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Dissertação (Mestrado)
Caracterização Elétrica de dispositivos SOI MOSFET fabricados com tecnologia sub-micrométrica (2006)
Paiola, Artur Gasparetto; Nicolett, Aparecido Sirley (Orientador)
Unidade: EP
Subjects: SEMICONDUTORES, TRANSISTORES, MICROELETRÔNICA
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ABNT
PAIOLA, Artur Gasparetto. Caracterização Elétrica de dispositivos SOI MOSFET fabricados com tecnologia sub-micrométrica. 2006. Dissertação (Mestrado) – Universidade de São Paulo, São Paulo, 2006. . Acesso em: 24 jan. 2026.
APA
Paiola, A. G. (2006). Caracterização Elétrica de dispositivos SOI MOSFET fabricados com tecnologia sub-micrométrica (Dissertação (Mestrado). Universidade de São Paulo, São Paulo.
NLM
Paiola AG. Caracterização Elétrica de dispositivos SOI MOSFET fabricados com tecnologia sub-micrométrica. 2006 ;[citado 2026 jan. 24 ]
Vancouver
Paiola AG. Caracterização Elétrica de dispositivos SOI MOSFET fabricados com tecnologia sub-micrométrica. 2006 ;[citado 2026 jan. 24 ]
Trabalho de evento
Influence of the gate oxide tunneling effect on the extraction of the silicon film and front oxide thickness in SOI nMOSFET (2005)
Paiola, A.G.; Nicolett, Aparecido Sirley; Martino, João Antonio
Source: Microelectronics Technology and Devices SBMICRO 2005. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
PAIOLA, A.G. e NICOLETT, Aparecido Sirley e MARTINO, João Antonio. Influence of the gate oxide tunneling effect on the extraction of the silicon film and front oxide thickness in SOI nMOSFET. 2005, Anais.. Pennington: The Electrochemical Society, 2005. . Acesso em: 24 jan. 2026.
APA
Paiola, A. G., Nicolett, A. S., & Martino, J. A. (2005). Influence of the gate oxide tunneling effect on the extraction of the silicon film and front oxide thickness in SOI nMOSFET. In Microelectronics Technology and Devices SBMICRO 2005. Pennington: The Electrochemical Society.
NLM
Paiola AG, Nicolett AS, Martino JA. Influence of the gate oxide tunneling effect on the extraction of the silicon film and front oxide thickness in SOI nMOSFET. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2026 jan. 24 ]
Vancouver
Paiola AG, Nicolett AS, Martino JA. Influence of the gate oxide tunneling effect on the extraction of the silicon film and front oxide thickness in SOI nMOSFET. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2026 jan. 24 ]
Parte de monografia/livro
Determination of the silicon film thickness and back oxide charge density on graded-channel SOI nMOSFETs (2003)
Nicolett, Aparecido Sirley; Martino, João Antonio ; Pavanello, Marcelo Antonio
Source: Microelectronic Technology and Devices SBMicro 2003. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
NICOLETT, Aparecido Sirley e MARTINO, João Antonio e PAVANELLO, Marcelo Antonio. Determination of the silicon film thickness and back oxide charge density on graded-channel SOI nMOSFETs. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 24 jan. 2026.
APA
Nicolett, A. S., Martino, J. A., & Pavanello, M. A. (2003). Determination of the silicon film thickness and back oxide charge density on graded-channel SOI nMOSFETs. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society.
NLM
Nicolett AS, Martino JA, Pavanello MA. Determination of the silicon film thickness and back oxide charge density on graded-channel SOI nMOSFETs. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2026 jan. 24 ]
Vancouver
Nicolett AS, Martino JA, Pavanello MA. Determination of the silicon film thickness and back oxide charge density on graded-channel SOI nMOSFETs. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2026 jan. 24 ]
Parte de monografia/livro
Study of series resistance and effective channel length behavior comparing graded-channel and conventional SOI nMOSFETs (2003)
Almeida, Galba Falce de; Nicolett, Aparecido Sirley; Martino, João Antonio
Source: Microelectronic Technology and Devices SBMicro 2003. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
ALMEIDA, Galba Falce de e NICOLETT, Aparecido Sirley e MARTINO, João Antonio. Study of series resistance and effective channel length behavior comparing graded-channel and conventional SOI nMOSFETs. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 24 jan. 2026.
APA
Almeida, G. F. de, Nicolett, A. S., & Martino, J. A. (2003). Study of series resistance and effective channel length behavior comparing graded-channel and conventional SOI nMOSFETs. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society.
NLM
Almeida GF de, Nicolett AS, Martino JA. Study of series resistance and effective channel length behavior comparing graded-channel and conventional SOI nMOSFETs. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2026 jan. 24 ]
Vancouver
Almeida GF de, Nicolett AS, Martino JA. Study of series resistance and effective channel length behavior comparing graded-channel and conventional SOI nMOSFETs. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2026 jan. 24 ]
Artigo de periodico
Extraction of the oxide charge density at front and back interfaces of SOI nMOSFETs devices (2002)
Nicolett, Aparecido Sirley; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor
Source: Solid-State Electronics. Unidade: EP
Assunto: FILMES FINOS
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ABNT
NICOLETT, Aparecido Sirley et al. Extraction of the oxide charge density at front and back interfaces of SOI nMOSFETs devices. Solid-State Electronics, n. 9, p. 1381-1387, 2002Tradução . . Disponível em: https://doi.org/10.1016/s0038-1101(02)00067-9. Acesso em: 24 jan. 2026.
APA
Nicolett, A. S., Martino, J. A., Simoen, E., & Claeys, C. (2002). Extraction of the oxide charge density at front and back interfaces of SOI nMOSFETs devices. Solid-State Electronics, ( 9), 1381-1387. doi:10.1016/s0038-1101(02)00067-9
NLM
Nicolett AS, Martino JA, Simoen E, Claeys C. Extraction of the oxide charge density at front and back interfaces of SOI nMOSFETs devices [Internet]. Solid-State Electronics. 2002 ;( 9): 1381-1387.[citado 2026 jan. 24 ] Available from: https://doi.org/10.1016/s0038-1101(02)00067-9
Vancouver
Nicolett AS, Martino JA, Simoen E, Claeys C. Extraction of the oxide charge density at front and back interfaces of SOI nMOSFETs devices [Internet]. Solid-State Electronics. 2002 ;( 9): 1381-1387.[citado 2026 jan. 24 ] Available from: https://doi.org/10.1016/s0038-1101(02)00067-9
Parte de monografia/livro
The influence of the interface trap densities on the extraction of the silicon film and front oxide thickness of SOI NMOS devices at low temperatures (2002)
Nicolett, Aparecido Sirley; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor
Source: Microelectronics Technology and Devices SBMICRO 2002. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
NICOLETT, Aparecido Sirley et al. The influence of the interface trap densities on the extraction of the silicon film and front oxide thickness of SOI NMOS devices at low temperatures. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 24 jan. 2026.
APA
Nicolett, A. S., Martino, J. A., Simoen, E., & Claeys, C. (2002). The influence of the interface trap densities on the extraction of the silicon film and front oxide thickness of SOI NMOS devices at low temperatures. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Nicolett AS, Martino JA, Simoen E, Claeys C. The influence of the interface trap densities on the extraction of the silicon film and front oxide thickness of SOI NMOS devices at low temperatures. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2026 jan. 24 ]
Vancouver
Nicolett AS, Martino JA, Simoen E, Claeys C. The influence of the interface trap densities on the extraction of the silicon film and front oxide thickness of SOI NMOS devices at low temperatures. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2026 jan. 24 ]
Parte de monografia/livro
Influence of the back gate voltage on the total series resistance of fully depleted SOI MOSFETs at 300 K and 77 K (2002)
Nicolett, Aparecido Sirley; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor
Source: Microelectronics Technology and Devices SBMICRO 2002. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
NICOLETT, Aparecido Sirley et al. Influence of the back gate voltage on the total series resistance of fully depleted SOI MOSFETs at 300 K and 77 K. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 24 jan. 2026.
APA
Nicolett, A. S., Martino, J. A., Simoen, E., & Claeys, C. (2002). Influence of the back gate voltage on the total series resistance of fully depleted SOI MOSFETs at 300 K and 77 K. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Nicolett AS, Martino JA, Simoen E, Claeys C. Influence of the back gate voltage on the total series resistance of fully depleted SOI MOSFETs at 300 K and 77 K. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2026 jan. 24 ]
Vancouver
Nicolett AS, Martino JA, Simoen E, Claeys C. Influence of the back gate voltage on the total series resistance of fully depleted SOI MOSFETs at 300 K and 77 K. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2026 jan. 24 ]
Artigo de periodico
A new technique to extract the oxide charge density at front and back interfaces of SOI nMOSFETs devices (2002)
Nicolett, Aparecido Sirley; Martino, João Antonio
Source: Boletim Técnico da Escola Politécnica da USP. Departamento de Engenharia de Sistemas Eletrônicos. Unidade: EP
Assunto: FILMES FINOS
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ABNT
NICOLETT, Aparecido Sirley e MARTINO, João Antonio. A new technique to extract the oxide charge density at front and back interfaces of SOI nMOSFETs devices. Boletim Técnico da Escola Politécnica da USP. Departamento de Engenharia de Sistemas Eletrônicos, n. 10, 2002Tradução . . Acesso em: 24 jan. 2026.
APA
Nicolett, A. S., & Martino, J. A. (2002). A new technique to extract the oxide charge density at front and back interfaces of SOI nMOSFETs devices. Boletim Técnico da Escola Politécnica da USP. Departamento de Engenharia de Sistemas Eletrônicos, (10).
NLM
Nicolett AS, Martino JA. A new technique to extract the oxide charge density at front and back interfaces of SOI nMOSFETs devices. Boletim Técnico da Escola Politécnica da USP. Departamento de Engenharia de Sistemas Eletrônicos. 2002 ;(10):[citado 2026 jan. 24 ]
Vancouver
Nicolett AS, Martino JA. A new technique to extract the oxide charge density at front and back interfaces of SOI nMOSFETs devices. Boletim Técnico da Escola Politécnica da USP. Departamento de Engenharia de Sistemas Eletrônicos. 2002 ;(10):[citado 2026 jan. 24 ]
Trabalho de evento
A new technique to extract the oxide charge density at front and back interfaces of SOI nMOSFETs devices (2001)
Nicolett, Aparecido Sirley; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor
Source: SBMicro 2001: proceedings. Conference titles: International Conference on Microelectronics and Packaging. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
NICOLETT, Aparecido Sirley et al. A new technique to extract the oxide charge density at front and back interfaces of SOI nMOSFETs devices. 2001, Anais.. Brasília: SBMicro, 2001. . Acesso em: 24 jan. 2026.
APA
Nicolett, A. S., Martino, J. A., Simoen, E., & Claeys, C. (2001). A new technique to extract the oxide charge density at front and back interfaces of SOI nMOSFETs devices. In SBMicro 2001: proceedings. Brasília: SBMicro.
NLM
Nicolett AS, Martino JA, Simoen E, Claeys C. A new technique to extract the oxide charge density at front and back interfaces of SOI nMOSFETs devices. SBMicro 2001: proceedings. 2001 ;[citado 2026 jan. 24 ]
Vancouver
Nicolett AS, Martino JA, Simoen E, Claeys C. A new technique to extract the oxide charge density at front and back interfaces of SOI nMOSFETs devices. SBMicro 2001: proceedings. 2001 ;[citado 2026 jan. 24 ]
Trabalho de evento
Extraction of the oxide charge density at front and back interfaces of SOI NMOSFET devices (2001)
Nicolett, Aparecido Sirley; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor
Source: Proceedings. Conference titles: International Symposium on Silicon-on-Insulator Technology and Devices. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
NICOLETT, Aparecido Sirley et al. Extraction of the oxide charge density at front and back interfaces of SOI NMOSFET devices. 2001, Anais.. Pennington: The Electrochemical Society, 2001. . Acesso em: 24 jan. 2026.
APA
Nicolett, A. S., Martino, J. A., Simoen, E., & Claeys, C. (2001). Extraction of the oxide charge density at front and back interfaces of SOI NMOSFET devices. In Proceedings. Pennington: The Electrochemical Society.
NLM
Nicolett AS, Martino JA, Simoen E, Claeys C. Extraction of the oxide charge density at front and back interfaces of SOI NMOSFET devices. Proceedings. 2001 ;[citado 2026 jan. 24 ]
Vancouver
Nicolett AS, Martino JA, Simoen E, Claeys C. Extraction of the oxide charge density at front and back interfaces of SOI NMOSFET devices. Proceedings. 2001 ;[citado 2026 jan. 24 ]
Tese (Doutorado)
Estudo do comportamento da resistência série e desenvolvimento de novos métodos de caracterização elétrica em dispositivos SOI MOSFET (2001)
Nicolett, Aparecido Sirley; Martino, João Antonio (Orientador)
Unidade: EP
Assunto: ENGENHARIA ELÉTRICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
NICOLETT, Aparecido Sirley. Estudo do comportamento da resistência série e desenvolvimento de novos métodos de caracterização elétrica em dispositivos SOI MOSFET. 2001. Tese (Doutorado) – Universidade de São Paulo, São Paulo, 2001. Disponível em: https://www.teses.usp.br/teses/disponiveis/3/3140/tde-12112024-155429/pt-br.php. Acesso em: 24 jan. 2026.
APA
Nicolett, A. S. (2001). Estudo do comportamento da resistência série e desenvolvimento de novos métodos de caracterização elétrica em dispositivos SOI MOSFET (Tese (Doutorado). Universidade de São Paulo, São Paulo. Recuperado de https://www.teses.usp.br/teses/disponiveis/3/3140/tde-12112024-155429/pt-br.php
NLM
Nicolett AS. Estudo do comportamento da resistência série e desenvolvimento de novos métodos de caracterização elétrica em dispositivos SOI MOSFET [Internet]. 2001 ;[citado 2026 jan. 24 ] Available from: https://www.teses.usp.br/teses/disponiveis/3/3140/tde-12112024-155429/pt-br.php
Vancouver
Nicolett AS. Estudo do comportamento da resistência série e desenvolvimento de novos métodos de caracterização elétrica em dispositivos SOI MOSFET [Internet]. 2001 ;[citado 2026 jan. 24 ] Available from: https://www.teses.usp.br/teses/disponiveis/3/3140/tde-12112024-155429/pt-br.php
Trabalho de evento
Effective channel length and series resistence extraction error induced by the substrate in enhancement-mode SOI nMOSFETs (2000)
Pavanello, Marcelo Antonio ; Nicolett, Aparecido Sirley; Martino, João Antonio
Source: LATW 00: proceedings. Conference titles: IEEE Latin American Test Workshop. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PAVANELLO, Marcelo Antonio e NICOLETT, Aparecido Sirley e MARTINO, João Antonio. Effective channel length and series resistence extraction error induced by the substrate in enhancement-mode SOI nMOSFETs. 2000, Anais.. Piscataway: IEEE/SBC, 2000. . Acesso em: 24 jan. 2026.
APA
Pavanello, M. A., Nicolett, A. S., & Martino, J. A. (2000). Effective channel length and series resistence extraction error induced by the substrate in enhancement-mode SOI nMOSFETs. In LATW 00: proceedings. Piscataway: IEEE/SBC.
NLM
Pavanello MA, Nicolett AS, Martino JA. Effective channel length and series resistence extraction error induced by the substrate in enhancement-mode SOI nMOSFETs. LATW 00: proceedings. 2000 ;[citado 2026 jan. 24 ]
Vancouver
Pavanello MA, Nicolett AS, Martino JA. Effective channel length and series resistence extraction error induced by the substrate in enhancement-mode SOI nMOSFETs. LATW 00: proceedings. 2000 ;[citado 2026 jan. 24 ]
Artigo de periodico
Simultaneous extraction of the silicon film and front oxide thicknesses on fully depleted SOI nMOSFETs (2000)
Nicolett, Aparecido Sirley; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor
Source: Solid-State Electronics. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
NICOLETT, Aparecido Sirley et al. Simultaneous extraction of the silicon film and front oxide thicknesses on fully depleted SOI nMOSFETs. Solid-State Electronics, v. No 2000, n. 11, p. 1961-1969, 2000Tradução . . Disponível em: https://doi.org/10.1016/s0038-1101(00)00166-0. Acesso em: 24 jan. 2026.
APA
Nicolett, A. S., Martino, J. A., Simoen, E., & Claeys, C. (2000). Simultaneous extraction of the silicon film and front oxide thicknesses on fully depleted SOI nMOSFETs. Solid-State Electronics, No 2000( 11), 1961-1969. doi:10.1016/s0038-1101(00)00166-0
NLM
Nicolett AS, Martino JA, Simoen E, Claeys C. Simultaneous extraction of the silicon film and front oxide thicknesses on fully depleted SOI nMOSFETs [Internet]. Solid-State Electronics. 2000 ; No 2000( 11): 1961-1969.[citado 2026 jan. 24 ] Available from: https://doi.org/10.1016/s0038-1101(00)00166-0
Vancouver
Nicolett AS, Martino JA, Simoen E, Claeys C. Simultaneous extraction of the silicon film and front oxide thicknesses on fully depleted SOI nMOSFETs [Internet]. Solid-State Electronics. 2000 ; No 2000( 11): 1961-1969.[citado 2026 jan. 24 ] Available from: https://doi.org/10.1016/s0038-1101(00)00166-0
Trabalho de evento
A new method to extract the silicon film thickness of enhancement mode fully depleted SOI nMOSFETs (2000)
Nicolett, Aparecido Sirley; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor
Source: LATW 00: proceedings. Conference titles: IEEE Latin American Test Workshop. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
NICOLETT, Aparecido Sirley et al. A new method to extract the silicon film thickness of enhancement mode fully depleted SOI nMOSFETs. 2000, Anais.. Piscataway: IEEE/SBC, 2000. . Acesso em: 24 jan. 2026.
APA
Nicolett, A. S., Martino, J. A., Simoen, E., & Claeys, C. (2000). A new method to extract the silicon film thickness of enhancement mode fully depleted SOI nMOSFETs. In LATW 00: proceedings. Piscataway: IEEE/SBC.
NLM
Nicolett AS, Martino JA, Simoen E, Claeys C. A new method to extract the silicon film thickness of enhancement mode fully depleted SOI nMOSFETs. LATW 00: proceedings. 2000 ;[citado 2026 jan. 24 ]
Vancouver
Nicolett AS, Martino JA, Simoen E, Claeys C. A new method to extract the silicon film thickness of enhancement mode fully depleted SOI nMOSFETs. LATW 00: proceedings. 2000 ;[citado 2026 jan. 24 ]
Artigo de periodico
Extraction of the lightly doped drain concentration of fully depleted SOI nMOSFETs using the back gate bias effect (2000)
Nicolett, Aparecido Sirley; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor
Source: Solid-State Electronics. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
NICOLETT, Aparecido Sirley et al. Extraction of the lightly doped drain concentration of fully depleted SOI nMOSFETs using the back gate bias effect. Solid-State Electronics, v. 44, n. 4, p. 677-684, 2000Tradução . . Disponível em: https://doi.org/10.1016/s0038-1101(99)00293-2. Acesso em: 24 jan. 2026.
APA
Nicolett, A. S., Martino, J. A., Simoen, E., & Claeys, C. (2000). Extraction of the lightly doped drain concentration of fully depleted SOI nMOSFETs using the back gate bias effect. Solid-State Electronics, 44( 4), 677-684. doi:10.1016/s0038-1101(99)00293-2
NLM
Nicolett AS, Martino JA, Simoen E, Claeys C. Extraction of the lightly doped drain concentration of fully depleted SOI nMOSFETs using the back gate bias effect [Internet]. Solid-State Electronics. 2000 ; 44( 4): 677-684.[citado 2026 jan. 24 ] Available from: https://doi.org/10.1016/s0038-1101(99)00293-2
Vancouver
Nicolett AS, Martino JA, Simoen E, Claeys C. Extraction of the lightly doped drain concentration of fully depleted SOI nMOSFETs using the back gate bias effect [Internet]. Solid-State Electronics. 2000 ; 44( 4): 677-684.[citado 2026 jan. 24 ] Available from: https://doi.org/10.1016/s0038-1101(99)00293-2
Trabalho de evento
A new method to extract the LDD doping concentration on fully depleted SOI nMOSFET at 300 K (2000)
Nicolett, Aparecido Sirley; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor
Source: Proceedings. Conference titles: IEEE International Conference on Devices, Circuits and Syems. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
NICOLETT, Aparecido Sirley et al. A new method to extract the LDD doping concentration on fully depleted SOI nMOSFET at 300 K. 2000, Anais.. Piscataway: IEEE, 2000. . Acesso em: 24 jan. 2026.
APA
Nicolett, A. S., Martino, J. A., Simoen, E., & Claeys, C. (2000). A new method to extract the LDD doping concentration on fully depleted SOI nMOSFET at 300 K. In Proceedings. Piscataway: IEEE.
NLM
Nicolett AS, Martino JA, Simoen E, Claeys C. A new method to extract the LDD doping concentration on fully depleted SOI nMOSFET at 300 K. Proceedings. 2000 ;[citado 2026 jan. 24 ]
Vancouver
Nicolett AS, Martino JA, Simoen E, Claeys C. A new method to extract the LDD doping concentration on fully depleted SOI nMOSFET at 300 K. Proceedings. 2000 ;[citado 2026 jan. 24 ]
Trabalho de evento
Extraction of the silicon film trickness on fully depleted SOI nMOSFETs using the back gate voltage influence (2000)
Nicolett, Aparecido Sirley; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor
Source: SBMicro 2000 : proceedings. Conference titles: International Conference on Microelectronics and Packaging. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
NICOLETT, Aparecido Sirley et al. Extraction of the silicon film trickness on fully depleted SOI nMOSFETs using the back gate voltage influence. 2000, Anais.. Manaus: SBMicro/UA/UFRGS/UNICAMP/USP, 2000. . Acesso em: 24 jan. 2026.
APA
Nicolett, A. S., Martino, J. A., Simoen, E., & Claeys, C. (2000). Extraction of the silicon film trickness on fully depleted SOI nMOSFETs using the back gate voltage influence. In SBMicro 2000 : proceedings. Manaus: SBMicro/UA/UFRGS/UNICAMP/USP.
NLM
Nicolett AS, Martino JA, Simoen E, Claeys C. Extraction of the silicon film trickness on fully depleted SOI nMOSFETs using the back gate voltage influence. SBMicro 2000 : proceedings. 2000 ;[citado 2026 jan. 24 ]
Vancouver
Nicolett AS, Martino JA, Simoen E, Claeys C. Extraction of the silicon film trickness on fully depleted SOI nMOSFETs using the back gate voltage influence. SBMicro 2000 : proceedings. 2000 ;[citado 2026 jan. 24 ]
Trabalho de evento
A novel simple method to extract the effective LDD doping concentration on fully depleted SOI NMOSFET (1999)
Nicolett, Aparecido Sirley; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor
Source: ICMP 99 : Technical Digest. Conference titles: International Conference on Microelectronics and Packaging. Unidade: EP
Assunto: CIRCUITOS ELÉTRICOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
NICOLETT, Aparecido Sirley et al. A novel simple method to extract the effective LDD doping concentration on fully depleted SOI NMOSFET. 1999, Anais.. São Paulo: SBMicro/IMAPS, 1999. . Acesso em: 24 jan. 2026.
APA
Nicolett, A. S., Martino, J. A., Simoen, E., & Claeys, C. (1999). A novel simple method to extract the effective LDD doping concentration on fully depleted SOI NMOSFET. In ICMP 99 : Technical Digest. São Paulo: SBMicro/IMAPS.
NLM
Nicolett AS, Martino JA, Simoen E, Claeys C. A novel simple method to extract the effective LDD doping concentration on fully depleted SOI NMOSFET. ICMP 99 : Technical Digest. 1999 ;[citado 2026 jan. 24 ]
Vancouver
Nicolett AS, Martino JA, Simoen E, Claeys C. A novel simple method to extract the effective LDD doping concentration on fully depleted SOI NMOSFET. ICMP 99 : Technical Digest. 1999 ;[citado 2026 jan. 24 ]
Trabalho de evento
Analysis of the back gate voltage on the LDD SOI NMOSFET series resistance (1999)
Nicolett, Aparecido Sirley; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor
Source: ICMP 99 : Technical Digest. Conference titles: International Conference on Microelectronics and Packaging. Unidade: EP
Assunto: CIRCUITOS ELÉTRICOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
NICOLETT, Aparecido Sirley et al. Analysis of the back gate voltage on the LDD SOI NMOSFET series resistance. 1999, Anais.. São Paulo: SBMicro/IMAPS, 1999. . Acesso em: 24 jan. 2026.
APA
Nicolett, A. S., Martino, J. A., Simoen, E., & Claeys, C. (1999). Analysis of the back gate voltage on the LDD SOI NMOSFET series resistance. In ICMP 99 : Technical Digest. São Paulo: SBMicro/IMAPS.
NLM
Nicolett AS, Martino JA, Simoen E, Claeys C. Analysis of the back gate voltage on the LDD SOI NMOSFET series resistance. ICMP 99 : Technical Digest. 1999 ;[citado 2026 jan. 24 ]
Vancouver
Nicolett AS, Martino JA, Simoen E, Claeys C. Analysis of the back gate voltage on the LDD SOI NMOSFET series resistance. ICMP 99 : Technical Digest. 1999 ;[citado 2026 jan. 24 ]
Artigo de periodico
Analysis of the substrate effect on enhancement-mode SOI nMOSFET effective channel length and series resistance extraction at 77 K (1998)
Pavanello, Marcelo Antonio ; Nicolett, Aparecido Sirley; Martino, João Antonio
Source: Journal de Physique IV. Unidade: EP
Assunto: ENERGIA ELÉTRICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PAVANELLO, Marcelo Antonio e NICOLETT, Aparecido Sirley e MARTINO, João Antonio. Analysis of the substrate effect on enhancement-mode SOI nMOSFET effective channel length and series resistance extraction at 77 K. Journal de Physique IV, v. 8, p. 49-52, 1998Tradução . . Disponível em: https://doi.org/10.1051/jp4:1998312. Acesso em: 24 jan. 2026.
APA
Pavanello, M. A., Nicolett, A. S., & Martino, J. A. (1998). Analysis of the substrate effect on enhancement-mode SOI nMOSFET effective channel length and series resistance extraction at 77 K. Journal de Physique IV, 8, 49-52. doi:10.1051/jp4:1998312
NLM
Pavanello MA, Nicolett AS, Martino JA. Analysis of the substrate effect on enhancement-mode SOI nMOSFET effective channel length and series resistance extraction at 77 K [Internet]. Journal de Physique IV. 1998 ;8 49-52.[citado 2026 jan. 24 ] Available from: https://doi.org/10.1051/jp4:1998312
Vancouver
Pavanello MA, Nicolett AS, Martino JA. Analysis of the substrate effect on enhancement-mode SOI nMOSFET effective channel length and series resistance extraction at 77 K [Internet]. Journal de Physique IV. 1998 ;8 49-52.[citado 2026 jan. 24 ] Available from: https://doi.org/10.1051/jp4:1998312

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