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Artigo de periodico
Weak-localization effects in electron billiards (1996)
Gusev, G M; Kvon, Z D; Pogosov, A G; Basmaji, Pierre
Source: Journal of Experimental and Theoretical Physics. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, SEMICONDUTORES
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ABNT
GUSEV, G M et al. Weak-localization effects in electron billiards. Journal of Experimental and Theoretical Physics, v. 83, n. 2 , p. 375-8, 1996Tradução . . Acesso em: 16 abr. 2024.
APA
Gusev, G. M., Kvon, Z. D., Pogosov, A. G., & Basmaji, P. (1996). Weak-localization effects in electron billiards. Journal of Experimental and Theoretical Physics, 83( 2 ), 375-8.
NLM
Gusev GM, Kvon ZD, Pogosov AG, Basmaji P. Weak-localization effects in electron billiards. Journal of Experimental and Theoretical Physics. 1996 ;83( 2 ): 375-8.[citado 2024 abr. 16 ]
Vancouver
Gusev GM, Kvon ZD, Pogosov AG, Basmaji P. Weak-localization effects in electron billiards. Journal of Experimental and Theoretical Physics. 1996 ;83( 2 ): 375-8.[citado 2024 abr. 16 ]
Artigo de periodico
Weak antilocalization in HgTe quantum wells near a topological transition (2010)
Olshanetskya, E B; Kvon, Z D; Gusev, Guennadii Michailovich ; Mikhailov, Nikolai N; Dvoretsky, S A; Portal, J C
Source: JETP Letters. Unidade: IF
Assunto: POÇOS QUÂNTICOS
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ABNT
OLSHANETSKYA, E B et al. Weak antilocalization in HgTe quantum wells near a topological transition. JETP Letters, v. 91, n. 7, p. 347-350, 2010Tradução . . Disponível em: https://doi.org/10.1134/S0021364010070052. Acesso em: 16 abr. 2024.
APA
Olshanetskya, E. B., Kvon, Z. D., Gusev, G. M., Mikhailov, N. N., Dvoretsky, S. A., & Portal, J. C. (2010). Weak antilocalization in HgTe quantum wells near a topological transition. JETP Letters, 91( 7), 347-350. doi:10.1134/S0021364010070052
NLM
Olshanetskya EB, Kvon ZD, Gusev GM, Mikhailov NN, Dvoretsky SA, Portal JC. Weak antilocalization in HgTe quantum wells near a topological transition [Internet]. JETP Letters. 2010 ; 91( 7): 347-350.[citado 2024 abr. 16 ] Available from: https://doi.org/10.1134/S0021364010070052
Vancouver
Olshanetskya EB, Kvon ZD, Gusev GM, Mikhailov NN, Dvoretsky SA, Portal JC. Weak antilocalization in HgTe quantum wells near a topological transition [Internet]. JETP Letters. 2010 ; 91( 7): 347-350.[citado 2024 abr. 16 ] Available from: https://doi.org/10.1134/S0021364010070052
Artigo de periodico
Two-dimensional semimetal-insulator transition in HgTe-based quantum wells induced by a longitudinal magnetic field (2012)
Olshanetsky, E B; Kvon, Z D; Mikhailov, N M; Dvoretsky, S A; Gusev, G M
Source: JETP Letters. Unidade: IF
Assunto: MAGNETISMO
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ABNT
OLSHANETSKY, E B et al. Two-dimensional semimetal-insulator transition in HgTe-based quantum wells induced by a longitudinal magnetic field. JETP Letters, v. 96, n. 4, p. 251-254, 2012Tradução . . Disponível em: https://doi.org/10.1134/S0021364012160072. Acesso em: 16 abr. 2024.
APA
Olshanetsky, E. B., Kvon, Z. D., Mikhailov, N. M., Dvoretsky, S. A., & Gusev, G. M. (2012). Two-dimensional semimetal-insulator transition in HgTe-based quantum wells induced by a longitudinal magnetic field. JETP Letters, 96( 4), 251-254. doi:10.1134/S0021364012160072
NLM
Olshanetsky EB, Kvon ZD, Mikhailov NM, Dvoretsky SA, Gusev GM. Two-dimensional semimetal-insulator transition in HgTe-based quantum wells induced by a longitudinal magnetic field [Internet]. JETP Letters. 2012 ;96( 4): 251-254.[citado 2024 abr. 16 ] Available from: https://doi.org/10.1134/S0021364012160072
Vancouver
Olshanetsky EB, Kvon ZD, Mikhailov NM, Dvoretsky SA, Gusev GM. Two-dimensional semimetal-insulator transition in HgTe-based quantum wells induced by a longitudinal magnetic field [Internet]. JETP Letters. 2012 ;96( 4): 251-254.[citado 2024 abr. 16 ] Available from: https://doi.org/10.1134/S0021364012160072
Artigo de periodico
Transport through the network of topological channels in HgTe based quantum well (2022)
Gusev, Gennady ; Kvon, Z D; Kozlov, D A; Olshanetsky, E B; Entin, M V; Mikhailov, NN
Source: 2D Materials. Unidade: IF
Subjects: FÉRMIO, POÇOS QUÂNTICOS
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ABNT
GUSEV, Gennady et al. Transport through the network of topological channels in HgTe based quantum well. 2D Materials, v. 9, n. 1, 2022Tradução . . Disponível em: https://doi.org/10.1088/2053-1583/ac351e. Acesso em: 16 abr. 2024.
APA
Gusev, G., Kvon, Z. D., Kozlov, D. A., Olshanetsky, E. B., Entin, M. V., & Mikhailov, N. N. (2022). Transport through the network of topological channels in HgTe based quantum well. 2D Materials, 9( 1). doi:10.1088/2053-1583/ac351e
NLM
Gusev G, Kvon ZD, Kozlov DA, Olshanetsky EB, Entin MV, Mikhailov NN. Transport through the network of topological channels in HgTe based quantum well [Internet]. 2D Materials. 2022 ; 9( 1):[citado 2024 abr. 16 ] Available from: https://doi.org/10.1088/2053-1583/ac351e
Vancouver
Gusev G, Kvon ZD, Kozlov DA, Olshanetsky EB, Entin MV, Mikhailov NN. Transport through the network of topological channels in HgTe based quantum well [Internet]. 2D Materials. 2022 ; 9( 1):[citado 2024 abr. 16 ] Available from: https://doi.org/10.1088/2053-1583/ac351e
Artigo de periodico
Transport in disordered two-dimensional topological insulators (2011)
Gusev, G M ; Kvon, Z D; Shegai, O A; Mikhailov, N N; Dvoretsky, S A; Portal, J C
Source: PHYSICAL REVIEW D. Unidade: IF
Assunto: SEMICONDUTORES
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ABNT
GUSEV, G M et al. Transport in disordered two-dimensional topological insulators. PHYSICAL REVIEW D, v. 84, n. 12, p. 121302, 2011Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.84.121302. Acesso em: 16 abr. 2024.
APA
Gusev, G. M., Kvon, Z. D., Shegai, O. A., Mikhailov, N. N., Dvoretsky, S. A., & Portal, J. C. (2011). Transport in disordered two-dimensional topological insulators. PHYSICAL REVIEW D, 84( 12), 121302. doi:10.1103/PhysRevB.84.121302
NLM
Gusev GM, Kvon ZD, Shegai OA, Mikhailov NN, Dvoretsky SA, Portal JC. Transport in disordered two-dimensional topological insulators [Internet]. PHYSICAL REVIEW D. 2011 ;84( 12): 121302.[citado 2024 abr. 16 ] Available from: https://doi.org/10.1103/PhysRevB.84.121302
Vancouver
Gusev GM, Kvon ZD, Shegai OA, Mikhailov NN, Dvoretsky SA, Portal JC. Transport in disordered two-dimensional topological insulators [Internet]. PHYSICAL REVIEW D. 2011 ;84( 12): 121302.[citado 2024 abr. 16 ] Available from: https://doi.org/10.1103/PhysRevB.84.121302
Relatorio tecnico
Transport in disordered two-dimensional topological insulator (2011)
Gusev, G M; Kvon, Z D; Shegai, O A; Portal, J C; Mikhailov, N N; Dvoretsky, S A
Unidade: IF
Assunto: SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GUSEV, G M et al. Transport in disordered two-dimensional topological insulator. . São Paulo: Instituto de Física, Universidade de São Paulo. Disponível em: http://arxiv.org/PS_cache/arxiv/pdf/1106/1106.1824v1.pdf. Acesso em: 16 abr. 2024. , 2011
APA
Gusev, G. M., Kvon, Z. D., Shegai, O. A., Portal, J. C., Mikhailov, N. N., & Dvoretsky, S. A. (2011). Transport in disordered two-dimensional topological insulator. São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de http://arxiv.org/PS_cache/arxiv/pdf/1106/1106.1824v1.pdf
NLM
Gusev GM, Kvon ZD, Shegai OA, Portal JC, Mikhailov NN, Dvoretsky SA. Transport in disordered two-dimensional topological insulator [Internet]. 2011 ;[citado 2024 abr. 16 ] Available from: http://arxiv.org/PS_cache/arxiv/pdf/1106/1106.1824v1.pdf
Vancouver
Gusev GM, Kvon ZD, Shegai OA, Portal JC, Mikhailov NN, Dvoretsky SA. Transport in disordered two-dimensional topological insulator [Internet]. 2011 ;[citado 2024 abr. 16 ] Available from: http://arxiv.org/PS_cache/arxiv/pdf/1106/1106.1824v1.pdf
Relatorio tecnico
Transition from insulating to metallic phase induced by in-plane magnetic ﬁeld in HgTe quantum wells (2013)
Gusev, Guennadii Michailovich; Olshanetsky, E B; Kvon, Z D; Raichev, O E; Mikhailov, N N; Dvoretsky, S A
Unidade: IF
Subjects: POÇOS QUÂNTICOS, SEMICONDUTORES, MAGNETISMO (RESISTÊNCIA)
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GUSEV, Guennadii Michailovich et al. Transition from insulating to metallic phase induced by in-plane magnetic ﬁeld in HgTe quantum wells. . São Paulo: Instituto de Física, Universidade de São Paulo. Disponível em: http://lanl.arxiv.org/pdf/1311.6775v1.pdf. Acesso em: 16 abr. 2024. , 2013
APA
Gusev, G. M., Olshanetsky, E. B., Kvon, Z. D., Raichev, O. E., Mikhailov, N. N., & Dvoretsky, S. A. (2013). Transition from insulating to metallic phase induced by in-plane magnetic ﬁeld in HgTe quantum wells. São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de http://lanl.arxiv.org/pdf/1311.6775v1.pdf
NLM
Gusev GM, Olshanetsky EB, Kvon ZD, Raichev OE, Mikhailov NN, Dvoretsky SA. Transition from insulating to metallic phase induced by in-plane magnetic ﬁeld in HgTe quantum wells [Internet]. 2013 ;[citado 2024 abr. 16 ] Available from: http://lanl.arxiv.org/pdf/1311.6775v1.pdf
Vancouver
Gusev GM, Olshanetsky EB, Kvon ZD, Raichev OE, Mikhailov NN, Dvoretsky SA. Transition from insulating to metallic phase induced by in-plane magnetic ﬁeld in HgTe quantum wells [Internet]. 2013 ;[citado 2024 abr. 16 ] Available from: http://lanl.arxiv.org/pdf/1311.6775v1.pdf
Artigo de periodico
Topological insulators based on HgTe (2020)
Kvon, Z D; Kozlov, D A; Olshanetsky, E B; Gusev, G M ; Mikhailov, N N; Dvoretsky, S A
Source: Physics Uspekhi. Unidade: IF
Assunto: POÇOS QUÂNTICOS
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ABNT
KVON, Z D et al. Topological insulators based on HgTe. Physics Uspekhi, v. 63, n. 7, p. 629-647, 2020Tradução . . Disponível em: https://doi.org/10.3367/UFNe.2019.10.038669. Acesso em: 16 abr. 2024.
APA
Kvon, Z. D., Kozlov, D. A., Olshanetsky, E. B., Gusev, G. M., Mikhailov, N. N., & Dvoretsky, S. A. (2020). Topological insulators based on HgTe. Physics Uspekhi, 63( 7), 629-647. doi:10.3367/UFNe.2019.10.038669
NLM
Kvon ZD, Kozlov DA, Olshanetsky EB, Gusev GM, Mikhailov NN, Dvoretsky SA. Topological insulators based on HgTe [Internet]. Physics Uspekhi. 2020 ; 63( 7): 629-647.[citado 2024 abr. 16 ] Available from: https://doi.org/10.3367/UFNe.2019.10.038669
Vancouver
Kvon ZD, Kozlov DA, Olshanetsky EB, Gusev GM, Mikhailov NN, Dvoretsky SA. Topological insulators based on HgTe [Internet]. Physics Uspekhi. 2020 ; 63( 7): 629-647.[citado 2024 abr. 16 ] Available from: https://doi.org/10.3367/UFNe.2019.10.038669
Artigo de periodico
Thermoelectric transport in two-dimensional topological insulator state based on HgTe quantum well (2019)
Gusev, G M ; Raichev, O E; Olshanetsky, E B; Levin, A D ; Kvon, Z D; Mikhailov, N N; Dvoretsky, S A
Source: 2D Materials. Unidade: IF
Subjects: TERMOELETRICIDADE, CONDUTIVIDADE ELÉTRICA, POÇOS QUÂNTICOS
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ABNT
GUSEV, G M et al. Thermoelectric transport in two-dimensional topological insulator state based on HgTe quantum well. 2D Materials, v. 6, n. 014001, p. 1-21, 2019Tradução . . Disponível em: https://doi.org/10.1088/2053-1583/aaf702. Acesso em: 16 abr. 2024.
APA
Gusev, G. M., Raichev, O. E., Olshanetsky, E. B., Levin, A. D., Kvon, Z. D., Mikhailov, N. N., & Dvoretsky, S. A. (2019). Thermoelectric transport in two-dimensional topological insulator state based on HgTe quantum well. 2D Materials, 6( 014001), 1-21. doi:10.1088/2053-1583/aaf702
NLM
Gusev GM, Raichev OE, Olshanetsky EB, Levin AD, Kvon ZD, Mikhailov NN, Dvoretsky SA. Thermoelectric transport in two-dimensional topological insulator state based on HgTe quantum well [Internet]. 2D Materials. 2019 ; 6( 014001): 1-21.[citado 2024 abr. 16 ] Available from: https://doi.org/10.1088/2053-1583/aaf702
Vancouver
Gusev GM, Raichev OE, Olshanetsky EB, Levin AD, Kvon ZD, Mikhailov NN, Dvoretsky SA. Thermoelectric transport in two-dimensional topological insulator state based on HgTe quantum well [Internet]. 2D Materials. 2019 ; 6( 014001): 1-21.[citado 2024 abr. 16 ] Available from: https://doi.org/10.1088/2053-1583/aaf702
Trabalho de evento-resumo
Thermoelectric phenomena in 2D e 3D topological insulators (2022)
Levin, A D ; Gusev, Guennadii Michailovich ; Raichev, O E; Olshanetsky, E B; Kvon, Z D; Mikhailov, N N; Dvoretsky, S A
Source: Resumos. Conference titles: Encontro de Outono da Sociedade Brasileira de Física. Unidade: IF
Assunto: TERMOELETRICIDADE
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ABNT
LEVIN, A D et al. Thermoelectric phenomena in 2D e 3D topological insulators. 2022, Anais.. São Paulo: Sociedade Brasileira de Física, 2022. . Acesso em: 16 abr. 2024.
APA
Levin, A. D., Gusev, G. M., Raichev, O. E., Olshanetsky, E. B., Kvon, Z. D., Mikhailov, N. N., & Dvoretsky, S. A. (2022). Thermoelectric phenomena in 2D e 3D topological insulators. In Resumos. São Paulo: Sociedade Brasileira de Física.
NLM
Levin AD, Gusev GM, Raichev OE, Olshanetsky EB, Kvon ZD, Mikhailov NN, Dvoretsky SA. Thermoelectric phenomena in 2D e 3D topological insulators. Resumos. 2022 ;[citado 2024 abr. 16 ]
Vancouver
Levin AD, Gusev GM, Raichev OE, Olshanetsky EB, Kvon ZD, Mikhailov NN, Dvoretsky SA. Thermoelectric phenomena in 2D e 3D topological insulators. Resumos. 2022 ;[citado 2024 abr. 16 ]
Relatorio tecnico
The resistance of 2D Topological insulator in the absence of the quantized transport (2013)
Gusev, Guennadii Michailovich; Kvon, Z D; Olshanetsky, E B; Levine, Alexandre; Krupko, Y; Portal, J C; Mikhailov, N N; Dvoretsky, S A
Unidade: IF
Subjects: POÇOS QUÂNTICOS, SEMICONDUTORES, MAGNETISMO (RESISTÊNCIA)
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GUSEV, Guennadii Michailovich et al. The resistance of 2D Topological insulator in the absence of the quantized transport. . São Paulo: Instituto de Física, Universidade de São Paulo. Disponível em: http://lanl.arxiv.org/pdf/1308.4356v1.pdf. Acesso em: 16 abr. 2024. , 2013
APA
Gusev, G. M., Kvon, Z. D., Olshanetsky, E. B., Levine, A., Krupko, Y., Portal, J. C., et al. (2013). The resistance of 2D Topological insulator in the absence of the quantized transport. São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de http://lanl.arxiv.org/pdf/1308.4356v1.pdf
NLM
Gusev GM, Kvon ZD, Olshanetsky EB, Levine A, Krupko Y, Portal JC, Mikhailov NN, Dvoretsky SA. The resistance of 2D Topological insulator in the absence of the quantized transport [Internet]. 2013 ;[citado 2024 abr. 16 ] Available from: http://lanl.arxiv.org/pdf/1308.4356v1.pdf
Vancouver
Gusev GM, Kvon ZD, Olshanetsky EB, Levine A, Krupko Y, Portal JC, Mikhailov NN, Dvoretsky SA. The resistance of 2D Topological insulator in the absence of the quantized transport [Internet]. 2013 ;[citado 2024 abr. 16 ] Available from: http://lanl.arxiv.org/pdf/1308.4356v1.pdf
Artigo de periodico
Temperature dependence of the Aharonov-Bohm oscillations and the energy spectrum in a single-mode ballistic ring (2000)
Casse, M; Kvon, Z D; Gusev, Guennadii Michailovich; Olshanetskii, E B; Litvin, L V; Plotnikov, A V; Maude, D K
Source: Physical Review B. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
CASSE, M et al. Temperature dependence of the Aharonov-Bohm oscillations and the energy spectrum in a single-mode ballistic ring. Physical Review B, n. 4, p. 2426-2429, 2000Tradução . . Disponível em: https://doi.org/10.1103/physrevb.62.2624. Acesso em: 16 abr. 2024.
APA
Casse, M., Kvon, Z. D., Gusev, G. M., Olshanetskii, E. B., Litvin, L. V., Plotnikov, A. V., & Maude, D. K. (2000). Temperature dependence of the Aharonov-Bohm oscillations and the energy spectrum in a single-mode ballistic ring. Physical Review B, ( 4), 2426-2429. doi:10.1103/physrevb.62.2624
NLM
Casse M, Kvon ZD, Gusev GM, Olshanetskii EB, Litvin LV, Plotnikov AV, Maude DK. Temperature dependence of the Aharonov-Bohm oscillations and the energy spectrum in a single-mode ballistic ring [Internet]. Physical Review B. 2000 ;( 4): 2426-2429.[citado 2024 abr. 16 ] Available from: https://doi.org/10.1103/physrevb.62.2624
Vancouver
Casse M, Kvon ZD, Gusev GM, Olshanetskii EB, Litvin LV, Plotnikov AV, Maude DK. Temperature dependence of the Aharonov-Bohm oscillations and the energy spectrum in a single-mode ballistic ring [Internet]. Physical Review B. 2000 ;( 4): 2426-2429.[citado 2024 abr. 16 ] Available from: https://doi.org/10.1103/physrevb.62.2624
Artigo de periodico
Symmetric, gated, ballistic rings as tunable electron interferometers (2000)
Olshanetsky, E B; Casse, M; Kvon, Z D; Gusev, Guennadii Michailovich; Litvin, L V; Plotnikov, A V; Maude, D K; Portal, J C
Source: Physica E. Unidade: IF
Assunto: FÍSICA
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ABNT
OLSHANETSKY, E B et al. Symmetric, gated, ballistic rings as tunable electron interferometers. Physica E, v. 6, n. 1-4, p. 322-326, 2000Tradução . . Disponível em: https://doi.org/10.1016/s1386-9477(99)00160-5. Acesso em: 16 abr. 2024.
APA
Olshanetsky, E. B., Casse, M., Kvon, Z. D., Gusev, G. M., Litvin, L. V., Plotnikov, A. V., et al. (2000). Symmetric, gated, ballistic rings as tunable electron interferometers. Physica E, 6( 1-4), 322-326. doi:10.1016/s1386-9477(99)00160-5
NLM
Olshanetsky EB, Casse M, Kvon ZD, Gusev GM, Litvin LV, Plotnikov AV, Maude DK, Portal JC. Symmetric, gated, ballistic rings as tunable electron interferometers [Internet]. Physica E. 2000 ; 6( 1-4): 322-326.[citado 2024 abr. 16 ] Available from: https://doi.org/10.1016/s1386-9477(99)00160-5
Vancouver
Olshanetsky EB, Casse M, Kvon ZD, Gusev GM, Litvin LV, Plotnikov AV, Maude DK, Portal JC. Symmetric, gated, ballistic rings as tunable electron interferometers [Internet]. Physica E. 2000 ; 6( 1-4): 322-326.[citado 2024 abr. 16 ] Available from: https://doi.org/10.1016/s1386-9477(99)00160-5
Artigo de periodico
Stokes flow around an obstacle in viscous two-dimensional electron liquid (2020)
Gusev, G M ; Jaroshevich, A S; Levin, A D ; Kvon, Z D; A. K. Bakarov. A K
Source: Scientific Reports. Unidade: IF
Assunto: HIDRODINÂMICA
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ABNT
GUSEV, G M et al. Stokes flow around an obstacle in viscous two-dimensional electron liquid. Scientific Reports, v. 10, 2020Tradução . . Disponível em: https://doi.org/10.1038/s41598-020-64807-6. Acesso em: 16 abr. 2024.
APA
Gusev, G. M., Jaroshevich, A. S., Levin, A. D., Kvon, Z. D., & A. K. Bakarov. A K,. (2020). Stokes flow around an obstacle in viscous two-dimensional electron liquid. Scientific Reports, 10. doi:10.1038/s41598-020-64807-6
NLM
Gusev GM, Jaroshevich AS, Levin AD, Kvon ZD, A. K. Bakarov. A K. Stokes flow around an obstacle in viscous two-dimensional electron liquid [Internet]. Scientific Reports. 2020 ; 10[citado 2024 abr. 16 ] Available from: https://doi.org/10.1038/s41598-020-64807-6
Vancouver
Gusev GM, Jaroshevich AS, Levin AD, Kvon ZD, A. K. Bakarov. A K. Stokes flow around an obstacle in viscous two-dimensional electron liquid [Internet]. Scientific Reports. 2020 ; 10[citado 2024 abr. 16 ] Available from: https://doi.org/10.1038/s41598-020-64807-6
Trabalho de evento-anais periodico
Spin-splitting collapse in a 2D electron gas in AlGaAs/GaAs heterostructure (1998)
Gusev, G M; Kvon, Z D; Olshanetsky, E B; Maude, D K; Portal, J C
Source: Physica B. Conference titles: International Conference on the Electronic Properties of Two-Dimensional Systems, EP2DS-12. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
GUSEV, G M et al. Spin-splitting collapse in a 2D electron gas in AlGaAs/GaAs heterostructure. Physica B. Amsterdam: North-Holland Physics. . Acesso em: 16 abr. 2024. , 1998
APA
Gusev, G. M., Kvon, Z. D., Olshanetsky, E. B., Maude, D. K., & Portal, J. C. (1998). Spin-splitting collapse in a 2D electron gas in AlGaAs/GaAs heterostructure. Physica B. Amsterdam: North-Holland Physics.
NLM
Gusev GM, Kvon ZD, Olshanetsky EB, Maude DK, Portal JC. Spin-splitting collapse in a 2D electron gas in AlGaAs/GaAs heterostructure. Physica B. 1998 ; 249-251 771-774.[citado 2024 abr. 16 ]
Vancouver
Gusev GM, Kvon ZD, Olshanetsky EB, Maude DK, Portal JC. Spin-splitting collapse in a 2D electron gas in AlGaAs/GaAs heterostructure. Physica B. 1998 ; 249-251 771-774.[citado 2024 abr. 16 ]
Artigo de periodico
Robust helical edge transport at 'nü' = 0 quantum Hall state (2017)
Gusev, Guennadii Michailovich; Kozlov, D A; Levin, Alexander D; Kvon, Z D; Mikhailov, N N; Dvoretsky, S A
Source: Physical Review B. Unidade: IF
Assunto: ESTRUTURA ELETRÔNICA
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ABNT
GUSEV, Guennadii Michailovich et al. Robust helical edge transport at 'nü' = 0 quantum Hall state. Physical Review B, v. 96, n. 4, p. 045304/1-045304/5, 2017Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.96.045304. Acesso em: 16 abr. 2024.
APA
Gusev, G. M., Kozlov, D. A., Levin, A. D., Kvon, Z. D., Mikhailov, N. N., & Dvoretsky, S. A. (2017). Robust helical edge transport at 'nü' = 0 quantum Hall state. Physical Review B, 96( 4), 045304/1-045304/5. doi:10.1103/PhysRevB.96.045304
NLM
Gusev GM, Kozlov DA, Levin AD, Kvon ZD, Mikhailov NN, Dvoretsky SA. Robust helical edge transport at 'nü' = 0 quantum Hall state [Internet]. Physical Review B. 2017 ;96( 4): 045304/1-045304/5.[citado 2024 abr. 16 ] Available from: https://doi.org/10.1103/PhysRevB.96.045304
Vancouver
Gusev GM, Kozlov DA, Levin AD, Kvon ZD, Mikhailov NN, Dvoretsky SA. Robust helical edge transport at 'nü' = 0 quantum Hall state [Internet]. Physical Review B. 2017 ;96( 4): 045304/1-045304/5.[citado 2024 abr. 16 ] Available from: https://doi.org/10.1103/PhysRevB.96.045304
Artigo de periodico
Resistivity of 2D electrons with 'nü'=1/2 in a zero magnetic field (1997)
Gusev, Guennadii Michailovich; Kvon, Z D; Olshanetsky, E B; Portal, J C; Maude, D K
Source: JEPT Letters. Unidade: IF
Assunto: FÍSICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GUSEV, Guennadii Michailovich et al. Resistivity of 2D electrons with 'nü'=1/2 in a zero magnetic field. JEPT Letters, v. 66, n. 2, p. 160-165, 1997Tradução . . Acesso em: 16 abr. 2024.
APA
Gusev, G. M., Kvon, Z. D., Olshanetsky, E. B., Portal, J. C., & Maude, D. K. (1997). Resistivity of 2D electrons with 'nü'=1/2 in a zero magnetic field. JEPT Letters, 66( 2), 160-165.
NLM
Gusev GM, Kvon ZD, Olshanetsky EB, Portal JC, Maude DK. Resistivity of 2D electrons with 'nü'=1/2 in a zero magnetic field. JEPT Letters. 1997 ; 66( 2): 160-165.[citado 2024 abr. 16 ]
Vancouver
Gusev GM, Kvon ZD, Olshanetsky EB, Portal JC, Maude DK. Resistivity of 2D electrons with 'nü'=1/2 in a zero magnetic field. JEPT Letters. 1997 ; 66( 2): 160-165.[citado 2024 abr. 16 ]
Relatorio tecnico
Quantum hall eﬀect in n-p-n and n-2D topological insulator-n junctions (2013)
Gusev, Guennadii Michailovich; Levine, Alexandre; Kvon, Z D; Mikhailov, N N; Dvoretsky, S A
Unidade: IF
Assunto: EFEITO HALL
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GUSEV, Guennadii Michailovich et al. Quantum hall eﬀect in n-p-n and n-2D topological insulator-n junctions. . São Paulo: Instituto de Física, Universidade de São Paulo. Disponível em: http://lanl.arxiv.org/pdf/1302.3523v1.pdf. Acesso em: 16 abr. 2024. , 2013
APA
Gusev, G. M., Levine, A., Kvon, Z. D., Mikhailov, N. N., & Dvoretsky, S. A. (2013). Quantum hall eﬀect in n-p-n and n-2D topological insulator-n junctions. São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de http://lanl.arxiv.org/pdf/1302.3523v1.pdf
NLM
Gusev GM, Levine A, Kvon ZD, Mikhailov NN, Dvoretsky SA. Quantum hall eﬀect in n-p-n and n-2D topological insulator-n junctions [Internet]. 2013 ;[citado 2024 abr. 16 ] Available from: http://lanl.arxiv.org/pdf/1302.3523v1.pdf
Vancouver
Gusev GM, Levine A, Kvon ZD, Mikhailov NN, Dvoretsky SA. Quantum hall eﬀect in n-p-n and n-2D topological insulator-n junctions [Internet]. 2013 ;[citado 2024 abr. 16 ] Available from: http://lanl.arxiv.org/pdf/1302.3523v1.pdf
Artigo de periodico
Quantum Hall Effect near the Charge Neutrality Point in a Two-Dimensional Electron-Hole System (2010)
Gousev, Guennadii Michailovich; Olshanetsky, E B; Kvon, Z D; Mikhailov, Nikolai N; Dvoretsky, S A; Portal, J C
Source: Physical Review Letters. Unidade: IF
Assunto: EFEITO HALL
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GOUSEV, Guennadii Michailovich et al. Quantum Hall Effect near the Charge Neutrality Point in a Two-Dimensional Electron-Hole System. Physical Review Letters, v. 104, n. 16, p. 166401-1 - 166401-4, 2010Tradução . . Disponível em: http://prl.aps.org/pdf/PRL/v104/i16/e166401. Acesso em: 16 abr. 2024.
APA
Gousev, G. M., Olshanetsky, E. B., Kvon, Z. D., Mikhailov, N. N., Dvoretsky, S. A., & Portal, J. C. (2010). Quantum Hall Effect near the Charge Neutrality Point in a Two-Dimensional Electron-Hole System. Physical Review Letters, 104( 16), 166401-1 - 166401-4. Recuperado de http://prl.aps.org/pdf/PRL/v104/i16/e166401
NLM
Gousev GM, Olshanetsky EB, Kvon ZD, Mikhailov NN, Dvoretsky SA, Portal JC. Quantum Hall Effect near the Charge Neutrality Point in a Two-Dimensional Electron-Hole System [Internet]. Physical Review Letters. 2010 ; 104( 16): 166401-1 - 166401-4.[citado 2024 abr. 16 ] Available from: http://prl.aps.org/pdf/PRL/v104/i16/e166401
Vancouver
Gousev GM, Olshanetsky EB, Kvon ZD, Mikhailov NN, Dvoretsky SA, Portal JC. Quantum Hall Effect near the Charge Neutrality Point in a Two-Dimensional Electron-Hole System [Internet]. Physical Review Letters. 2010 ; 104( 16): 166401-1 - 166401-4.[citado 2024 abr. 16 ] Available from: http://prl.aps.org/pdf/PRL/v104/i16/e166401
Relatorio tecnico
Nonlocal transport near the charge neutrality point in a two-dimensional electron-hole system (2012)
Gusev, G M; Kvon, Z D; Mikhailov, N N; Dvoretsky, S A; Olshanetsky, E B; Levin, A D
Unidade: IF
Subjects: CAMPO MAGNÉTICO, ELÉTRONS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GUSEV, G M et al. Nonlocal transport near the charge neutrality point in a two-dimensional electron-hole system. . São Paulo: Instituto de Física, Universidade de São Paulo. Disponível em: http://arxiv.org/pdf/1205.7070v1.pdf. Acesso em: 16 abr. 2024. , 2012
APA
Gusev, G. M., Kvon, Z. D., Mikhailov, N. N., Dvoretsky, S. A., Olshanetsky, E. B., & Levin, A. D. (2012). Nonlocal transport near the charge neutrality point in a two-dimensional electron-hole system. São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de http://arxiv.org/pdf/1205.7070v1.pdf
NLM
Gusev GM, Kvon ZD, Mikhailov NN, Dvoretsky SA, Olshanetsky EB, Levin AD. Nonlocal transport near the charge neutrality point in a two-dimensional electron-hole system [Internet]. 2012 ;[citado 2024 abr. 16 ] Available from: http://arxiv.org/pdf/1205.7070v1.pdf
Vancouver
Gusev GM, Kvon ZD, Mikhailov NN, Dvoretsky SA, Olshanetsky EB, Levin AD. Nonlocal transport near the charge neutrality point in a two-dimensional electron-hole system [Internet]. 2012 ;[citado 2024 abr. 16 ] Available from: http://arxiv.org/pdf/1205.7070v1.pdf

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