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Artigo de periodico
Electronic properties of multiple 'DELTA-DOPED' layers in silicon and 'GA' 'AS' (1994)
Scolfaro, L M R; Lino, A T; Takahashi, E; Leite, J. R.
Fonte: International Journal of Quantum Chemistry. Unidade: IF
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SCOLFARO, L M R et al. Electronic properties of multiple 'DELTA-DOPED' layers in silicon and 'GA' 'AS'. International Journal of Quantum Chemistry, v. s28, p. 667-73, 1994Tradução . . Acesso em: 01 out. 2024.
APA
Scolfaro, L. M. R., Lino, A. T., Takahashi, E., & Leite, J. R. (1994). Electronic properties of multiple 'DELTA-DOPED' layers in silicon and 'GA' 'AS'. International Journal of Quantum Chemistry, s28, 667-73.
NLM
Scolfaro LMR, Lino AT, Takahashi E, Leite JR. Electronic properties of multiple 'DELTA-DOPED' layers in silicon and 'GA' 'AS'. International Journal of Quantum Chemistry. 1994 ;s28 667-73.[citado 2024 out. 01 ]
Vancouver
Scolfaro LMR, Lino AT, Takahashi E, Leite JR. Electronic properties of multiple 'DELTA-DOPED' layers in silicon and 'GA' 'AS'. International Journal of Quantum Chemistry. 1994 ;s28 667-73.[citado 2024 out. 01 ]
Artigo de periodico
Eletronic states induced by a 'GA' vacancy in the 'GA''AS IND.1-X''P IND.X' alloy (1993)
Scolfaro, L M R; Pintanel, R; Fazzio, A; Leite, J. R.
Fonte: International Journal of Quantum Chemistry. Unidade: IF
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SCOLFARO, L M R et al. Eletronic states induced by a 'GA' vacancy in the 'GA''AS IND.1-X''P IND.X' alloy. International Journal of Quantum Chemistry, v. 27, n. suppl., p. 213-7, 1993Tradução . . Acesso em: 01 out. 2024.
APA
Scolfaro, L. M. R., Pintanel, R., Fazzio, A., & Leite, J. R. (1993). Eletronic states induced by a 'GA' vacancy in the 'GA''AS IND.1-X''P IND.X' alloy. International Journal of Quantum Chemistry, 27( suppl.), 213-7.
NLM
Scolfaro LMR, Pintanel R, Fazzio A, Leite JR. Eletronic states induced by a 'GA' vacancy in the 'GA''AS IND.1-X''P IND.X' alloy. International Journal of Quantum Chemistry. 1993 ;27( suppl.): 213-7.[citado 2024 out. 01 ]
Vancouver
Scolfaro LMR, Pintanel R, Fazzio A, Leite JR. Eletronic states induced by a 'GA' vacancy in the 'GA''AS IND.1-X''P IND.X' alloy. International Journal of Quantum Chemistry. 1993 ;27( suppl.): 213-7.[citado 2024 out. 01 ]
Artigo de periodico
Intersubband transition energies in quantum wells in n-type gaas-'AL IND.X''GA IND.1-X'as heterostructures (1987)
Gomes, V M S; Oliveira, G M G; Leite, J. R.; Chaves, A S
Fonte: International Journal of Quantum Chemistry. Unidade: IF
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GOMES, V M S et al. Intersubband transition energies in quantum wells in n-type gaas-'AL IND.X''GA IND.1-X'as heterostructures. International Journal of Quantum Chemistry, v. 32, n. 6 , p. 655-61, 1987Tradução . . Acesso em: 01 out. 2024.
APA
Gomes, V. M. S., Oliveira, G. M. G., Leite, J. R., & Chaves, A. S. (1987). Intersubband transition energies in quantum wells in n-type gaas-'AL IND.X''GA IND.1-X'as heterostructures. International Journal of Quantum Chemistry, 32( 6 ), 655-61.
NLM
Gomes VMS, Oliveira GMG, Leite JR, Chaves AS. Intersubband transition energies in quantum wells in n-type gaas-'AL IND.X''GA IND.1-X'as heterostructures. International Journal of Quantum Chemistry. 1987 ;32( 6 ): 655-61.[citado 2024 out. 01 ]
Vancouver
Gomes VMS, Oliveira GMG, Leite JR, Chaves AS. Intersubband transition energies in quantum wells in n-type gaas-'AL IND.X''GA IND.1-X'as heterostructures. International Journal of Quantum Chemistry. 1987 ;32( 6 ): 655-61.[citado 2024 out. 01 ]

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