Annealing and temperature effects on minority carriers in ion implanted silicon solar cells (1990)
Source: Conference Record. Conference titles: IEEE Photovoltaic Specialists Conference. Unidade: EP
Assunto: CÉLULAS SOLARES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
NUBILE, Paulo et al. Annealing and temperature effects on minority carriers in ion implanted silicon solar cells. 1990, Anais.. New York: Ieee, 1990. . Acesso em: 26 jul. 2024.APA
Nubile, P., Beloto, A. F., Veissid, N., Waldman, B., Pereyra, I., & Andrade, A. M. de. (1990). Annealing and temperature effects on minority carriers in ion implanted silicon solar cells. In Conference Record. New York: Ieee.NLM
Nubile P, Beloto AF, Veissid N, Waldman B, Pereyra I, Andrade AM de. Annealing and temperature effects on minority carriers in ion implanted silicon solar cells. Conference Record. 1990 ;[citado 2024 jul. 26 ]Vancouver
Nubile P, Beloto AF, Veissid N, Waldman B, Pereyra I, Andrade AM de. Annealing and temperature effects on minority carriers in ion implanted silicon solar cells. Conference Record. 1990 ;[citado 2024 jul. 26 ]