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Artigo de periodico
Magnetophotoluminescence study of 'GA''AS'/'AL''GA''AS' coupled double quantum wells with bimodal heterointerface roughness (2012)
Lopes, E M; Menezes, J C M; Duarte, J L; Dias, I F L; Laureto, E; Guimarães, P S S; Subtil, A G S; Quivy, A A
Source: Journal of Luminescence. Unidade: IF
Subjects: FOTOLUMINESCÊNCIA, MAGNETISMO
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ABNT
LOPES, E M et al. Magnetophotoluminescence study of 'GA''AS'/'AL''GA''AS' coupled double quantum wells with bimodal heterointerface roughness. Journal of Luminescence, v. 132, n. 5, p. 1183-1187, 2012Tradução . . Disponível em: http://www.sciencedirect.com/science/article/pii/S0022231311007344. Acesso em: 27 set. 2024.
APA
Lopes, E. M., Menezes, J. C. M., Duarte, J. L., Dias, I. F. L., Laureto, E., Guimarães, P. S. S., et al. (2012). Magnetophotoluminescence study of 'GA''AS'/'AL''GA''AS' coupled double quantum wells with bimodal heterointerface roughness. Journal of Luminescence, 132( 5), 1183-1187. Recuperado de http://www.sciencedirect.com/science/article/pii/S0022231311007344
NLM
Lopes EM, Menezes JCM, Duarte JL, Dias IFL, Laureto E, Guimarães PSS, Subtil AGS, Quivy AA. Magnetophotoluminescence study of 'GA''AS'/'AL''GA''AS' coupled double quantum wells with bimodal heterointerface roughness [Internet]. Journal of Luminescence. 2012 ;132( 5): 1183-1187.[citado 2024 set. 27 ] Available from: http://www.sciencedirect.com/science/article/pii/S0022231311007344
Vancouver
Lopes EM, Menezes JCM, Duarte JL, Dias IFL, Laureto E, Guimarães PSS, Subtil AGS, Quivy AA. Magnetophotoluminescence study of 'GA''AS'/'AL''GA''AS' coupled double quantum wells with bimodal heterointerface roughness [Internet]. Journal of Luminescence. 2012 ;132( 5): 1183-1187.[citado 2024 set. 27 ] Available from: http://www.sciencedirect.com/science/article/pii/S0022231311007344
Artigo de periodico
The inﬂuence of different indium-composition profiles on the electronic structure of lens-shaped 'IN' IND. x' 'GA' IND. 1'−'ANTIND.x 'AS' quantum dots (2012)
Maia, A D B; Aquino, V M de; Dias, I F L; Silva, E C F da; Quivy, A A; Bindilatti, V
Source: JOURNAL OF PHYSICS D: APPLIED PHYSICS. Unidade: IF
Assunto: ÓPTICA ELETRÔNICA
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ABNT
MAIA, A D B et al. The inﬂuence of different indium-composition profiles on the electronic structure of lens-shaped 'IN' IND. x' 'GA' IND. 1'−'ANTIND.x 'AS' quantum dots. JOURNAL OF PHYSICS D: APPLIED PHYSICS, v. 45, p. 225104, 2012Tradução . . Disponível em: http://iopscience.iop.org/0022-3727/45/22/225104/pdf/0022-3727_45_22_225104.pdf. Acesso em: 27 set. 2024.
APA
Maia, A. D. B., Aquino, V. M. de, Dias, I. F. L., Silva, E. C. F. da, Quivy, A. A., & Bindilatti, V. (2012). The inﬂuence of different indium-composition profiles on the electronic structure of lens-shaped 'IN' IND. x' 'GA' IND. 1'−'ANTIND.x 'AS' quantum dots. JOURNAL OF PHYSICS D: APPLIED PHYSICS, 45, 225104. Recuperado de http://iopscience.iop.org/0022-3727/45/22/225104/pdf/0022-3727_45_22_225104.pdf
NLM
Maia ADB, Aquino VM de, Dias IFL, Silva ECF da, Quivy AA, Bindilatti V. The inﬂuence of different indium-composition profiles on the electronic structure of lens-shaped 'IN' IND. x' 'GA' IND. 1'−'ANTIND.x 'AS' quantum dots [Internet]. JOURNAL OF PHYSICS D: APPLIED PHYSICS. 2012 ;45 225104.[citado 2024 set. 27 ] Available from: http://iopscience.iop.org/0022-3727/45/22/225104/pdf/0022-3727_45_22_225104.pdf
Vancouver
Maia ADB, Aquino VM de, Dias IFL, Silva ECF da, Quivy AA, Bindilatti V. The inﬂuence of different indium-composition profiles on the electronic structure of lens-shaped 'IN' IND. x' 'GA' IND. 1'−'ANTIND.x 'AS' quantum dots [Internet]. JOURNAL OF PHYSICS D: APPLIED PHYSICS. 2012 ;45 225104.[citado 2024 set. 27 ] Available from: http://iopscience.iop.org/0022-3727/45/22/225104/pdf/0022-3727_45_22_225104.pdf
Artigo de periodico
Spin coherence generation in negatively charged self-assembled (In,Ga)As quantum dots by pumping excited trion states (2012)
Henriques, André Bohomoletz ; Schwan, A; Yakovlev, D R; Bayer, M; Maia, Álvaro Diego Bernardino; Quivy, A A
Source: Physical Review B. Unidade: IF
Subjects: PROPRIEDADES DOS MATERIAIS, FILMES FINOS, POÇOS QUÂNTICOS, PONTOS QUÂNTICOS
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ABNT
HENRIQUES, André Bohomoletz et al. Spin coherence generation in negatively charged self-assembled (In,Ga)As quantum dots by pumping excited trion states. Physical Review B, v. 86, n. 11, p. 115333/1-115333/7, 2012Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.86.115333. Acesso em: 27 set. 2024.
APA
Henriques, A. B., Schwan, A., Yakovlev, D. R., Bayer, M., Maia, Á. D. B., & Quivy, A. A. (2012). Spin coherence generation in negatively charged self-assembled (In,Ga)As quantum dots by pumping excited trion states. Physical Review B, 86( 11), 115333/1-115333/7. doi:10.1103/PhysRevB.86.115333
NLM
Henriques AB, Schwan A, Yakovlev DR, Bayer M, Maia ÁDB, Quivy AA. Spin coherence generation in negatively charged self-assembled (In,Ga)As quantum dots by pumping excited trion states [Internet]. Physical Review B. 2012 ;86( 11): 115333/1-115333/7.[citado 2024 set. 27 ] Available from: https://doi.org/10.1103/PhysRevB.86.115333
Vancouver
Henriques AB, Schwan A, Yakovlev DR, Bayer M, Maia ÁDB, Quivy AA. Spin coherence generation in negatively charged self-assembled (In,Ga)As quantum dots by pumping excited trion states [Internet]. Physical Review B. 2012 ;86( 11): 115333/1-115333/7.[citado 2024 set. 27 ] Available from: https://doi.org/10.1103/PhysRevB.86.115333
Trabalho de evento-resumo
Effects of confinement on the electron-phonon interaction in 'AL'IND. 0,18' 'GA'IND. 0,82''AS'/'GA''AS' quantum wells (2011)
Morais, R R O; Dias, I F L; Duarte, J L; Laureto, E; Silva, M A T da; Lourenço, S A; Silva, E C F da; Quivy, A A; Cezar, D F
Source: Resumo. Conference titles: Econtro de Física. Unidade: IF
Assunto: SEMICONDUTORES (FÍSICO-QUÍMICA)
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ABNT
MORAIS, R R O et al. Effects of confinement on the electron-phonon interaction in 'AL'IND. 0,18' 'GA'IND. 0,82''AS'/'GA''AS' quantum wells. 2011, Anais.. Foz do Iguaçu: SBF, 2011. Disponível em: http://www.sbf1.sbfisica.org.br/eventos/enf/2011/sys/resumos/R3380-1.pdf. Acesso em: 27 set. 2024.
APA
Morais, R. R. O., Dias, I. F. L., Duarte, J. L., Laureto, E., Silva, M. A. T. da, Lourenço, S. A., et al. (2011). Effects of confinement on the electron-phonon interaction in 'AL'IND. 0,18' 'GA'IND. 0,82''AS'/'GA''AS' quantum wells. In Resumo. Foz do Iguaçu: SBF. Recuperado de http://www.sbf1.sbfisica.org.br/eventos/enf/2011/sys/resumos/R3380-1.pdf
NLM
Morais RRO, Dias IFL, Duarte JL, Laureto E, Silva MAT da, Lourenço SA, Silva ECF da, Quivy AA, Cezar DF. Effects of confinement on the electron-phonon interaction in 'AL'IND. 0,18' 'GA'IND. 0,82''AS'/'GA''AS' quantum wells [Internet]. Resumo. 2011 ;[citado 2024 set. 27 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enf/2011/sys/resumos/R3380-1.pdf
Vancouver
Morais RRO, Dias IFL, Duarte JL, Laureto E, Silva MAT da, Lourenço SA, Silva ECF da, Quivy AA, Cezar DF. Effects of confinement on the electron-phonon interaction in 'AL'IND. 0,18' 'GA'IND. 0,82''AS'/'GA''AS' quantum wells [Internet]. Resumo. 2011 ;[citado 2024 set. 27 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enf/2011/sys/resumos/R3380-1.pdf
Artigo de periodico
Anisotropy of electron and hole g-factors in ('IN','GA')'AS' quantum dots (2011)
Schwan, A; Maia, A D B; Quivy, A A; Henriques, A B
Source: APPLIED PHYSICS LETTERS. Unidade: IF
Assunto: SEMICONDUTORES
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ABNT
SCHWAN, A et al. Anisotropy of electron and hole g-factors in ('IN','GA')'AS' quantum dots. APPLIED PHYSICS LETTERS, v. no2011, n. 22, p. 221914, 2011Tradução . . Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000099000022221914000001&idtype=cvips&doi=10.1063/1.3665634&prog=normal. Acesso em: 27 set. 2024.
APA
Schwan, A., Maia, A. D. B., Quivy, A. A., & Henriques, A. B. (2011). Anisotropy of electron and hole g-factors in ('IN','GA')'AS' quantum dots. APPLIED PHYSICS LETTERS, no2011( 22), 221914. Recuperado de http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000099000022221914000001&idtype=cvips&doi=10.1063/1.3665634&prog=normal
NLM
Schwan A, Maia ADB, Quivy AA, Henriques AB. Anisotropy of electron and hole g-factors in ('IN','GA')'AS' quantum dots [Internet]. APPLIED PHYSICS LETTERS. 2011 ; no2011( 22): 221914.[citado 2024 set. 27 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000099000022221914000001&idtype=cvips&doi=10.1063/1.3665634&prog=normal
Vancouver
Schwan A, Maia ADB, Quivy AA, Henriques AB. Anisotropy of electron and hole g-factors in ('IN','GA')'AS' quantum dots [Internet]. APPLIED PHYSICS LETTERS. 2011 ; no2011( 22): 221914.[citado 2024 set. 27 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000099000022221914000001&idtype=cvips&doi=10.1063/1.3665634&prog=normal
Artigo de periodico
Dispersion of electron g-factor with optical transition energy in ('IN','GA')'AS'/ 'GA''AS' self-assembled quantum dots (2011)
Schwan, A; Meiners, B M; Spatzek, S; Varwig, S; Yakovlev, D R; Bayer, M; Henriques, A B ; Quivy, A A ; Maia, A D B
Source: APPLIED PHYSICS LETTERS. Unidade: IF
Assunto: SEMICONDUTORES
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ABNT
SCHWAN, A et al. Dispersion of electron g-factor with optical transition energy in ('IN','GA')'AS'/ 'GA''AS' self-assembled quantum dots. APPLIED PHYSICS LETTERS, v. 98, n. ju2011, p. 233102, 2011Tradução . . Disponível em: https://doi.org/10.1063/1.3588413. Acesso em: 27 set. 2024.
APA
Schwan, A., Meiners, B. M., Spatzek, S., Varwig, S., Yakovlev, D. R., Bayer, M., et al. (2011). Dispersion of electron g-factor with optical transition energy in ('IN','GA')'AS'/ 'GA''AS' self-assembled quantum dots. APPLIED PHYSICS LETTERS, 98( ju2011), 233102. doi:10.1063/1.3588413
NLM
Schwan A, Meiners BM, Spatzek S, Varwig S, Yakovlev DR, Bayer M, Henriques AB, Quivy AA, Maia ADB. Dispersion of electron g-factor with optical transition energy in ('IN','GA')'AS'/ 'GA''AS' self-assembled quantum dots [Internet]. APPLIED PHYSICS LETTERS. 2011 ;98( ju2011): 233102.[citado 2024 set. 27 ] Available from: https://doi.org/10.1063/1.3588413
Vancouver
Schwan A, Meiners BM, Spatzek S, Varwig S, Yakovlev DR, Bayer M, Henriques AB, Quivy AA, Maia ADB. Dispersion of electron g-factor with optical transition energy in ('IN','GA')'AS'/ 'GA''AS' self-assembled quantum dots [Internet]. APPLIED PHYSICS LETTERS. 2011 ;98( ju2011): 233102.[citado 2024 set. 27 ] Available from: https://doi.org/10.1063/1.3588413
Trabalho de evento-resumo
Subband energy levels of 'IN' IND.0,75''GA' IND. 0,25''AS'/'IN' IND. 0,75''AL' IND. 0,25''AS' single square quantum well (2011)
Anghinoni, B; Mamani, N C; Gusev, G M; Quivy, A A
Source: Resumo. Conference titles: Brazilian Workshop on Semiconductor Physics. Unidade: IF
Assunto: SPIN
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ABNT
ANGHINONI, B et al. Subband energy levels of 'IN' IND.0,75''GA' IND. 0,25''AS'/'IN' IND. 0,75''AL' IND. 0,25''AS' single square quantum well. 2011, Anais.. Juiz de Fora: UFJF, 2011. Disponível em: http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0099-1.pdf. Acesso em: 27 set. 2024.
APA
Anghinoni, B., Mamani, N. C., Gusev, G. M., & Quivy, A. A. (2011). Subband energy levels of 'IN' IND.0,75''GA' IND. 0,25''AS'/'IN' IND. 0,75''AL' IND. 0,25''AS' single square quantum well. In Resumo. Juiz de Fora: UFJF. Recuperado de http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0099-1.pdf
NLM
Anghinoni B, Mamani NC, Gusev GM, Quivy AA. Subband energy levels of 'IN' IND.0,75''GA' IND. 0,25''AS'/'IN' IND. 0,75''AL' IND. 0,25''AS' single square quantum well [Internet]. Resumo. 2011 ;[citado 2024 set. 27 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0099-1.pdf
Vancouver
Anghinoni B, Mamani NC, Gusev GM, Quivy AA. Subband energy levels of 'IN' IND.0,75''GA' IND. 0,25''AS'/'IN' IND. 0,75''AL' IND. 0,25''AS' single square quantum well [Internet]. Resumo. 2011 ;[citado 2024 set. 27 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0099-1.pdf
Trabalho de evento-resumo
Interdot carrier transfer in self-assembled 'IN''AS'/'GA''AS' double-quantum-dots structures (2011)
Lourenço, Sidney Alves; Poças, Luiz Carlos; Sawata, Marcella Ferraz; Lopes, Joyce Marquini; Laureto, Edson; Duarte, José Leonil; Quivy, A A; Dias, Ivan Frederico Lupiano
Source: Resumo. Conference titles: Econtro de Física. Unidade: IF
Assunto: SEMICONDUTORES (FÍSICO-QUÍMICA)
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ABNT
LOURENÇO, Sidney Alves et al. Interdot carrier transfer in self-assembled 'IN''AS'/'GA''AS' double-quantum-dots structures. 2011, Anais.. Foz do Iguaçu: SBF, 2011. Disponível em: http://www.sbf1.sbfisica.org.br/eventos/enf/2011/sys/resumos/R2604-1.pdf. Acesso em: 27 set. 2024.
APA
Lourenço, S. A., Poças, L. C., Sawata, M. F., Lopes, J. M., Laureto, E., Duarte, J. L., et al. (2011). Interdot carrier transfer in self-assembled 'IN''AS'/'GA''AS' double-quantum-dots structures. In Resumo. Foz do Iguaçu: SBF. Recuperado de http://www.sbf1.sbfisica.org.br/eventos/enf/2011/sys/resumos/R2604-1.pdf
NLM
Lourenço SA, Poças LC, Sawata MF, Lopes JM, Laureto E, Duarte JL, Quivy AA, Dias IFL. Interdot carrier transfer in self-assembled 'IN''AS'/'GA''AS' double-quantum-dots structures [Internet]. Resumo. 2011 ;[citado 2024 set. 27 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enf/2011/sys/resumos/R2604-1.pdf
Vancouver
Lourenço SA, Poças LC, Sawata MF, Lopes JM, Laureto E, Duarte JL, Quivy AA, Dias IFL. Interdot carrier transfer in self-assembled 'IN''AS'/'GA''AS' double-quantum-dots structures [Internet]. Resumo. 2011 ;[citado 2024 set. 27 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enf/2011/sys/resumos/R2604-1.pdf
Trabalho de evento-resumo
Behavior of excitonic binding energy in single and double 'GA''AS'/'AL''GA''AS' quantum wells (2011)
Lopes, E M; Quivy, A A; César, D F; Franchello, F; Duarte, J L; Dias, I F L; Laureto, E; Guimarães, P S S; Tanaka, R Y
Source: Resumo. Conference titles: Econtro de Física. Unidade: IF
Assunto: SEMICONDUTORES (FÍSICO-QUÍMICA)
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ABNT
LOPES, E M et al. Behavior of excitonic binding energy in single and double 'GA''AS'/'AL''GA''AS' quantum wells. 2011, Anais.. Foz do Iguaçu: SBF, 2011. Disponível em: http://www.sbf1.sbfisica.org.br/eventos/enf/2011/sys/resumos/R1570-1.pdf. Acesso em: 27 set. 2024.
APA
Lopes, E. M., Quivy, A. A., César, D. F., Franchello, F., Duarte, J. L., Dias, I. F. L., et al. (2011). Behavior of excitonic binding energy in single and double 'GA''AS'/'AL''GA''AS' quantum wells. In Resumo. Foz do Iguaçu: SBF. Recuperado de http://www.sbf1.sbfisica.org.br/eventos/enf/2011/sys/resumos/R1570-1.pdf
NLM
Lopes EM, Quivy AA, César DF, Franchello F, Duarte JL, Dias IFL, Laureto E, Guimarães PSS, Tanaka RY. Behavior of excitonic binding energy in single and double 'GA''AS'/'AL''GA''AS' quantum wells [Internet]. Resumo. 2011 ;[citado 2024 set. 27 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enf/2011/sys/resumos/R1570-1.pdf
Vancouver
Lopes EM, Quivy AA, César DF, Franchello F, Duarte JL, Dias IFL, Laureto E, Guimarães PSS, Tanaka RY. Behavior of excitonic binding energy in single and double 'GA''AS'/'AL''GA''AS' quantum wells [Internet]. Resumo. 2011 ;[citado 2024 set. 27 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enf/2011/sys/resumos/R1570-1.pdf
Trabalho de evento-resumo
Investigation of interdot carrier transfer in vertically stacked self-assembled InAs/GaAs double-quantum-dots grown on GaAs (100) (2011)
Lourenço, Sidney Alves; Poças, Luiz Carlos; Lopes, Joyce Marquini; Laureto, Edson; Duarte, José Leonil; Dias, Ivan Frederico Lupiano; Quivy, A A
Source: Resumo. Conference titles: Brazilian Workshop on Semiconductor Physics. Unidade: IF
Assunto: SEMICONDUTORES
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ABNT
LOURENÇO, Sidney Alves et al. Investigation of interdot carrier transfer in vertically stacked self-assembled InAs/GaAs double-quantum-dots grown on GaAs (100). 2011, Anais.. Juiz de Fora: UFJF, 2011. Disponível em: http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0113-1.pdf. Acesso em: 27 set. 2024.
APA
Lourenço, S. A., Poças, L. C., Lopes, J. M., Laureto, E., Duarte, J. L., Dias, I. F. L., & Quivy, A. A. (2011). Investigation of interdot carrier transfer in vertically stacked self-assembled InAs/GaAs double-quantum-dots grown on GaAs (100). In Resumo. Juiz de Fora: UFJF. Recuperado de http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0113-1.pdf
NLM
Lourenço SA, Poças LC, Lopes JM, Laureto E, Duarte JL, Dias IFL, Quivy AA. Investigation of interdot carrier transfer in vertically stacked self-assembled InAs/GaAs double-quantum-dots grown on GaAs (100) [Internet]. Resumo. 2011 ;[citado 2024 set. 27 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0113-1.pdf
Vancouver
Lourenço SA, Poças LC, Lopes JM, Laureto E, Duarte JL, Dias IFL, Quivy AA. Investigation of interdot carrier transfer in vertically stacked self-assembled InAs/GaAs double-quantum-dots grown on GaAs (100) [Internet]. Resumo. 2011 ;[citado 2024 set. 27 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0113-1.pdf
Trabalho de evento-resumo
High-efficiency infrared photodetectors based on quantum wells grown by molecular-beam epitaxy (2011)
Fernandes, F M; Maia, A D B; Ferreira, D T; Silva, E C F da; Quivy, A A
Source: Resumo. Conference titles: Brazilian Workshop on Semiconductor Physics. Unidade: IF
Assunto: FOTODETECTORES
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ABNT
FERNANDES, F M et al. High-efficiency infrared photodetectors based on quantum wells grown by molecular-beam epitaxy. 2011, Anais.. Juiz de Fora: UFJF, 2011. Disponível em: http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0026-1.pdf. Acesso em: 27 set. 2024.
APA
Fernandes, F. M., Maia, A. D. B., Ferreira, D. T., Silva, E. C. F. da, & Quivy, A. A. (2011). High-efficiency infrared photodetectors based on quantum wells grown by molecular-beam epitaxy. In Resumo. Juiz de Fora: UFJF. Recuperado de http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0026-1.pdf
NLM
Fernandes FM, Maia ADB, Ferreira DT, Silva ECF da, Quivy AA. High-efficiency infrared photodetectors based on quantum wells grown by molecular-beam epitaxy [Internet]. Resumo. 2011 ;[citado 2024 set. 27 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0026-1.pdf
Vancouver
Fernandes FM, Maia ADB, Ferreira DT, Silva ECF da, Quivy AA. High-efficiency infrared photodetectors based on quantum wells grown by molecular-beam epitaxy [Internet]. Resumo. 2011 ;[citado 2024 set. 27 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0026-1.pdf
Trabalho de evento-resumo
Universal spintronic properties of (In,Ga)As/GaAs self-assembled quantum dots (2011)
Henriques, A B; Maia, A D B; Schwan, A; Quivy, A A; Yakovlev, D R; Bayer, M
Source: Resumo. Conference titles: Brazilian Workshop on Semiconductor Physics. Unidade: IF
Assunto: SPIN
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ABNT
HENRIQUES, A B et al. Universal spintronic properties of (In,Ga)As/GaAs self-assembled quantum dots. 2011, Anais.. Juiz de Fora: UFJF, 2011. Disponível em: http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0142-1.pdf. Acesso em: 27 set. 2024.
APA
Henriques, A. B., Maia, A. D. B., Schwan, A., Quivy, A. A., Yakovlev, D. R., & Bayer, M. (2011). Universal spintronic properties of (In,Ga)As/GaAs self-assembled quantum dots. In Resumo. Juiz de Fora: UFJF. Recuperado de http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0142-1.pdf
NLM
Henriques AB, Maia ADB, Schwan A, Quivy AA, Yakovlev DR, Bayer M. Universal spintronic properties of (In,Ga)As/GaAs self-assembled quantum dots [Internet]. Resumo. 2011 ;[citado 2024 set. 27 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0142-1.pdf
Vancouver
Henriques AB, Maia ADB, Schwan A, Quivy AA, Yakovlev DR, Bayer M. Universal spintronic properties of (In,Ga)As/GaAs self-assembled quantum dots [Internet]. Resumo. 2011 ;[citado 2024 set. 27 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0142-1.pdf

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