Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FILMES FINOS, FÍSICA DA MATÉRIA CONDENSADA
ABNT
ZANATTA, Antonio Ricardo e RIBEIRO, C T M e ALVAREZ, F. Comment on "Ion-assisted pulsed laser deposition of aluminum nitride thin films" [J. Appl. Phys. 87 1540 (2000)]. Journal of Applied Physics. New York: Instituto de Física de São Carlos, Universidade de São Paulo. . Acesso em: 21 out. 2024. , 2002APA
Zanatta, A. R., Ribeiro, C. T. M., & Alvarez, F. (2002). Comment on "Ion-assisted pulsed laser deposition of aluminum nitride thin films" [J. Appl. Phys. 87 1540 (2000)]. Journal of Applied Physics. New York: Instituto de Física de São Carlos, Universidade de São Paulo.NLM
Zanatta AR, Ribeiro CTM, Alvarez F. Comment on "Ion-assisted pulsed laser deposition of aluminum nitride thin films" [J. Appl. Phys. 87 1540 (2000)]. Journal of Applied Physics. 2002 ;92( 10): 6349-6350.[citado 2024 out. 21 ]Vancouver
Zanatta AR, Ribeiro CTM, Alvarez F. Comment on "Ion-assisted pulsed laser deposition of aluminum nitride thin films" [J. Appl. Phys. 87 1540 (2000)]. Journal of Applied Physics. 2002 ;92( 10): 6349-6350.[citado 2024 out. 21 ]