InAs/InGaAs/InP structures for quantum dot infrared photodectors grown by MOVPE (2004)
Source: Program and Abstracts. Conference titles: The Internacional Conference on Superlattices, Nano-structures and Nano-devices - ICSNN. Unidade: IFSC
Assunto: SEMICONDUTORES
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LANDI, S. M. et al. InAs/InGaAs/InP structures for quantum dot infrared photodectors grown by MOVPE. 2004, Anais.. Cancún: Instituto de Física de São Carlos, Universidade de São Paulo, 2004. . Acesso em: 19 ago. 2024.APA
Landi, S. M., Pires, M. P., Tribuzy, C. V. -B., Souza, P. L., Marega Júnior, E., & Guimaraes, P. S. S. (2004). InAs/InGaAs/InP structures for quantum dot infrared photodectors grown by MOVPE. In Program and Abstracts. Cancún: Instituto de Física de São Carlos, Universidade de São Paulo.NLM
Landi SM, Pires MP, Tribuzy CV-B, Souza PL, Marega Júnior E, Guimaraes PSS. InAs/InGaAs/InP structures for quantum dot infrared photodectors grown by MOVPE. Program and Abstracts. 2004 ;[citado 2024 ago. 19 ]Vancouver
Landi SM, Pires MP, Tribuzy CV-B, Souza PL, Marega Júnior E, Guimaraes PSS. InAs/InGaAs/InP structures for quantum dot infrared photodectors grown by MOVPE. Program and Abstracts. 2004 ;[citado 2024 ago. 19 ]