e QUIVY, Alain Andre. Study of the influence of indium segregation on the optical properties of InGaAs/GaAs quantum wells via split-operator method. Journal of Vacuum Science & Technology B, v. 28, n. 2, 2010Tradução . . Disponível em: https://doi.org/10.1116/1.3301612. Acesso em: 16 abr. 2024.
APA
Martini, S., Manzoli, J. E., & Quivy, A. A. (2010). Study of the influence of indium segregation on the optical properties of InGaAs/GaAs quantum wells via split-operator method. Journal of Vacuum Science & Technology B, 28( 2). doi:10.1116/1.3301612
NLM
Martini S, Manzoli JE, Quivy AA. Study of the influence of indium segregation on the optical properties of InGaAs/GaAs quantum wells via split-operator method [Internet]. Journal of Vacuum Science & Technology B. 2010 ; 28( 2):[citado 2024 abr. 16 ] Available from: https://doi.org/10.1116/1.3301612
Vancouver
Martini S, Manzoli JE, Quivy AA. Study of the influence of indium segregation on the optical properties of InGaAs/GaAs quantum wells via split-operator method [Internet]. Journal of Vacuum Science & Technology B. 2010 ; 28( 2):[citado 2024 abr. 16 ] Available from: https://doi.org/10.1116/1.3301612
Artigo de periodico
Simulation of the electronic properties of 'IN' IND. x''GA' IND. 1−x' 'AS' quantum dots and their wetting layer under the influence of indium segregation (2013)
Maia, Álvaro Diego Bernardino; Aquino, V. M. de; Dias, I. F. L.; Silva, Euzi Conceição Fernandes da; Quivy, Alain Andre; Bindilatti, Valdir
Source: JOURNAL OF APPLIED PHYSICS. Unidade: IF
Subjects: FOTODETECTORES, ÁTOMOS
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ABNT
MAIA, Álvaro Diego Bernardino et al. Simulation of the electronic properties of 'IN' IND. x''GA' IND. 1−x' 'AS' quantum dots and their wetting layer under the influence of indium segregation. JOURNAL OF APPLIED PHYSICS, v. 114, n. 8, p. 083708, 2013Tradução . . Disponível em: https://repositorio.usp.br/directbitstream/431f6fc1-75d5-4f3e-b13e-0af926fa3796/1.4818610.pdf. Acesso em: 16 abr. 2024.
APA
Maia, Á. D. B., Aquino, V. M. de, Dias, I. F. L., Silva, E. C. F. da, Quivy, A. A., & Bindilatti, V. (2013). Simulation of the electronic properties of 'IN' IND. x''GA' IND. 1−x' 'AS' quantum dots and their wetting layer under the influence of indium segregation. JOURNAL OF APPLIED PHYSICS, 114( 8), 083708. Recuperado de https://repositorio.usp.br/directbitstream/431f6fc1-75d5-4f3e-b13e-0af926fa3796/1.4818610.pdf
NLM
Maia ÁDB, Aquino VM de, Dias IFL, Silva ECF da, Quivy AA, Bindilatti V. Simulation of the electronic properties of 'IN' IND. x''GA' IND. 1−x' 'AS' quantum dots and their wetting layer under the influence of indium segregation [Internet]. JOURNAL OF APPLIED PHYSICS. 2013 ; 114( 8): 083708.[citado 2024 abr. 16 ] Available from: https://repositorio.usp.br/directbitstream/431f6fc1-75d5-4f3e-b13e-0af926fa3796/1.4818610.pdf
Vancouver
Maia ÁDB, Aquino VM de, Dias IFL, Silva ECF da, Quivy AA, Bindilatti V. Simulation of the electronic properties of 'IN' IND. x''GA' IND. 1−x' 'AS' quantum dots and their wetting layer under the influence of indium segregation [Internet]. JOURNAL OF APPLIED PHYSICS. 2013 ; 114( 8): 083708.[citado 2024 abr. 16 ] Available from: https://repositorio.usp.br/directbitstream/431f6fc1-75d5-4f3e-b13e-0af926fa3796/1.4818610.pdf
Artigo de periodico
Simulation of the dark current of quantum-well infrared photodetectors (2017)
Claro, M. S.; Fernandes, F. M.; Silva, Euzi Conceicao Fernandes da; Quivy, Alain Andre
Source: Superlattices and Microstructures. Unidade: IF
Subjects: FOTODETECTORES, SEMICONDUTORES
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ABNT
CLARO, M. S. et al. Simulation of the dark current of quantum-well infrared photodetectors. Superlattices and Microstructures, v. 104, p. 232-239, 2017Tradução . . Disponível em: http://www.sciencedirect.com/science/article/pii/S0749603617300745?via%3Dihub. Acesso em: 16 abr. 2024.
APA
Claro, M. S., Fernandes, F. M., Silva, E. C. F. da, & Quivy, A. A. (2017). Simulation of the dark current of quantum-well infrared photodetectors. Superlattices and Microstructures, 104, 232-239. doi:10.1016/j.spmi.2017.02.015
NLM
Claro MS, Fernandes FM, Silva ECF da, Quivy AA. Simulation of the dark current of quantum-well infrared photodetectors [Internet]. Superlattices and Microstructures. 2017 ; 104 232-239.[citado 2024 abr. 16 ] Available from: http://www.sciencedirect.com/science/article/pii/S0749603617300745?via%3Dihub
Vancouver
Claro MS, Fernandes FM, Silva ECF da, Quivy AA. Simulation of the dark current of quantum-well infrared photodetectors [Internet]. Superlattices and Microstructures. 2017 ; 104 232-239.[citado 2024 abr. 16 ] Available from: http://www.sciencedirect.com/science/article/pii/S0749603617300745?via%3Dihub
Artigo de periodico
Modeling the 3D 'IN' profile of 'IN' IND. x''GA' IND. 1−x''AS'/'GA''AS' quantum dots (2016)
Tanaka, R. Y.; Abe, N. M.; Passaro, A.; Silva, Euzi Conceicao Fernandes da; Quivy, Alain Andre
Source: Journal of Physics D: Applied Physics. Unidade: IF
Subjects: MICROSCOPIA, ESTRUTURA ELETRÔNICA
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ABNT
TANAKA, R. Y. et al. Modeling the 3D 'IN' profile of 'IN' IND. x''GA' IND. 1−x''AS'/'GA''AS' quantum dots. Journal of Physics D: Applied Physics, v. 49, n. ju 2016, p. 215101, 2016Tradução . . Disponível em: http://iopscience.iop.org/article/10.1088/0022-3727/49/21/215101. Acesso em: 16 abr. 2024.
APA
Tanaka, R. Y., Abe, N. M., Passaro, A., Silva, E. C. F. da, & Quivy, A. A. (2016). Modeling the 3D 'IN' profile of 'IN' IND. x''GA' IND. 1−x''AS'/'GA''AS' quantum dots. Journal of Physics D: Applied Physics, 49( ju 2016), 215101. doi:10.1088/0022-3727/49/21/215101
NLM
Tanaka RY, Abe NM, Passaro A, Silva ECF da, Quivy AA. Modeling the 3D 'IN' profile of 'IN' IND. x''GA' IND. 1−x''AS'/'GA''AS' quantum dots [Internet]. Journal of Physics D: Applied Physics. 2016 ; 49( ju 2016): 215101.[citado 2024 abr. 16 ] Available from: http://iopscience.iop.org/article/10.1088/0022-3727/49/21/215101
Vancouver
Tanaka RY, Abe NM, Passaro A, Silva ECF da, Quivy AA. Modeling the 3D 'IN' profile of 'IN' IND. x''GA' IND. 1−x''AS'/'GA''AS' quantum dots [Internet]. Journal of Physics D: Applied Physics. 2016 ; 49( ju 2016): 215101.[citado 2024 abr. 16 ] Available from: http://iopscience.iop.org/article/10.1088/0022-3727/49/21/215101
Artigo de periodico
Modeling noise in superlattice quantum-well infrared photodetectors (2014)
Fernandes, Fernando Massa; Claro, Marcel Santos; Silva, Euzi Conceição Fernandes da; Quivy, Alain Andre
Source: JOURNAL OF PHYSICS D: APPLIED PHYSICS. Unidade: IF
Subjects: FOTODETECTORES, CAMPO ELETROMAGNÉTICO
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ABNT
FERNANDES, Fernando Massa et al. Modeling noise in superlattice quantum-well infrared photodetectors. JOURNAL OF PHYSICS D: APPLIED PHYSICS, v. 47, n. 38, p. 385105, 2014Tradução . . Disponível em: https://doi.org/10.1088/0022-3727/47/38/385105. Acesso em: 16 abr. 2024.
APA
Fernandes, F. M., Claro, M. S., Silva, E. C. F. da, & Quivy, A. A. (2014). Modeling noise in superlattice quantum-well infrared photodetectors. JOURNAL OF PHYSICS D: APPLIED PHYSICS, 47( 38), 385105. doi:10.1088/0022-3727/47/38/385105
NLM
Fernandes FM, Claro MS, Silva ECF da, Quivy AA. Modeling noise in superlattice quantum-well infrared photodetectors [Internet]. JOURNAL OF PHYSICS D: APPLIED PHYSICS. 2014 ; 47( 38): 385105.[citado 2024 abr. 16 ] Available from: https://doi.org/10.1088/0022-3727/47/38/385105
Vancouver
Fernandes FM, Claro MS, Silva ECF da, Quivy AA. Modeling noise in superlattice quantum-well infrared photodetectors [Internet]. JOURNAL OF PHYSICS D: APPLIED PHYSICS. 2014 ; 47( 38): 385105.[citado 2024 abr. 16 ] Available from: https://doi.org/10.1088/0022-3727/47/38/385105
Artigo de periodico
Maximization of the InAs quantum-dot density through the growth of an intentionally non-homogeneous sample (2002)
Silva, M J; Quivy, Alain Andre; González-Borrero, Pedro Pablo; Marega Júnior, Euclydes
Source: Journal of Crystal Growth. Unidades: IF, IFSC
Assunto: SEMICONDUTORES (FÍSICO-QUÍMICA)
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ABNT
SILVA, M J et al. Maximization of the InAs quantum-dot density through the growth of an intentionally non-homogeneous sample. Journal of Crystal Growth, v. 236, n. 1-3, p. 41-45, 2002Tradução . . Disponível em: https://doi.org/10.1016/s0022-0248(01)02109-1. Acesso em: 16 abr. 2024.
APA
Silva, M. J., Quivy, A. A., González-Borrero, P. P., & Marega Júnior, E. (2002). Maximization of the InAs quantum-dot density through the growth of an intentionally non-homogeneous sample. Journal of Crystal Growth, 236( 1-3), 41-45. doi:10.1016/s0022-0248(01)02109-1
NLM
Silva MJ, Quivy AA, González-Borrero PP, Marega Júnior E. Maximization of the InAs quantum-dot density through the growth of an intentionally non-homogeneous sample [Internet]. Journal of Crystal Growth. 2002 ;236( 1-3): 41-45.[citado 2024 abr. 16 ] Available from: https://doi.org/10.1016/s0022-0248(01)02109-1
Vancouver
Silva MJ, Quivy AA, González-Borrero PP, Marega Júnior E. Maximization of the InAs quantum-dot density through the growth of an intentionally non-homogeneous sample [Internet]. Journal of Crystal Growth. 2002 ;236( 1-3): 41-45.[citado 2024 abr. 16 ] Available from: https://doi.org/10.1016/s0022-0248(01)02109-1
Trabalho de evento-resumo
Infrared photodetectors based on submonolayer quantum dots (2016)
Alzeidan, Ahmad; Claro, Marcel Santos; Quivy, Alain Andre
Source: Posters - Resumo. Conference titles: Encontro de Física. Unidade: IF
Subjects: FÍSICA DA MATÉRIA CONDENSADA, FOTODETECTORES, POÇOS QUÂNTICOS
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ABNT
ALZEIDAN, Ahmad e CLARO, Marcel Santos e QUIVY, Alain Andre. Infrared photodetectors based on submonolayer quantum dots. 2016, Anais.. São Paulo: SBF, 2016. Disponível em: http://www1.sbfisica.org.br/eventos/enf/2016/sys/resumos/R1690-1.pdf. Acesso em: 16 abr. 2024.
APA
Alzeidan, A., Claro, M. S., & Quivy, A. A. (2016). Infrared photodetectors based on submonolayer quantum dots. In Posters - Resumo. São Paulo: SBF. Recuperado de http://www1.sbfisica.org.br/eventos/enf/2016/sys/resumos/R1690-1.pdf
NLM
Alzeidan A, Claro MS, Quivy AA. Infrared photodetectors based on submonolayer quantum dots [Internet]. Posters - Resumo. 2016 ;[citado 2024 abr. 16 ] Available from: http://www1.sbfisica.org.br/eventos/enf/2016/sys/resumos/R1690-1.pdf
Vancouver
Alzeidan A, Claro MS, Quivy AA. Infrared photodetectors based on submonolayer quantum dots [Internet]. Posters - Resumo. 2016 ;[citado 2024 abr. 16 ] Available from: http://www1.sbfisica.org.br/eventos/enf/2016/sys/resumos/R1690-1.pdf
Artigo de periodico
Influence of bimodal distribution and excited state emission on photoluminescence spectra of 'IN''AS' self-assembled quantum dots (2013)
Franchello, Flavio; Souza, Leonardo D. de; Laureto, Edson; Dias, Ivan F. L.; Duarte, Jose L.; Quivy, Alain Andre
Source: JOURNAL OF LUMINESCENCE. Unidade: IF
Subjects: LUMINESCÊNCIA, LASER
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ABNT
FRANCHELLO, Flavio et al. Influence of bimodal distribution and excited state emission on photoluminescence spectra of 'IN''AS' self-assembled quantum dots. JOURNAL OF LUMINESCENCE, v. 137, p. 22-27, 2013Tradução . . Disponível em: https://doi.org/10.1016/j.jlumin.2012.12.062. Acesso em: 16 abr. 2024.
APA
Franchello, F., Souza, L. D. de, Laureto, E., Dias, I. F. L., Duarte, J. L., & Quivy, A. A. (2013). Influence of bimodal distribution and excited state emission on photoluminescence spectra of 'IN''AS' self-assembled quantum dots. JOURNAL OF LUMINESCENCE, 137, 22-27. doi:10.1016/j.jlumin.2012.12.062
NLM
Franchello F, Souza LD de, Laureto E, Dias IFL, Duarte JL, Quivy AA. Influence of bimodal distribution and excited state emission on photoluminescence spectra of 'IN''AS' self-assembled quantum dots [Internet]. JOURNAL OF LUMINESCENCE. 2013 ; 137 22-27.[citado 2024 abr. 16 ] Available from: https://doi.org/10.1016/j.jlumin.2012.12.062
Vancouver
Franchello F, Souza LD de, Laureto E, Dias IFL, Duarte JL, Quivy AA. Influence of bimodal distribution and excited state emission on photoluminescence spectra of 'IN''AS' self-assembled quantum dots [Internet]. JOURNAL OF LUMINESCENCE. 2013 ; 137 22-27.[citado 2024 abr. 16 ] Available from: https://doi.org/10.1016/j.jlumin.2012.12.062
Dissertação (Mestrado)
Fotodetectores de radiação infravermelha baseados em pontos quânticos de submonocamada (2017)
Al-Zeidan, Ahmad; Quivy, Alain Andre (Orientador)
Unidade: IF
Subjects: EPITAXIA POR FEIXE MOLECULAR, FOTODETECTORES, INFRAVERMELHO
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ABNT
AL-ZEIDAN, Ahmad. Fotodetectores de radiação infravermelha baseados em pontos quânticos de submonocamada. 2017. Dissertação (Mestrado) – Universidade de São Paulo, São Paulo, 2017. Disponível em: http://www.teses.usp.br/teses/disponiveis/43/43134/tde-10082018-145516/. Acesso em: 16 abr. 2024.
APA
Al-Zeidan, A. (2017). Fotodetectores de radiação infravermelha baseados em pontos quânticos de submonocamada (Dissertação (Mestrado). Universidade de São Paulo, São Paulo. Recuperado de http://www.teses.usp.br/teses/disponiveis/43/43134/tde-10082018-145516/
NLM
Al-Zeidan A. Fotodetectores de radiação infravermelha baseados em pontos quânticos de submonocamada [Internet]. 2017 ;[citado 2024 abr. 16 ] Available from: http://www.teses.usp.br/teses/disponiveis/43/43134/tde-10082018-145516/
Vancouver
Al-Zeidan A. Fotodetectores de radiação infravermelha baseados em pontos quânticos de submonocamada [Internet]. 2017 ;[citado 2024 abr. 16 ] Available from: http://www.teses.usp.br/teses/disponiveis/43/43134/tde-10082018-145516/
Artigo de periodico
Exciton behavior in GaAs/AlGaAs coupled double quantum wells with interface disorder (2010)
Lopes, E M; Duarte, J L; Poças, L C; Dias, I. F. L; Laureto, E; Quivy, Alain Andre; Lamas, Tomas Eriksson
Source: JournalofLuminescence. Unidade: IF
Assunto: FOTOLUMINESCÊNCIA
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ABNT
LOPES, E M et al. Exciton behavior in GaAs/AlGaAs coupled double quantum wells with interface disorder. JournalofLuminescence, v. 130, n. 3, 2010Tradução . . Disponível em: https://doi.org/10.1016/j.jlumin.2009.10.013. Acesso em: 16 abr. 2024.
APA
Lopes, E. M., Duarte, J. L., Poças, L. C., Dias, I. F. L., Laureto, E., Quivy, A. A., & Lamas, T. E. (2010). Exciton behavior in GaAs/AlGaAs coupled double quantum wells with interface disorder. JournalofLuminescence, 130( 3). doi:10.1016/j.jlumin.2009.10.013
NLM
Lopes EM, Duarte JL, Poças LC, Dias IFL, Laureto E, Quivy AA, Lamas TE. Exciton behavior in GaAs/AlGaAs coupled double quantum wells with interface disorder [Internet]. JournalofLuminescence. 2010 ;130( 3):[citado 2024 abr. 16 ] Available from: https://doi.org/10.1016/j.jlumin.2009.10.013
Vancouver
Lopes EM, Duarte JL, Poças LC, Dias IFL, Laureto E, Quivy AA, Lamas TE. Exciton behavior in GaAs/AlGaAs coupled double quantum wells with interface disorder [Internet]. JournalofLuminescence. 2010 ;130( 3):[citado 2024 abr. 16 ] Available from: https://doi.org/10.1016/j.jlumin.2009.10.013
Artigo de periodico
Efficient method for calculating electronic bound states in arbitrary one-dimensional quantum wells (2017)
Aquino, V M de; Iwamoto, H; Dias, I F L; Laureto, E; Silva, M A T da; Silva, Euzi Conceicao Fernandes da; Quivy, Alain Andre
Source: Superlattices and Microstructures. Unidade: IF
Subjects: POÇOS QUÂNTICOS, FOTODETECTORES, ELETRÔNICA QUÂNTICA
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ABNT
AQUINO, V M de et al. Efficient method for calculating electronic bound states in arbitrary one-dimensional quantum wells. Superlattices and Microstructures, v. 101, n. ja, p. 236-243, 2017Tradução . . Disponível em: https://doi.org/10.1016/j.spmi.2016.11.042. Acesso em: 16 abr. 2024.
APA
Aquino, V. M. de, Iwamoto, H., Dias, I. F. L., Laureto, E., Silva, M. A. T. da, Silva, E. C. F. da, & Quivy, A. A. (2017). Efficient method for calculating electronic bound states in arbitrary one-dimensional quantum wells. Superlattices and Microstructures, 101( ja), 236-243. doi:10.1016/j.spmi.2016.11.042
NLM
Aquino VM de, Iwamoto H, Dias IFL, Laureto E, Silva MAT da, Silva ECF da, Quivy AA. Efficient method for calculating electronic bound states in arbitrary one-dimensional quantum wells [Internet]. Superlattices and Microstructures. 2017 ; 101( ja): 236-243.[citado 2024 abr. 16 ] Available from: https://doi.org/10.1016/j.spmi.2016.11.042
Vancouver
Aquino VM de, Iwamoto H, Dias IFL, Laureto E, Silva MAT da, Silva ECF da, Quivy AA. Efficient method for calculating electronic bound states in arbitrary one-dimensional quantum wells [Internet]. Superlattices and Microstructures. 2017 ; 101( ja): 236-243.[citado 2024 abr. 16 ] Available from: https://doi.org/10.1016/j.spmi.2016.11.042
Artigo de periodico
Computation of dark current in QWIPs using a modelling based on ehrenfest theorem (2015)
Pedroso, D. M.; Passaro, A.; Dacal, L. C. O.; Vieira, G. S.; Silva, Euzi Conceição Fernandes da; Quivy, Alain Andre
Source: JOURNAL OF PHYSICS D: APPLIED PHYSICS. Unidade: IF
Subjects: FOTODETECTORES, SEMICONDUTORES
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ABNT
PEDROSO, D. M. et al. Computation of dark current in QWIPs using a modelling based on ehrenfest theorem. JOURNAL OF PHYSICS D: APPLIED PHYSICS, v. 48, n. 36, p. se 2015, 2015Tradução . . Disponível em: https://doi.org/10.1088/0022-3727/48/36/365102. Acesso em: 16 abr. 2024.
APA
Pedroso, D. M., Passaro, A., Dacal, L. C. O., Vieira, G. S., Silva, E. C. F. da, & Quivy, A. A. (2015). Computation of dark current in QWIPs using a modelling based on ehrenfest theorem. JOURNAL OF PHYSICS D: APPLIED PHYSICS, 48( 36), se 2015. doi:10.1088/0022-3727/48/36/365102
NLM
Pedroso DM, Passaro A, Dacal LCO, Vieira GS, Silva ECF da, Quivy AA. Computation of dark current in QWIPs using a modelling based on ehrenfest theorem [Internet]. JOURNAL OF PHYSICS D: APPLIED PHYSICS. 2015 ; 48( 36): se 2015.[citado 2024 abr. 16 ] Available from: https://doi.org/10.1088/0022-3727/48/36/365102
Vancouver
Pedroso DM, Passaro A, Dacal LCO, Vieira GS, Silva ECF da, Quivy AA. Computation of dark current in QWIPs using a modelling based on ehrenfest theorem [Internet]. JOURNAL OF PHYSICS D: APPLIED PHYSICS. 2015 ; 48( 36): se 2015.[citado 2024 abr. 16 ] Available from: https://doi.org/10.1088/0022-3727/48/36/365102
Artigo de periodico
Atomic-force microscopy study of self-assembled InAs quantum dots along their complete evolution cycle (2002)
Silva, M. J. da; Quivy, Alain Andre; González-Borrero, P. P.; Marega Júnior, Euclydes; Leite, J. R.
Source: Journal of Crystal Growth. Unidades: IF, IFSC
Assunto: SEMICONDUTORES (FÍSICO-QUÍMICA)
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SILVA, M. J. da et al. Atomic-force microscopy study of self-assembled InAs quantum dots along their complete evolution cycle. Journal of Crystal Growth, v. 241, n. 1-2, p. 19-30, 2002Tradução . . Disponível em: https://doi.org/10.1016/s0022-0248(02)00947-8. Acesso em: 16 abr. 2024.
APA
Silva, M. J. da, Quivy, A. A., González-Borrero, P. P., Marega Júnior, E., & Leite, J. R. (2002). Atomic-force microscopy study of self-assembled InAs quantum dots along their complete evolution cycle. Journal of Crystal Growth, 241( 1-2), 19-30. doi:10.1016/s0022-0248(02)00947-8
NLM
Silva MJ da, Quivy AA, González-Borrero PP, Marega Júnior E, Leite JR. Atomic-force microscopy study of self-assembled InAs quantum dots along their complete evolution cycle [Internet]. Journal of Crystal Growth. 2002 ;241( 1-2): 19-30.[citado 2024 abr. 16 ] Available from: https://doi.org/10.1016/s0022-0248(02)00947-8
Vancouver
Silva MJ da, Quivy AA, González-Borrero PP, Marega Júnior E, Leite JR. Atomic-force microscopy study of self-assembled InAs quantum dots along their complete evolution cycle [Internet]. Journal of Crystal Growth. 2002 ;241( 1-2): 19-30.[citado 2024 abr. 16 ] Available from: https://doi.org/10.1016/s0022-0248(02)00947-8

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