Fonte: Program Book. Nome do evento: Brazilian MRS Meeting. Unidade: IFSC
Assuntos: DISPOSITIVOS ELETRÔNICOS, TRANSISTORES, SEMICONDUTORES, FILMES FINOS, POLÍMEROS (MATERIAIS)
ABNT
CARDOSO, L. S. e MACIEL, A. C. e FARIA, Roberto Mendonça. Analysis of field effect mobility in rr-P3HT and PCBM based OFETs as function of annealing temperature of the active layer. 2013, Anais.. Rio de Janeiro: Sociedade Brasileira de Pesquisa em Materiais - SBPMat, 2013. . Acesso em: 14 jul. 2024.APA
Cardoso, L. S., Maciel, A. C., & Faria, R. M. (2013). Analysis of field effect mobility in rr-P3HT and PCBM based OFETs as function of annealing temperature of the active layer. In Program Book. Rio de Janeiro: Sociedade Brasileira de Pesquisa em Materiais - SBPMat.NLM
Cardoso LS, Maciel AC, Faria RM. Analysis of field effect mobility in rr-P3HT and PCBM based OFETs as function of annealing temperature of the active layer. Program Book. 2013 ;[citado 2024 jul. 14 ]Vancouver
Cardoso LS, Maciel AC, Faria RM. Analysis of field effect mobility in rr-P3HT and PCBM based OFETs as function of annealing temperature of the active layer. Program Book. 2013 ;[citado 2024 jul. 14 ]