Source: Journal of Crystal Growth. Unidade: IF
Subjects: FOTOLUMINESCÊNCIA, MICROSCOPIA ELETRÔNICA DE VARREDURA
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MARTINI, S. et al. Step bunching in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs(001) vicinal surfaces. Journal of Crystal Growth, v. 227, p. 46-50, 2001Tradução . . Disponível em: https://doi.org/10.1016/s0022-0248(01)00630-3. Acesso em: 27 set. 2024.APA
Martini, S., Quivy, A. A., Ugarte, D., Lange, C., Richter, W., & Tokranov, V. E. (2001). Step bunching in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs(001) vicinal surfaces. Journal of Crystal Growth, 227, 46-50. doi:10.1016/s0022-0248(01)00630-3NLM
Martini S, Quivy AA, Ugarte D, Lange C, Richter W, Tokranov VE. Step bunching in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs(001) vicinal surfaces [Internet]. Journal of Crystal Growth. 2001 ; 227 46-50.[citado 2024 set. 27 ] Available from: https://doi.org/10.1016/s0022-0248(01)00630-3Vancouver
Martini S, Quivy AA, Ugarte D, Lange C, Richter W, Tokranov VE. Step bunching in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs(001) vicinal surfaces [Internet]. Journal of Crystal Growth. 2001 ; 227 46-50.[citado 2024 set. 27 ] Available from: https://doi.org/10.1016/s0022-0248(01)00630-3
