Microcrystalline silicon with high electron field-effect mobility deposited at '230 GRAUS' (2000)
Source: Journal of Non-Crystalline Solids. Conference titles: International Conference on Amorphous and Microcrystalline Semiconductors - Science and Technology. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
ABNT
MULATO, M. et al. Microcrystalline silicon with high electron field-effect mobility deposited at '230 GRAUS'. Journal of Non-Crystalline Solids. Amsterdam: Instituto de Física de São Carlos, Universidade de São Paulo. Disponível em: http://probe.usp.br/cgi-bin/sciserv.pl?collection=journals&journal=00223093&issue=v266-269inone&article=1260_mswhefmda2&form=pdf&file=file.pdf. Acesso em: 01 out. 2024. , 2000APA
Mulato, M., Chen, Y., Wagner, S., & Zanatta, A. R. (2000). Microcrystalline silicon with high electron field-effect mobility deposited at '230 GRAUS'. Journal of Non-Crystalline Solids. Amsterdam: Instituto de Física de São Carlos, Universidade de São Paulo. Recuperado de http://probe.usp.br/cgi-bin/sciserv.pl?collection=journals&journal=00223093&issue=v266-269inone&article=1260_mswhefmda2&form=pdf&file=file.pdfNLM
Mulato M, Chen Y, Wagner S, Zanatta AR. Microcrystalline silicon with high electron field-effect mobility deposited at '230 GRAUS' [Internet]. Journal of Non-Crystalline Solids. 2000 ; 266-269 1260-1264.[citado 2024 out. 01 ] Available from: http://probe.usp.br/cgi-bin/sciserv.pl?collection=journals&journal=00223093&issue=v266-269inone&article=1260_mswhefmda2&form=pdf&file=file.pdfVancouver
Mulato M, Chen Y, Wagner S, Zanatta AR. Microcrystalline silicon with high electron field-effect mobility deposited at '230 GRAUS' [Internet]. Journal of Non-Crystalline Solids. 2000 ; 266-269 1260-1264.[citado 2024 out. 01 ] Available from: http://probe.usp.br/cgi-bin/sciserv.pl?collection=journals&journal=00223093&issue=v266-269inone&article=1260_mswhefmda2&form=pdf&file=file.pdf