Improved operation of graded-channel SOI nMOSFETs down to liquid helium temperature (2016)
Source: Semiconductor Science and Technology. Unidade: EP
Subjects: SILÍCIO, SEMICONDUTORES
ABNT
PAVANELLO, Marcelo Antonio; SOUZA, Michelly de; RIBEIRO, Thales Augusto; MARTINO, João Antonio; FLANDRE, Denis. Improved operation of graded-channel SOI nMOSFETs down to liquid helium temperature. Semiconductor Science and Technology[S.l.], v. 31, n. 11, p. 114005, 2016. Disponível em: < https://doi.org/10.1088/0268-1242/31/11/114005 > DOI: 10.1088/0268-1242/31/11/114005.APA
Pavanello, M. A., Souza, M. de, Ribeiro, T. A., Martino, J. A., & Flandre, D. (2016). Improved operation of graded-channel SOI nMOSFETs down to liquid helium temperature. Semiconductor Science and Technology, 31( 11), 114005. doi:10.1088/0268-1242/31/11/114005NLM
Pavanello MA, Souza M de, Ribeiro TA, Martino JA, Flandre D. Improved operation of graded-channel SOI nMOSFETs down to liquid helium temperature [Internet]. Semiconductor Science and Technology. 2016 ; 31( 11): 114005.Available from: https://doi.org/10.1088/0268-1242/31/11/114005Vancouver
Pavanello MA, Souza M de, Ribeiro TA, Martino JA, Flandre D. Improved operation of graded-channel SOI nMOSFETs down to liquid helium temperature [Internet]. Semiconductor Science and Technology. 2016 ; 31( 11): 114005.Available from: https://doi.org/10.1088/0268-1242/31/11/114005