Source: Brazilian Journal of Physics. Unidade: IF
Assunto: FOTOLUMINESCÊNCIA
ABNT
LAURETO, E; MENESES, E A; CARVALHO JUNIOR, W; et al. Optical studies of the correlation between interface disorder and the photoluminescence line shape in GaAs/InGaP quantum wells. Brazilian Journal of Physics, São Paulo, SBF, v. 32, n. 2A, p. 314-317, 2002. Disponível em: < http://www.sbf.if.usp.br/bjp/Vol32/Num2a/v32_314.pdf > DOI: 10.1590/s0103-97332002000200017.APA
Laureto, E., Meneses, E. A., Carvalho Junior, W., Bernussi, A. A., Ribeiro, E., Silva, E. C. F. da, & Oliveira, J. B. B. de. (2002). Optical studies of the correlation between interface disorder and the photoluminescence line shape in GaAs/InGaP quantum wells. Brazilian Journal of Physics, 32( 2A), 314-317. doi:10.1590/s0103-97332002000200017NLM
Laureto E, Meneses EA, Carvalho Junior W, Bernussi AA, Ribeiro E, Silva ECF da, Oliveira JBB de. Optical studies of the correlation between interface disorder and the photoluminescence line shape in GaAs/InGaP quantum wells [Internet]. Brazilian Journal of Physics. 2002 ; 32( 2A): 314-317.Available from: http://www.sbf.if.usp.br/bjp/Vol32/Num2a/v32_314.pdfVancouver
Laureto E, Meneses EA, Carvalho Junior W, Bernussi AA, Ribeiro E, Silva ECF da, Oliveira JBB de. Optical studies of the correlation between interface disorder and the photoluminescence line shape in GaAs/InGaP quantum wells [Internet]. Brazilian Journal of Physics. 2002 ; 32( 2A): 314-317.Available from: http://www.sbf.if.usp.br/bjp/Vol32/Num2a/v32_314.pdf