Subjects: SPINTRÔNICA, SEMICONDUTORES
ABNT
LUCATTO, Bruno et al. A general procedure for accurate defect excitation energies from DFT-1/2 band structures: the case of 'NV POT. -' center in diamond. . São Paulo: Instituto de Física, Universidade de São Paulo. Disponível em: https://arxiv.org/abs/1705.10644. Acesso em: 25 mar. 2023. , 2017APA
Lucatto, B., Pela, R. R., Marques, M., Teles, L. K., & Assali, L. V. C. (2017). A general procedure for accurate defect excitation energies from DFT-1/2 band structures: the case of 'NV POT. -' center in diamond. São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de https://arxiv.org/abs/1705.10644NLM
Lucatto B, Pela RR, Marques M, Teles LK, Assali LVC. A general procedure for accurate defect excitation energies from DFT-1/2 band structures: the case of 'NV POT. -' center in diamond [Internet]. 2017 ;[citado 2023 mar. 25 ] Available from: https://arxiv.org/abs/1705.10644Vancouver
Lucatto B, Pela RR, Marques M, Teles LK, Assali LVC. A general procedure for accurate defect excitation energies from DFT-1/2 band structures: the case of 'NV POT. -' center in diamond [Internet]. 2017 ;[citado 2023 mar. 25 ] Available from: https://arxiv.org/abs/1705.10644