Source: COMPEL : the international journal for computation and mathematics in electrical and electronic engineering. Unidade: EESC
Subjects: SEMICONDUTORES, TRANSISTORES
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RAGI, Regiane e NÓBREGA, Rafael Vinícius Tayette da e ROMERO, Murilo Araujo. A novel self consistent calculation approach for the capacitance-voltage characteristics of semiconductor quantum wire transistors based on a split-gate configuration. COMPEL : the international journal for computation and mathematics in electrical and electronic engineering, v. 31, n. 2, p. 460-476, 2012Tradução . . Disponível em: https://doi.org/10.1108/03321641211200536. Acesso em: 18 ago. 2024.APA
Ragi, R., Nóbrega, R. V. T. da, & Romero, M. A. (2012). A novel self consistent calculation approach for the capacitance-voltage characteristics of semiconductor quantum wire transistors based on a split-gate configuration. COMPEL : the international journal for computation and mathematics in electrical and electronic engineering, 31( 2), 460-476. doi:10.1108/03321641211200536NLM
Ragi R, Nóbrega RVT da, Romero MA. A novel self consistent calculation approach for the capacitance-voltage characteristics of semiconductor quantum wire transistors based on a split-gate configuration [Internet]. COMPEL : the international journal for computation and mathematics in electrical and electronic engineering. 2012 ; 31( 2): 460-476.[citado 2024 ago. 18 ] Available from: https://doi.org/10.1108/03321641211200536Vancouver
Ragi R, Nóbrega RVT da, Romero MA. A novel self consistent calculation approach for the capacitance-voltage characteristics of semiconductor quantum wire transistors based on a split-gate configuration [Internet]. COMPEL : the international journal for computation and mathematics in electrical and electronic engineering. 2012 ; 31( 2): 460-476.[citado 2024 ago. 18 ] Available from: https://doi.org/10.1108/03321641211200536
