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  • In: Superlattices and Microstructures. Unidade: IF

    Subjects: Matéria Condensada, Química

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    • ABNT

      LEVINE, A; SILVA, E C F da; SCOLFARO, L M R; et al. Spatially direct recombinations observed in multiple 'delta'-doped GaAs layers. Superlattices and Microstructures, London, Academic Press, v. 23, n. 2, p. 301-306, 1998.
    • APA

      Levine, A., Silva, E. C. F. da, Scolfaro, L. M. R., Beliaev, D., Quivy, A. A., Enderlein, R., & Leite, J. R. (1998). Spatially direct recombinations observed in multiple 'delta'-doped GaAs layers. Superlattices and Microstructures, 23( 2), 301-306.
    • NLM

      Levine A, Silva ECF da, Scolfaro LMR, Beliaev D, Quivy AA, Enderlein R, Leite JR. Spatially direct recombinations observed in multiple 'delta'-doped GaAs layers. Superlattices and Microstructures. 1998 ; 23( 2): 301-306.
    • Vancouver

      Levine A, Silva ECF da, Scolfaro LMR, Beliaev D, Quivy AA, Enderlein R, Leite JR. Spatially direct recombinations observed in multiple 'delta'-doped GaAs layers. Superlattices and Microstructures. 1998 ; 23( 2): 301-306.
  • In: Semiconductor Science and Technology. Unidade: IF

    Subjects: Engenharia Mecânica, Matéria Condensada, Matéria Condensada

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    • ABNT

      SOARES, J A N T; ENDERLEIN, R; BELIAEV, D; LEITE, J. R.; SAITO, M. Photoreflectance spectra from GaAs HEMT structures reinvestigated: solution of an old controversy. Semiconductor Science and Technology, London, The Institute, v. 13, n. 12, p. 1418-1425, 1998. DOI: 10.1088/0268-1242/13/12/015.
    • APA

      Soares, J. A. N. T., Enderlein, R., Beliaev, D., Leite, J. R., & Saito, M. (1998). Photoreflectance spectra from GaAs HEMT structures reinvestigated: solution of an old controversy. Semiconductor Science and Technology, 13( 12), 1418-1425. doi:10.1088/0268-1242/13/12/015
    • NLM

      Soares JANT, Enderlein R, Beliaev D, Leite JR, Saito M. Photoreflectance spectra from GaAs HEMT structures reinvestigated: solution of an old controversy. Semiconductor Science and Technology. 1998 ; 13( 12): 1418-1425.
    • Vancouver

      Soares JANT, Enderlein R, Beliaev D, Leite JR, Saito M. Photoreflectance spectra from GaAs HEMT structures reinvestigated: solution of an old controversy. Semiconductor Science and Technology. 1998 ; 13( 12): 1418-1425.
  • In: Physica Status Solidi B. Unidade: IF

    Subjects: Matéria Condensada

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    • ABNT

      BELIAEV, D; SCOLFARO, L M R; LEITE, J. R.; SIPAHI, Guilherme Matos. Exchange-correlation effects on a multicomponent isotropic hole gas in semiconductors. Physica Status Solidi B, Berlin, Akademic Verlag, v. 210, n. 2, p. 777-781, 1998.
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      Beliaev, D., Scolfaro, L. M. R., Leite, J. R., & Sipahi, G. M. (1998). Exchange-correlation effects on a multicomponent isotropic hole gas in semiconductors. Physica Status Solidi B, 210( 2), 777-781.
    • NLM

      Beliaev D, Scolfaro LMR, Leite JR, Sipahi GM. Exchange-correlation effects on a multicomponent isotropic hole gas in semiconductors. Physica Status Solidi B. 1998 ; 210( 2): 777-781.
    • Vancouver

      Beliaev D, Scolfaro LMR, Leite JR, Sipahi GM. Exchange-correlation effects on a multicomponent isotropic hole gas in semiconductors. Physica Status Solidi B. 1998 ; 210( 2): 777-781.
  • In: Resumos. Conference title: Encontro Nacional de Fisica da Materia Condensada. Unidade: IF

    Subjects: Matéria Condensada

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    • ABNT

      LEVINE, A; SILVA, E C F; SCOLFARO, L M R; et al. Spatially direct radiative recombinations observed in multiple 'DELTA'-doped'GA''AS' layers. Anais.. Sao Paulo: Sociedade Brasileira de Fisica, 1996.
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      Levine, A., Silva, E. C. F., Scolfaro, L. M. R., Beliaev, D., Quivy, A. A., Enderlein, R., & Leite, J. R. (1996). Spatially direct radiative recombinations observed in multiple 'DELTA'-doped'GA''AS' layers. In Resumos. Sao Paulo: Sociedade Brasileira de Fisica.
    • NLM

      Levine A, Silva ECF, Scolfaro LMR, Beliaev D, Quivy AA, Enderlein R, Leite JR. Spatially direct radiative recombinations observed in multiple 'DELTA'-doped'GA''AS' layers. Resumos. 1996 ;
    • Vancouver

      Levine A, Silva ECF, Scolfaro LMR, Beliaev D, Quivy AA, Enderlein R, Leite JR. Spatially direct radiative recombinations observed in multiple 'DELTA'-doped'GA''AS' layers. Resumos. 1996 ;
  • In: Materials Science & Engineering B. Unidade: IF

    Subjects: Matéria Condensada

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    • ABNT

      SOARES, J A N T; BELIAEV, D; ENDERLEIN, R; et al. Photoreflectance investigations of semiconductor device structures. Materials Science & Engineering B, Lausanne, v. 35, p. 267-72, 1995. DOI: 10.1016/0921-5107(95)01340-7.
    • APA

      Soares, J. A. N. T., Beliaev, D., Enderlein, R., Scolfaro, L. M. R., Saito, M., & Leite, J. R. (1995). Photoreflectance investigations of semiconductor device structures. Materials Science & Engineering B, 35, 267-72. doi:10.1016/0921-5107(95)01340-7
    • NLM

      Soares JANT, Beliaev D, Enderlein R, Scolfaro LMR, Saito M, Leite JR. Photoreflectance investigations of semiconductor device structures. Materials Science & Engineering B. 1995 ;35 267-72.
    • Vancouver

      Soares JANT, Beliaev D, Enderlein R, Scolfaro LMR, Saito M, Leite JR. Photoreflectance investigations of semiconductor device structures. Materials Science & Engineering B. 1995 ;35 267-72.
  • In: Materials Science and Engeneering B. Conference title: International Conference on Low Dimensional Structures and Devices. Unidade: IF

    Subjects: Matéria Condensada

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    • ABNT

      SOARES, J A N T; BELIAEV, D; ENDERLEIN, R; SCOLFARO, L M R; LEITE, J. R. Photoreflectance investigations of semiconductor device structutres. Materials Science and Engeneering B[S.l: s.n.], 1995.
    • APA

      Soares, J. A. N. T., Beliaev, D., Enderlein, R., Scolfaro, L. M. R., & Leite, J. R. (1995). Photoreflectance investigations of semiconductor device structutres. Materials Science and Engeneering B. Cingapura.
    • NLM

      Soares JANT, Beliaev D, Enderlein R, Scolfaro LMR, Leite JR. Photoreflectance investigations of semiconductor device structutres. Materials Science and Engeneering B. 1995 ;35 267-72.
    • Vancouver

      Soares JANT, Beliaev D, Enderlein R, Scolfaro LMR, Leite JR. Photoreflectance investigations of semiconductor device structutres. Materials Science and Engeneering B. 1995 ;35 267-72.
  • In: Physical Review B. Unidade: IF

    Subjects: Matéria Condensada

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    • ABNT

      ENDERLEIN, R; BELIAEV, D; SOARES, J A N T; SCOLFARO, L M R; LEITE, J. R. Method for calculating photo - and electroreflectance spectra from semiconductor heterostructures. Physical Review B, Woodbury, v. 52, p. 2814-22, 1995. DOI: 10.1103/physrevb.52.2814.
    • APA

      Enderlein, R., Beliaev, D., Soares, J. A. N. T., Scolfaro, L. M. R., & Leite, J. R. (1995). Method for calculating photo - and electroreflectance spectra from semiconductor heterostructures. Physical Review B, 52, 2814-22. doi:10.1103/physrevb.52.2814
    • NLM

      Enderlein R, Beliaev D, Soares JANT, Scolfaro LMR, Leite JR. Method for calculating photo - and electroreflectance spectra from semiconductor heterostructures. Physical Review B. 1995 ;52 2814-22.
    • Vancouver

      Enderlein R, Beliaev D, Soares JANT, Scolfaro LMR, Leite JR. Method for calculating photo - and electroreflectance spectra from semiconductor heterostructures. Physical Review B. 1995 ;52 2814-22.
  • In: Solid State Communications. Unidade: IF

    Subjects: Matéria Condensada

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    • ABNT

      SCOLFARO, L M R; BELIAEV, D; ENDERLEIN, R; LEITE, J. R. Energy levels due to n-type'GAMA'-doping in silicon. Solid State Communications, New York, v. 93, p. 469-9, 1995.
    • APA

      Scolfaro, L. M. R., Beliaev, D., Enderlein, R., & Leite, J. R. (1995). Energy levels due to n-type'GAMA'-doping in silicon. Solid State Communications, 93, 469-9.
    • NLM

      Scolfaro LMR, Beliaev D, Enderlein R, Leite JR. Energy levels due to n-type'GAMA'-doping in silicon. Solid State Communications. 1995 ;93 469-9.
    • Vancouver

      Scolfaro LMR, Beliaev D, Enderlein R, Leite JR. Energy levels due to n-type'GAMA'-doping in silicon. Solid State Communications. 1995 ;93 469-9.
  • In: Materials Science & Engineering B. Unidade: IF

    Subjects: Matéria Condensada

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    • ABNT

      LEITE, J. R.; RODRIGUES, S C P; SCOLFARO, L M R; et al. Electrical conductivity of 'DELTA' doping superlattices parallel to the growth direction. Materials Science & Engineering B, Lausanne, v. 35, p. 250-5, 1995.
    • APA

      Leite, J. R., Rodrigues, S. C. P., Scolfaro, L. M. R., Enderlein, R., Beliaev, D., & Quivy, A. A. (1995). Electrical conductivity of 'DELTA' doping superlattices parallel to the growth direction. Materials Science & Engineering B, 35, 250-5.
    • NLM

      Leite JR, Rodrigues SCP, Scolfaro LMR, Enderlein R, Beliaev D, Quivy AA. Electrical conductivity of 'DELTA' doping superlattices parallel to the growth direction. Materials Science & Engineering B. 1995 ;35 250-5.
    • Vancouver

      Leite JR, Rodrigues SCP, Scolfaro LMR, Enderlein R, Beliaev D, Quivy AA. Electrical conductivity of 'DELTA' doping superlattices parallel to the growth direction. Materials Science & Engineering B. 1995 ;35 250-5.
  • In: Materials Science and Engeneering B. Conference title: International Conference on Low Dimensional Structures and Devices. Unidade: IF

    Subjects: Matéria Condensada

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    • ABNT

      LEITE, J. R.; RODRIGUES, S C P; SCOLFARO, L M R; et al. Electrical conductivity of 'GAMA'-doping superlattices parallel to the growth direction. Materials Science and Engeneering B[S.l: s.n.], 1995.
    • APA

      Leite, J. R., Rodrigues, S. C. P., Scolfaro, L. M. R., Enderlein, R., Beliaev, D., & Quivy, A. A. (1995). Electrical conductivity of 'GAMA'-doping superlattices parallel to the growth direction. Materials Science and Engeneering B. Cingapura.
    • NLM

      Leite JR, Rodrigues SCP, Scolfaro LMR, Enderlein R, Beliaev D, Quivy AA. Electrical conductivity of 'GAMA'-doping superlattices parallel to the growth direction. Materials Science and Engeneering B. 1995 ;35 250-5.
    • Vancouver

      Leite JR, Rodrigues SCP, Scolfaro LMR, Enderlein R, Beliaev D, Quivy AA. Electrical conductivity of 'GAMA'-doping superlattices parallel to the growth direction. Materials Science and Engeneering B. 1995 ;35 250-5.
  • In: Brazilian Journal of Physics. Unidade: IF

    Subjects: Matéria Condensada

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    • ABNT

      BELIAEV, D; SCOLFARO, L M R; LEITE, J. R. Theoretical investigation of differential photoreflectance spectra from planar-doped layers in semiconductors. Brazilian Journal of Physics, São Paulo, v. 24, n. 1 , p. 270-3, 1994.
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      Beliaev, D., Scolfaro, L. M. R., & Leite, J. R. (1994). Theoretical investigation of differential photoreflectance spectra from planar-doped layers in semiconductors. Brazilian Journal of Physics, 24( 1 ), 270-3.
    • NLM

      Beliaev D, Scolfaro LMR, Leite JR. Theoretical investigation of differential photoreflectance spectra from planar-doped layers in semiconductors. Brazilian Journal of Physics. 1994 ;24( 1 ): 270-3.
    • Vancouver

      Beliaev D, Scolfaro LMR, Leite JR. Theoretical investigation of differential photoreflectance spectra from planar-doped layers in semiconductors. Brazilian Journal of Physics. 1994 ;24( 1 ): 270-3.
  • In: Resumos. Conference title: Encontro Nacional de Fisica da Materia Condensada. Unidade: IF

    Subjects: Matéria Condensada

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    • ABNT

      SCOLFARO, L M R; BELIAEV, D; ENDERLEIN, R; LEITE, J. R. Estrutura eletronica de multiplas camadas e super-redes 'GAMA'. Doping em 'SI'. Anais.. São Paulo: Sociedade Brasileira de Fisica, 1994.
    • APA

      Scolfaro, L. M. R., Beliaev, D., Enderlein, R., & Leite, J. R. (1994). Estrutura eletronica de multiplas camadas e super-redes 'GAMA'. Doping em 'SI'. In Resumos. São Paulo: Sociedade Brasileira de Fisica.
    • NLM

      Scolfaro LMR, Beliaev D, Enderlein R, Leite JR. Estrutura eletronica de multiplas camadas e super-redes 'GAMA'. Doping em 'SI'. Resumos. 1994 ;
    • Vancouver

      Scolfaro LMR, Beliaev D, Enderlein R, Leite JR. Estrutura eletronica de multiplas camadas e super-redes 'GAMA'. Doping em 'SI'. Resumos. 1994 ;
  • In: Superlattices and Microstructures. Unidade: IF

    Subjects: Matéria Condensada

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    • ABNT

      BELIAEV, D; ENDERLEIN, R; SOARES, J A N T; et al. Photo and electroreflectance spectra from spatially inhomogeneous heterostructures calculated by means of a new method. Superlattices and Microstructures, London, v. 15, n. 3 , p. 339-43, 1994. DOI: 10.1006/spmi.1994.1066.
    • APA

      Beliaev, D., Enderlein, R., Soares, J. A. N. T., Scolfaro, L. M. R., Ceschin, A. M., Quivy, A. A., & Leite, J. R. (1994). Photo and electroreflectance spectra from spatially inhomogeneous heterostructures calculated by means of a new method. Superlattices and Microstructures, 15( 3 ), 339-43. doi:10.1006/spmi.1994.1066
    • NLM

      Beliaev D, Enderlein R, Soares JANT, Scolfaro LMR, Ceschin AM, Quivy AA, Leite JR. Photo and electroreflectance spectra from spatially inhomogeneous heterostructures calculated by means of a new method. Superlattices and Microstructures. 1994 ;15( 3 ): 339-43.
    • Vancouver

      Beliaev D, Enderlein R, Soares JANT, Scolfaro LMR, Ceschin AM, Quivy AA, Leite JR. Photo and electroreflectance spectra from spatially inhomogeneous heterostructures calculated by means of a new method. Superlattices and Microstructures. 1994 ;15( 3 ): 339-43.
  • In: Materials Science Forum. Unidade: IF

    Subjects: Matéria Condensada

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    • ABNT

      SCOLFARO, L M R; LEITE, J. R.; MENDONCA, C A C; et al. Electronic states of n-type 'DELTA'-doping in 'GA''AS' heterostructures. Materials Science Forum, Swizerland, v. 143-7, p. 669-74, 1994.
    • APA

      Scolfaro, L. M. R., Leite, J. R., Mendonca, C. A. C., Beliaev, D., Shibli, S. M., Silva, E. C. F., & Meneses, E. A. (1994). Electronic states of n-type 'DELTA'-doping in 'GA''AS' heterostructures. Materials Science Forum, 143-7, 669-74.
    • NLM

      Scolfaro LMR, Leite JR, Mendonca CAC, Beliaev D, Shibli SM, Silva ECF, Meneses EA. Electronic states of n-type 'DELTA'-doping in 'GA''AS' heterostructures. Materials Science Forum. 1994 ;143-7 669-74.
    • Vancouver

      Scolfaro LMR, Leite JR, Mendonca CAC, Beliaev D, Shibli SM, Silva ECF, Meneses EA. Electronic states of n-type 'DELTA'-doping in 'GA''AS' heterostructures. Materials Science Forum. 1994 ;143-7 669-74.
  • In: Physical Review B. Unidade: IF

    Subjects: Matéria Condensada

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    • ABNT

      SCOLFARO, L M R; BELIAEV, D; ENDERLEIN, R; LEITE, J. R. Electronic structure of n-type 'DELTA'-doping multiple layers and superlattices in silicon. Physical Review B, New York, v. 50, n. 12, p. 8699-705, 1994.
    • APA

      Scolfaro, L. M. R., Beliaev, D., Enderlein, R., & Leite, J. R. (1994). Electronic structure of n-type 'DELTA'-doping multiple layers and superlattices in silicon. Physical Review B, 50( 12), 8699-705.
    • NLM

      Scolfaro LMR, Beliaev D, Enderlein R, Leite JR. Electronic structure of n-type 'DELTA'-doping multiple layers and superlattices in silicon. Physical Review B. 1994 ;50( 12): 8699-705.
    • Vancouver

      Scolfaro LMR, Beliaev D, Enderlein R, Leite JR. Electronic structure of n-type 'DELTA'-doping multiple layers and superlattices in silicon. Physical Review B. 1994 ;50( 12): 8699-705.
  • In: Resumos. Conference title: Encontro Nacional de Fisica da Materia Condensada. Unidade: IF

    Subjects: Matéria Condensada

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    • ABNT

      LINO, A T; TAKAHASHI, E K; SCOLFARO, L M R; BELIAEV, D; LEITE, J. R. Analise sistematica das propriedades eletronicas de estruturas delta-dopadas em semicondutores. Anais.. São Paulo: Sociedade Brasileira de Fisica, 1994.
    • APA

      Lino, A. T., Takahashi, E. K., Scolfaro, L. M. R., Beliaev, D., & Leite, J. R. (1994). Analise sistematica das propriedades eletronicas de estruturas delta-dopadas em semicondutores. In Resumos. São Paulo: Sociedade Brasileira de Fisica.
    • NLM

      Lino AT, Takahashi EK, Scolfaro LMR, Beliaev D, Leite JR. Analise sistematica das propriedades eletronicas de estruturas delta-dopadas em semicondutores. Resumos. 1994 ;
    • Vancouver

      Lino AT, Takahashi EK, Scolfaro LMR, Beliaev D, Leite JR. Analise sistematica das propriedades eletronicas de estruturas delta-dopadas em semicondutores. Resumos. 1994 ;
  • In: Physical Review B. Unidade: IF

    Subjects: Matéria Condensada

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    • ABNT

      MENDONCA, C A C; PLENTZ, F; OLIVEIRA, J. B. B.; et al. Evidence of a two-dimensional to three-dimensional transition in 'SI' 'DELTA'-doped 'GA''AS' structures. Physical Review B, New York, v. 48, n. 16, p. 12316, 1993.
    • APA

      Mendonca, C. A. C., Plentz, F., Oliveira, J. B. B., Meneses, E. A., Scolfaro, L. M. R., Beliaev, D., et al. (1993). Evidence of a two-dimensional to three-dimensional transition in 'SI' 'DELTA'-doped 'GA''AS' structures. Physical Review B, 48( 16), 12316.
    • NLM

      Mendonca CAC, Plentz F, Oliveira JBB, Meneses EA, Scolfaro LMR, Beliaev D, Shibli SM, Leite JR. Evidence of a two-dimensional to three-dimensional transition in 'SI' 'DELTA'-doped 'GA''AS' structures. Physical Review B. 1993 ;48( 16): 12316.
    • Vancouver

      Mendonca CAC, Plentz F, Oliveira JBB, Meneses EA, Scolfaro LMR, Beliaev D, Shibli SM, Leite JR. Evidence of a two-dimensional to three-dimensional transition in 'SI' 'DELTA'-doped 'GA''AS' structures. Physical Review B. 1993 ;48( 16): 12316.
  • In: Semiconductor Science and Technology. Unidade: IF

    Subjects: Matéria Condensada

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    • ABNT

      BELIAEV, D; SCOLFARO, L M R; LEITE, J. R. New theoretical model for optical transitions in the photoreflectance spectrum from 'GHAMA'-doped structures. Semiconductor Science and Technology[S.l.], v. 8 , p. 1479, 1993.
    • APA

      Beliaev, D., Scolfaro, L. M. R., & Leite, J. R. (1993). New theoretical model for optical transitions in the photoreflectance spectrum from 'GHAMA'-doped structures. Semiconductor Science and Technology, 8 , 1479.
    • NLM

      Beliaev D, Scolfaro LMR, Leite JR. New theoretical model for optical transitions in the photoreflectance spectrum from 'GHAMA'-doped structures. Semiconductor Science and Technology. 1993 ;8 1479.
    • Vancouver

      Beliaev D, Scolfaro LMR, Leite JR. New theoretical model for optical transitions in the photoreflectance spectrum from 'GHAMA'-doped structures. Semiconductor Science and Technology. 1993 ;8 1479.


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