ReP USP - Resultado da busca

Artigo de periodico
Hydrostatic pressure studies of GaAs tunnel diodes (1998)
Beji, L; El Jani, B; Gibart, P; Portal, J C; Basmaji, Pierre
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, MATÉRIA CONDENSADA (PROPRIEDADES ELÉTRICAS), SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BEJI, L; EL JANI, B; GIBART, P; PORTAL, J C; BASMAJI, Pierre. Hydrostatic pressure studies of GaAs tunnel diodes. Journal of Applied Physics, New York, v. 83, n. 10, p. 5573-5575, 1998. DOI: 10.1063/1.367394.
APA
Beji, L., El Jani, B., Gibart, P., Portal, J. C., & Basmaji, P. (1998). Hydrostatic pressure studies of GaAs tunnel diodes. Journal of Applied Physics, 83( 10), 5573-5575. doi:10.1063/1.367394
NLM
Beji L, El Jani B, Gibart P, Portal JC, Basmaji P. Hydrostatic pressure studies of GaAs tunnel diodes. Journal of Applied Physics. 1998 ; 83( 10): 5573-5575.
Vancouver
Beji L, El Jani B, Gibart P, Portal JC, Basmaji P. Hydrostatic pressure studies of GaAs tunnel diodes. Journal of Applied Physics. 1998 ; 83( 10): 5573-5575.
Trabalho de evento
Characterization of metastable dx centers in 'AL IND.X''GA IND.1-X''AS' under hydrostatic pressure (1990)
Basmaji, Pierre; Lavielle, D; Portal, J C; Gibart, P
Source: Proceedings. Conference titles: Brazilian School of Semiconductor Physics. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BASMAJI, Pierre; LAVIELLE, D; PORTAL, J C; GIBART, P. Characterization of metastable dx centers in 'AL IND.X''GA IND.1-X''AS' under hydrostatic pressure. Anais.. Singapore: World Scientific, 1990.
APA
Basmaji, P., Lavielle, D., Portal, J. C., & Gibart, P. (1990). Characterization of metastable dx centers in 'AL IND.X''GA IND.1-X''AS' under hydrostatic pressure. In Proceedings. Singapore: World Scientific.
NLM
Basmaji P, Lavielle D, Portal JC, Gibart P. Characterization of metastable dx centers in 'AL IND.X''GA IND.1-X''AS' under hydrostatic pressure. Proceedings. 1990 ;
Vancouver
Basmaji P, Lavielle D, Portal JC, Gibart P. Characterization of metastable dx centers in 'AL IND.X''GA IND.1-X''AS' under hydrostatic pressure. Proceedings. 1990 ;
Trabalho de evento
Pressure dependence and comparsion of the 'SI' and 'SN' related dx centers in 'AL IND.X''GA IND.1-X''AS' (1990)
Lavielle, D; Sallese, J M; Goutiers, B; Dmowski, L; Basmaji, Pierre; Portal, J C; Gibart, P
Source: Proceedings. Conference titles: International Symposium 'ga''as' and Related Compounds. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA (PROPRIEDADES ELÉTRICAS)
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
LAVIELLE, D; SALLESE, J M; GOUTIERS, B; et al. Pressure dependence and comparsion of the 'SI' and 'SN' related dx centers in 'AL IND.X''GA IND.1-X''AS'. Anais.. Karuizawa: Iop, 1990.
APA
Lavielle, D., Sallese, J. M., Goutiers, B., Dmowski, L., Basmaji, P., Portal, J. C., & Gibart, P. (1990). Pressure dependence and comparsion of the 'SI' and 'SN' related dx centers in 'AL IND.X''GA IND.1-X''AS'. In Proceedings. Karuizawa: Iop.
NLM
Lavielle D, Sallese JM, Goutiers B, Dmowski L, Basmaji P, Portal JC, Gibart P. Pressure dependence and comparsion of the 'SI' and 'SN' related dx centers in 'AL IND.X''GA IND.1-X''AS'. Proceedings. 1990 ;
Vancouver
Lavielle D, Sallese JM, Goutiers B, Dmowski L, Basmaji P, Portal JC, Gibart P. Pressure dependence and comparsion of the 'SI' and 'SN' related dx centers in 'AL IND.X''GA IND.1-X''AS'. Proceedings. 1990 ;
Trabalho de evento
Movpe growth of 'AL IND.1-X''AS' above 850'GRAUS'c (1990)
Basmaji, Pierre; Gibart, P
Source: Proceedings. Conference titles: Brazilian School of Semiconductor Physics. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BASMAJI, Pierre; GIBART, P. Movpe growth of 'AL IND.1-X''AS' above 850'GRAUS'c. Anais.. Singapore: World Scientific, 1990.
APA
Basmaji, P., & Gibart, P. (1990). Movpe growth of 'AL IND.1-X''AS' above 850'GRAUS'c. In Proceedings. Singapore: World Scientific.
NLM
Basmaji P, Gibart P. Movpe growth of 'AL IND.1-X''AS' above 850'GRAUS'c. Proceedings. 1990 ;
Vancouver
Basmaji P, Gibart P. Movpe growth of 'AL IND.1-X''AS' above 850'GRAUS'c. Proceedings. 1990 ;

USP Schools

ReP

Filtros

Authors