Source: Journal of Vacuum Science and Technolohy B. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, ESPECTROSCOPIA RAMAN, MICROSCOPIA
ABNT
JACOBSOHN, L. G. e ZANATTA, Antonio Ricardo e NASTASI, M. Formation of silicon nanocrystals in Si'O IND.2' by oxireduction reaction indeced by impurity implantation and annealing. Journal of Vacuum Science and Technolohy B, v. 22, n. 4, p. 1669-1671, 2004Tradução . . Acesso em: 01 out. 2024.APA
Jacobsohn, L. G., Zanatta, A. R., & Nastasi, M. (2004). Formation of silicon nanocrystals in Si'O IND.2' by oxireduction reaction indeced by impurity implantation and annealing. Journal of Vacuum Science and Technolohy B, 22( 4), 1669-1671.NLM
Jacobsohn LG, Zanatta AR, Nastasi M. Formation of silicon nanocrystals in Si'O IND.2' by oxireduction reaction indeced by impurity implantation and annealing. Journal of Vacuum Science and Technolohy B. 2004 ; 22( 4): 1669-1671.[citado 2024 out. 01 ]Vancouver
Jacobsohn LG, Zanatta AR, Nastasi M. Formation of silicon nanocrystals in Si'O IND.2' by oxireduction reaction indeced by impurity implantation and annealing. Journal of Vacuum Science and Technolohy B. 2004 ; 22( 4): 1669-1671.[citado 2024 out. 01 ]