Source: Journal of Crystal Growth. Unidade: IFSC
Subjects: FÍSICA DA MATÉRIA CONDENSADA, SEMICONDUTORES
ABNT
RODRIGUES, S C P e SIPAHI, Guilherme Matos. Calculations of electronic and optical properties in p-doped AlGaN/GaN superlattices and quantum wells. Journal of Crystal Growth, v. 246, n. 3-4, p. 347-354, 2002Tradução . . Disponível em: https://doi.org/10.1016/s0022-0248(02)01760-8. Acesso em: 01 nov. 2025.APA
Rodrigues, S. C. P., & Sipahi, G. M. (2002). Calculations of electronic and optical properties in p-doped AlGaN/GaN superlattices and quantum wells. Journal of Crystal Growth, 246( 3-4), 347-354. doi:10.1016/s0022-0248(02)01760-8NLM
Rodrigues SCP, Sipahi GM. Calculations of electronic and optical properties in p-doped AlGaN/GaN superlattices and quantum wells [Internet]. Journal of Crystal Growth. 2002 ;246( 3-4): 347-354.[citado 2025 nov. 01 ] Available from: https://doi.org/10.1016/s0022-0248(02)01760-8Vancouver
Rodrigues SCP, Sipahi GM. Calculations of electronic and optical properties in p-doped AlGaN/GaN superlattices and quantum wells [Internet]. Journal of Crystal Growth. 2002 ;246( 3-4): 347-354.[citado 2025 nov. 01 ] Available from: https://doi.org/10.1016/s0022-0248(02)01760-8
