InAs quantum dots over InGaAs for infrared photodetectors (2004)
Source: Journal of Crystal Growth. Conference titles: International Conference on Metalorganic Vapor Phase Epitaxy. Unidade: IFSC
Assunto: SEMICONDUTORES
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PIRES, M. P. et al. InAs quantum dots over InGaAs for infrared photodetectors. Journal of Crystal Growth. Amsterdam: Elsevier Science. . Acesso em: 28 set. 2024. , 2004APA
Pires, M. P., Landi, S. M., Tribuzy, C. V. B., Nunes, L. A. de O., Marega Júnior, E., & Souza, P. L. (2004). InAs quantum dots over InGaAs for infrared photodetectors. Journal of Crystal Growth. Amsterdam: Elsevier Science.NLM
Pires MP, Landi SM, Tribuzy CVB, Nunes LA de O, Marega Júnior E, Souza PL. InAs quantum dots over InGaAs for infrared photodetectors. Journal of Crystal Growth. 2004 ; 272 192-197.[citado 2024 set. 28 ]Vancouver
Pires MP, Landi SM, Tribuzy CVB, Nunes LA de O, Marega Júnior E, Souza PL. InAs quantum dots over InGaAs for infrared photodetectors. Journal of Crystal Growth. 2004 ; 272 192-197.[citado 2024 set. 28 ]