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  • Source: Surface Science. Unidade: IF

    Assunto: SILÍCIO

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      MIOTTO, R. e SRIVASTAVA, G P e FERRAZ, A. C. Methanol adsorption on silicon (001). Surface Science, v. 575, p. 287-299, 2005Tradução . . Disponível em: https://doi.org/10.1016/j.susc.2004.11.041. Acesso em: 30 set. 2024.
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      Miotto, R., Srivastava, G. P., & Ferraz, A. C. (2005). Methanol adsorption on silicon (001). Surface Science, 575, 287-299. doi:10.1016/j.susc.2004.11.041
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      Miotto R, Srivastava GP, Ferraz AC. Methanol adsorption on silicon (001) [Internet]. Surface Science. 2005 ; 575 287-299.[citado 2024 set. 30 ] Available from: https://doi.org/10.1016/j.susc.2004.11.041
    • Vancouver

      Miotto R, Srivastava GP, Ferraz AC. Methanol adsorption on silicon (001) [Internet]. Surface Science. 2005 ; 575 287-299.[citado 2024 set. 30 ] Available from: https://doi.org/10.1016/j.susc.2004.11.041
  • Source: Brazilian Journal of Physics. Unidade: IF

    Subjects: FÍSICA, MATÉRIA CONDENSADA, SEMICONDUTORES

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      MIOTTO, R e FERRAZ, A. C. e SRIVASTAVA, G P. Adsorption of 'C IND. 2''H IND. 2'-'C IND.2''O IND. 3' on Si(001). Brazilian Journal of Physics, 2004Tradução . . Disponível em: http://www.sbfisica.org.br/bjp/Vol34/Num2b/v34_563.pdf. Acesso em: 30 set. 2024.
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      Miotto, R., Ferraz, A. C., & Srivastava, G. P. (2004). Adsorption of 'C IND. 2''H IND. 2'-'C IND.2''O IND. 3' on Si(001). Brazilian Journal of Physics. Recuperado de http://www.sbfisica.org.br/bjp/Vol34/Num2b/v34_563.pdf
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      Miotto R, Ferraz AC, Srivastava GP. Adsorption of 'C IND. 2''H IND. 2'-'C IND.2''O IND. 3' on Si(001) [Internet]. Brazilian Journal of Physics. 2004 ;[citado 2024 set. 30 ] Available from: http://www.sbfisica.org.br/bjp/Vol34/Num2b/v34_563.pdf
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      Miotto R, Ferraz AC, Srivastava GP. Adsorption of 'C IND. 2''H IND. 2'-'C IND.2''O IND. 3' on Si(001) [Internet]. Brazilian Journal of Physics. 2004 ;[citado 2024 set. 30 ] Available from: http://www.sbfisica.org.br/bjp/Vol34/Num2b/v34_563.pdf
  • Source: Book of Abstracts. Conference titles: Brazilian Workshop on Semiconductor Physics. Unidade: IF

    Subjects: SEMICONDUTORES, SUPERFÍCIE FÍSICA

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      MIOTTO, R e FERRAZ, A. C. e SRIVASTAVA, G P. Adsorption of maleic anhydride on the silicon (001) surface. 2003, Anais.. Fortaleza: DF/UFC, 2003. . Acesso em: 30 set. 2024.
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      Miotto, R., Ferraz, A. C., & Srivastava, G. P. (2003). Adsorption of maleic anhydride on the silicon (001) surface. In Book of Abstracts. Fortaleza: DF/UFC.
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      Miotto R, Ferraz AC, Srivastava GP. Adsorption of maleic anhydride on the silicon (001) surface. Book of Abstracts. 2003 ;[citado 2024 set. 30 ]
    • Vancouver

      Miotto R, Ferraz AC, Srivastava GP. Adsorption of maleic anhydride on the silicon (001) surface. Book of Abstracts. 2003 ;[citado 2024 set. 30 ]
  • Source: Physical Review B. Unidade: IF

    Subjects: ESTRUTURA ELETRÔNICA, SUPERFÍCIE FÍSICA

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      MIWA, Roberto Hiroki et al. Ab initio study of the GaAs(001)-In(4 X 2) surface. Physical Review B, v. 67, n. 4, p. 045325/1-045325/5, 2003Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000067000004045325000001&idtype=cvips. Acesso em: 30 set. 2024.
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      Miwa, R. H., Miotto, R., Ferraz, A. C., & Srivastava, G. P. (2003). Ab initio study of the GaAs(001)-In(4 X 2) surface. Physical Review B, 67( 4), 045325/1-045325/5. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000067000004045325000001&idtype=cvips
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      Miwa RH, Miotto R, Ferraz AC, Srivastava GP. Ab initio study of the GaAs(001)-In(4 X 2) surface [Internet]. Physical Review B. 2003 ; 67( 4): 045325/1-045325/5.[citado 2024 set. 30 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000067000004045325000001&idtype=cvips
    • Vancouver

      Miwa RH, Miotto R, Ferraz AC, Srivastava GP. Ab initio study of the GaAs(001)-In(4 X 2) surface [Internet]. Physical Review B. 2003 ; 67( 4): 045325/1-045325/5.[citado 2024 set. 30 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000067000004045325000001&idtype=cvips
  • Source: Physical Review B. Unidade: IF

    Subjects: SUPERFÍCIE FÍSICA, ESTRUTURA ELETRÔNICA

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      MIOTTO, R. e FERRAZ, A. C. e SRIVASTAVA, G P. Acetylene adsorption on the Si(001) surface. Physical Review B, v. 65, n. 7, p. 75401/1-75401/11, 2002Tradução . . Disponível em: https://doi.org/10.1103/physrevb.65.075401. Acesso em: 30 set. 2024.
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      Miotto, R., Ferraz, A. C., & Srivastava, G. P. (2002). Acetylene adsorption on the Si(001) surface. Physical Review B, 65( 7), 75401/1-75401/11. doi:10.1103/physrevb.65.075401
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      Miotto R, Ferraz AC, Srivastava GP. Acetylene adsorption on the Si(001) surface [Internet]. Physical Review B. 2002 ; 65( 7): 75401/1-75401/11.[citado 2024 set. 30 ] Available from: https://doi.org/10.1103/physrevb.65.075401
    • Vancouver

      Miotto R, Ferraz AC, Srivastava GP. Acetylene adsorption on the Si(001) surface [Internet]. Physical Review B. 2002 ; 65( 7): 75401/1-75401/11.[citado 2024 set. 30 ] Available from: https://doi.org/10.1103/physrevb.65.075401
  • Source: Surface Science. Unidade: IF

    Assunto: SUPERFÍCIE FÍSICA

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      MIOTTO, R e FERRAZ, A. C. e SRIVASTAVA, G P. Comparative study of the adsorption of 'C IND.2' 'H IND.4' on the Si(001) and Ge(001) surfaces. Surface Science, v. 507, p. 12-17, 2002Tradução . . Disponível em: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5546&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=12cc7163887b9327838c19187cdddd51. Acesso em: 30 set. 2024.
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      Miotto, R., Ferraz, A. C., & Srivastava, G. P. (2002). Comparative study of the adsorption of 'C IND.2' 'H IND.4' on the Si(001) and Ge(001) surfaces. Surface Science, 507, 12-17. Recuperado de http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5546&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=12cc7163887b9327838c19187cdddd51
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      Miotto R, Ferraz AC, Srivastava GP. Comparative study of the adsorption of 'C IND.2' 'H IND.4' on the Si(001) and Ge(001) surfaces [Internet]. Surface Science. 2002 ; 507 12-17.[citado 2024 set. 30 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5546&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=12cc7163887b9327838c19187cdddd51
    • Vancouver

      Miotto R, Ferraz AC, Srivastava GP. Comparative study of the adsorption of 'C IND.2' 'H IND.4' on the Si(001) and Ge(001) surfaces [Internet]. Surface Science. 2002 ; 507 12-17.[citado 2024 set. 30 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5546&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=12cc7163887b9327838c19187cdddd51
  • Source: Journal of Chemical Physics. Unidade: IF

    Subjects: MICROSCOPIA, FEIXES, ABSORÇÃO, SUPERFÍCIE FÍSICA

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      MIOTTO, R. et al. Comparative study of dissociative adsorption of 'NH IND.3', 'PH IND.3', and 'AsH IND.3' on Si(001)-(2X1). Journal of Chemical Physics, v. 114, n. 21, p. 9549-9556, 2001Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JCPSA6000114000021009549000001&idtype=cvips. Acesso em: 30 set. 2024.
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      Miotto, R., Srivastava, G. P., Miwa, R. H., & Ferraz, A. C. (2001). Comparative study of dissociative adsorption of 'NH IND.3', 'PH IND.3', and 'AsH IND.3' on Si(001)-(2X1). Journal of Chemical Physics, 114( 21), 9549-9556. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JCPSA6000114000021009549000001&idtype=cvips
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      Miotto R, Srivastava GP, Miwa RH, Ferraz AC. Comparative study of dissociative adsorption of 'NH IND.3', 'PH IND.3', and 'AsH IND.3' on Si(001)-(2X1) [Internet]. Journal of Chemical Physics. 2001 ; 114( 21): 9549-9556.[citado 2024 set. 30 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JCPSA6000114000021009549000001&idtype=cvips
    • Vancouver

      Miotto R, Srivastava GP, Miwa RH, Ferraz AC. Comparative study of dissociative adsorption of 'NH IND.3', 'PH IND.3', and 'AsH IND.3' on Si(001)-(2X1) [Internet]. Journal of Chemical Physics. 2001 ; 114( 21): 9549-9556.[citado 2024 set. 30 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JCPSA6000114000021009549000001&idtype=cvips
  • Source: Surface Science. Unidade: IF

    Subjects: SUPERFÍCIE FÍSICA, ADSORÇÃO, QUÍMICA DE SUPERFÍCIE, FÍSICA DA MATÉRIA CONDENSADA

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      MIOTTO, R. e SRIVASTAVA, G P e FERRAZ, A. C. First-principles calculations of the adsorption and dissociation of 'PH IND.3' on Si(001)-(2 X 1). Surface Science, v. 482, p. 160-165, 2001Tradução . . Disponível em: http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=00396028&issue=v482-485inone_p1&article=160_fcotaadopos&form=pdf&file=file.pdf. Acesso em: 30 set. 2024.
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      Miotto, R., Srivastava, G. P., & Ferraz, A. C. (2001). First-principles calculations of the adsorption and dissociation of 'PH IND.3' on Si(001)-(2 X 1). Surface Science, 482, 160-165. Recuperado de http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=00396028&issue=v482-485inone_p1&article=160_fcotaadopos&form=pdf&file=file.pdf
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      Miotto R, Srivastava GP, Ferraz AC. First-principles calculations of the adsorption and dissociation of 'PH IND.3' on Si(001)-(2 X 1) [Internet]. Surface Science. 2001 ; 482 160-165.[citado 2024 set. 30 ] Available from: http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=00396028&issue=v482-485inone_p1&article=160_fcotaadopos&form=pdf&file=file.pdf
    • Vancouver

      Miotto R, Srivastava GP, Ferraz AC. First-principles calculations of the adsorption and dissociation of 'PH IND.3' on Si(001)-(2 X 1) [Internet]. Surface Science. 2001 ; 482 160-165.[citado 2024 set. 30 ] Available from: http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=00396028&issue=v482-485inone_p1&article=160_fcotaadopos&form=pdf&file=file.pdf
  • Source: Physical Review B. Unidade: IF

    Assunto: MATÉRIA CONDENSADA

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      MIOTTO, R. e SRIVASTAVA, G P e FERRAZ, A. C. Dissociative adsorption of 'PH IND.3' on the Si(001) surface. Physical Review B, v. 63, n. 12, p. 5321/1-5321/9, 2001Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000063000012125321000001&idtype=cvips. Acesso em: 30 set. 2024.
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      Miotto, R., Srivastava, G. P., & Ferraz, A. C. (2001). Dissociative adsorption of 'PH IND.3' on the Si(001) surface. Physical Review B, 63( 12), 5321/1-5321/9. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000063000012125321000001&idtype=cvips
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      Miotto R, Srivastava GP, Ferraz AC. Dissociative adsorption of 'PH IND.3' on the Si(001) surface [Internet]. Physical Review B. 2001 ; 63( 12): 5321/1-5321/9.[citado 2024 set. 30 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000063000012125321000001&idtype=cvips
    • Vancouver

      Miotto R, Srivastava GP, Ferraz AC. Dissociative adsorption of 'PH IND.3' on the Si(001) surface [Internet]. Physical Review B. 2001 ; 63( 12): 5321/1-5321/9.[citado 2024 set. 30 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000063000012125321000001&idtype=cvips
  • Source: Surface Science. Unidade: IF

    Assunto: MATÉRIA CONDENSADA

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      MIOTTO, R. e FERRAZ, A. C. e SRIVASTAVA, G P. Dissociative adsorption of 'NF IND.3' on Si(001)-(2 X 1). Surface Science, v. 454, p. 152-156, 2000Tradução . . Disponível em: http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=00396028&issue=v454i0006&article=152_daonos&form=pdf&file=file.pdf. Acesso em: 30 set. 2024.
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      Miotto, R., Ferraz, A. C., & Srivastava, G. P. (2000). Dissociative adsorption of 'NF IND.3' on Si(001)-(2 X 1). Surface Science, 454, 152-156. Recuperado de http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=00396028&issue=v454i0006&article=152_daonos&form=pdf&file=file.pdf
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      Miotto R, Ferraz AC, Srivastava GP. Dissociative adsorption of 'NF IND.3' on Si(001)-(2 X 1) [Internet]. Surface Science. 2000 ; 454 152-156.[citado 2024 set. 30 ] Available from: http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=00396028&issue=v454i0006&article=152_daonos&form=pdf&file=file.pdf
    • Vancouver

      Miotto R, Ferraz AC, Srivastava GP. Dissociative adsorption of 'NF IND.3' on Si(001)-(2 X 1) [Internet]. Surface Science. 2000 ; 454 152-156.[citado 2024 set. 30 ] Available from: http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=00396028&issue=v454i0006&article=152_daonos&form=pdf&file=file.pdf
  • Source: Physical Review B. Unidade: IF

    Assunto: MATÉRIA CONDENSADA

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      MIOTTO, R. e SRIVASTAVA, G P e FERRAZ, A. C. Theoretical studies of the initial stages of Zn adsorption on GaAs(001)-(2X4). Physical Review B, v. 62, n. 20, p. 13623-13630, 2000Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000062000020013623000001&idtype=cvips. Acesso em: 30 set. 2024.
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      Miotto, R., Srivastava, G. P., & Ferraz, A. C. (2000). Theoretical studies of the initial stages of Zn adsorption on GaAs(001)-(2X4). Physical Review B, 62( 20), 13623-13630. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000062000020013623000001&idtype=cvips
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      Miotto R, Srivastava GP, Ferraz AC. Theoretical studies of the initial stages of Zn adsorption on GaAs(001)-(2X4) [Internet]. Physical Review B. 2000 ; 62( 20): 13623-13630.[citado 2024 set. 30 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000062000020013623000001&idtype=cvips
    • Vancouver

      Miotto R, Srivastava GP, Ferraz AC. Theoretical studies of the initial stages of Zn adsorption on GaAs(001)-(2X4) [Internet]. Physical Review B. 2000 ; 62( 20): 13623-13630.[citado 2024 set. 30 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000062000020013623000001&idtype=cvips
  • Source: Solid State Communications. Unidade: IF

    Assunto: MATÉRIA CONDENSADA

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      MIOTTO, R. e FERRAZ, A. C. e SRIVASTAVA, G P. III-N(110) surface relaxation and its dependence on the chemical bonding. Solid State Communications, v. 115, n. 1, p. 67-71, 2000Tradução . . Disponível em: https://doi.org/10.1016/s0038-1098(00)00145-9. Acesso em: 30 set. 2024.
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      Miotto, R., Ferraz, A. C., & Srivastava, G. P. (2000). III-N(110) surface relaxation and its dependence on the chemical bonding. Solid State Communications, 115( 1), 67-71. doi:10.1016/s0038-1098(00)00145-9
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      Miotto R, Ferraz AC, Srivastava GP. III-N(110) surface relaxation and its dependence on the chemical bonding [Internet]. Solid State Communications. 2000 ; 115( 1): 67-71.[citado 2024 set. 30 ] Available from: https://doi.org/10.1016/s0038-1098(00)00145-9
    • Vancouver

      Miotto R, Ferraz AC, Srivastava GP. III-N(110) surface relaxation and its dependence on the chemical bonding [Internet]. Solid State Communications. 2000 ; 115( 1): 67-71.[citado 2024 set. 30 ] Available from: https://doi.org/10.1016/s0038-1098(00)00145-9
  • Source: Applied Physics Letters. Unidade: IF

    Assunto: FÍSICA

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      MIOTTO, R. e SRIVASTAVA, G P e FERRAZ, A. C. Structure of Zn adsorption on GaAs(001)-(2X4). Applied Physics Letters, v. 76, n. 25, p. 3735-3737, 2000Tradução . . Disponível em: https://doi.org/10.1063/1.126766. Acesso em: 30 set. 2024.
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      Miotto, R., Srivastava, G. P., & Ferraz, A. C. (2000). Structure of Zn adsorption on GaAs(001)-(2X4). Applied Physics Letters, 76( 25), 3735-3737. doi:10.1063/1.126766
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      Miotto R, Srivastava GP, Ferraz AC. Structure of Zn adsorption on GaAs(001)-(2X4) [Internet]. Applied Physics Letters. 2000 ; 76( 25): 3735-3737.[citado 2024 set. 30 ] Available from: https://doi.org/10.1063/1.126766
    • Vancouver

      Miotto R, Srivastava GP, Ferraz AC. Structure of Zn adsorption on GaAs(001)-(2X4) [Internet]. Applied Physics Letters. 2000 ; 76( 25): 3735-3737.[citado 2024 set. 30 ] Available from: https://doi.org/10.1063/1.126766
  • Source: Physica B. Unidade: IF

    Assunto: MATÉRIA CONDENSADA

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      MIOTTO, R. et al. Effects of gradient and non-linear core corrections on structural and electronic properties of GaN bulk and (001) surfaces. Physica B, v. 292, n. 1-2, p. 97-108, 2000Tradução . . Disponível em: https://doi.org/10.1016/s0921-4526(00)00488-9. Acesso em: 30 set. 2024.
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      Miotto, R., DENSITY-FUNCTIONAL CALCULATIONS,, Srivastava, G. P., & Ferraz, A. C. (2000). Effects of gradient and non-linear core corrections on structural and electronic properties of GaN bulk and (001) surfaces. Physica B, 292( 1-2), 97-108. doi:10.1016/s0921-4526(00)00488-9
    • NLM

      Miotto R, DENSITY-FUNCTIONAL CALCULATIONS, Srivastava GP, Ferraz AC. Effects of gradient and non-linear core corrections on structural and electronic properties of GaN bulk and (001) surfaces [Internet]. Physica B. 2000 ; 292( 1-2): 97-108.[citado 2024 set. 30 ] Available from: https://doi.org/10.1016/s0921-4526(00)00488-9
    • Vancouver

      Miotto R, DENSITY-FUNCTIONAL CALCULATIONS, Srivastava GP, Ferraz AC. Effects of gradient and non-linear core corrections on structural and electronic properties of GaN bulk and (001) surfaces [Internet]. Physica B. 2000 ; 292( 1-2): 97-108.[citado 2024 set. 30 ] Available from: https://doi.org/10.1016/s0921-4526(00)00488-9

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