Source: Optics Express. Unidade: IFSC
Subjects: ESTRUTURA DE SUPERFÍCIE, LASER, SEMICONDUTORES, FOTÔNICA
ABNT
LIANG, Baolai et al. Correlation between photoluminescence and morphology for single layer self-assembled InGaAs/GaAs quantum dots. Optics Express, v. 26, n. 18, p. 23107-23118, 2018Tradução . . Disponível em: https://doi.org/10.1364/OE.26.023107. Acesso em: 31 out. 2024.APA
Liang, B., Yuan, Q., Su, L., Wang, Y., Guo, Y., Wang, S., et al. (2018). Correlation between photoluminescence and morphology for single layer self-assembled InGaAs/GaAs quantum dots. Optics Express, 26( 18), 23107-23118. doi:10.1364/OE.26.023107NLM
Liang B, Yuan Q, Su L, Wang Y, Guo Y, Wang S, Fu G, Marega Junior E, Mazur YI, Ware ME, Salamo G. Correlation between photoluminescence and morphology for single layer self-assembled InGaAs/GaAs quantum dots [Internet]. Optics Express. 2018 ; 26( 18): 23107-23118.[citado 2024 out. 31 ] Available from: https://doi.org/10.1364/OE.26.023107Vancouver
Liang B, Yuan Q, Su L, Wang Y, Guo Y, Wang S, Fu G, Marega Junior E, Mazur YI, Ware ME, Salamo G. Correlation between photoluminescence and morphology for single layer self-assembled InGaAs/GaAs quantum dots [Internet]. Optics Express. 2018 ; 26( 18): 23107-23118.[citado 2024 out. 31 ] Available from: https://doi.org/10.1364/OE.26.023107