Mahmoodnia, H.; Salehi, A.; Mastelaro, Valmor Roberto 
Source: Semiconductors. Unidade: IFSC
Subjects: SEMICONDUTORES, MATERIAIS, ESPECTROSCOPIA DE RAIO X
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MAHMOODNIA, H. e SALEHI, A. e MASTELARO, Valmor Roberto. GaAs semiconductor passivated by (NH4)2Sx: analysis of different passivation methods using electrical characteristics and XPS measurements. Semiconductors, v. 54, n. 7, p. 817-826, 2020Tradução . . Disponível em: https://doi.org/10.1134/S106378262007009X. Acesso em: 14 out. 2024.APA
Mahmoodnia, H., Salehi, A., & Mastelaro, V. R. (2020). GaAs semiconductor passivated by (NH4)2Sx: analysis of different passivation methods using electrical characteristics and XPS measurements. Semiconductors, 54( 7), 817-826. doi:10.1134/S106378262007009XNLM
Mahmoodnia H, Salehi A, Mastelaro VR. GaAs semiconductor passivated by (NH4)2Sx: analysis of different passivation methods using electrical characteristics and XPS measurements [Internet]. Semiconductors. 2020 ; 54( 7): 817-826.[citado 2024 out. 14 ] Available from: https://doi.org/10.1134/S106378262007009XVancouver
Mahmoodnia H, Salehi A, Mastelaro VR. GaAs semiconductor passivated by (NH4)2Sx: analysis of different passivation methods using electrical characteristics and XPS measurements [Internet]. Semiconductors. 2020 ; 54( 7): 817-826.[citado 2024 out. 14 ] Available from: https://doi.org/10.1134/S106378262007009X
