Vacancies in amorphous silicon: a first principles study (2003)
Source: Book of Abstracts II (Poster). Conference titles: International Conference on Defects in Semiconductors. Unidade: IF
Subjects: SEMICONDUTORES, ESTRUTURA ELETRÔNICA, PROPRIEDADES DOS MATERIAIS
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MIRANDA, C R et al. Vacancies in amorphous silicon: a first principles study. 2003, Anais.. Amsterdam: Elsevier Science, 2003. . Acesso em: 25 ago. 2024.APA
Miranda, C. R., Antonelli, A., Silva, A. J. R. da, & Fazzio, A. (2003). Vacancies in amorphous silicon: a first principles study. In Book of Abstracts II (Poster). Amsterdam: Elsevier Science.NLM
Miranda CR, Antonelli A, Silva AJR da, Fazzio A. Vacancies in amorphous silicon: a first principles study. Book of Abstracts II (Poster). 2003 ;[citado 2024 ago. 25 ]Vancouver
Miranda CR, Antonelli A, Silva AJR da, Fazzio A. Vacancies in amorphous silicon: a first principles study. Book of Abstracts II (Poster). 2003 ;[citado 2024 ago. 25 ]