Hydrostatic pressure studies of GaAs tunnel diodes (1998)
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, MATÉRIA CONDENSADA (PROPRIEDADES ELÉTRICAS), SEMICONDUTORES
ABNT
BEJI, L; EL JANI, B; GIBART, P; PORTAL, J C; BASMAJI, Pierre. Hydrostatic pressure studies of GaAs tunnel diodes. Journal of Applied Physics, New York, v. 83, n. 10, p. 5573-5575, 1998. DOI: 10.1063/1.367394.APA
Beji, L., El Jani, B., Gibart, P., Portal, J. C., & Basmaji, P. (1998). Hydrostatic pressure studies of GaAs tunnel diodes. Journal of Applied Physics, 83( 10), 5573-5575. doi:10.1063/1.367394NLM
Beji L, El Jani B, Gibart P, Portal JC, Basmaji P. Hydrostatic pressure studies of GaAs tunnel diodes. Journal of Applied Physics. 1998 ; 83( 10): 5573-5575.Vancouver
Beji L, El Jani B, Gibart P, Portal JC, Basmaji P. Hydrostatic pressure studies of GaAs tunnel diodes. Journal of Applied Physics. 1998 ; 83( 10): 5573-5575.