Quantum confinement effects on the dielectric constant of porous silicon (1993)
Source: Materials Research Society Symposium Proceedings. Conference titles: MRS Fall Meeting. Unidade: IFQSC
Assunto: DIELÉTRICOS
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ABNT
TSU, R. et al. Quantum confinement effects on the dielectric constant of porous silicon. 1993, Anais.. Pittsburgh: Materials Research Society - MRS, 1993. Disponível em: https://doi.org/10.1557/PROC-283-437. Acesso em: 10 ago. 2024.APA
Tsu, R., Ioriatti Júnior, L. C., Harvey, J. F., Shen, H., & Lux, R. A. (1993). Quantum confinement effects on the dielectric constant of porous silicon. In Materials Research Society Symposium Proceedings (Vol. 283). Pittsburgh: Materials Research Society - MRS. doi:10.1557/PROC-283-437NLM
Tsu R, Ioriatti Júnior LC, Harvey JF, Shen H, Lux RA. Quantum confinement effects on the dielectric constant of porous silicon [Internet]. Materials Research Society Symposium Proceedings. 1993 ; 283[citado 2024 ago. 10 ] Available from: https://doi.org/10.1557/PROC-283-437Vancouver
Tsu R, Ioriatti Júnior LC, Harvey JF, Shen H, Lux RA. Quantum confinement effects on the dielectric constant of porous silicon [Internet]. Materials Research Society Symposium Proceedings. 1993 ; 283[citado 2024 ago. 10 ] Available from: https://doi.org/10.1557/PROC-283-437
