Hole mobility in zincblende c-GaN (2004)
Source: Journal of Applied Physics. Unidade: IF
Subjects: SEMICONDUTORES, TERMODINÂMICA
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RODRIGUES, C G et al. Hole mobility in zincblende c-GaN. Journal of Applied Physics, 2004Tradução . . Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000095000009004914000001&idtype=cvips. Acesso em: 11 out. 2024.APA
Rodrigues, C. G., Fernandez, J. R. L., Leite, J. R., Chitta, V. A., Freire, V. N., Vasconcellos, A. R., & Luzzi, R. (2004). Hole mobility in zincblende c-GaN. Journal of Applied Physics. Recuperado de http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000095000009004914000001&idtype=cvipsNLM
Rodrigues CG, Fernandez JRL, Leite JR, Chitta VA, Freire VN, Vasconcellos AR, Luzzi R. Hole mobility in zincblende c-GaN [Internet]. Journal of Applied Physics. 2004 ;[citado 2024 out. 11 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000095000009004914000001&idtype=cvipsVancouver
Rodrigues CG, Fernandez JRL, Leite JR, Chitta VA, Freire VN, Vasconcellos AR, Luzzi R. Hole mobility in zincblende c-GaN [Internet]. Journal of Applied Physics. 2004 ;[citado 2024 out. 11 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000095000009004914000001&idtype=cvips
