Structural and electronic properties of Ti impurities in SiC: an ab initio investigation (2004)
Fonte: Computational Materials Science. Unidades: IF, EP
Assuntos: MATÉRIA CONDENSADA, ESTRUTURA ELETRÔNICA, PROPRIEDADES DOS MATERIAIS
ABNT
BARBOSA, K O et al. Structural and electronic properties of Ti impurities in SiC: an ab initio investigation. Computational Materials Science, 2004Tradução . . Disponível em: https://doi.org/10.1016/j.commatsci.2004.01.008. Acesso em: 07 nov. 2024.APA
Barbosa, K. O., Assali, L. V. C., Machado, W. V. M., & Justo Filho, J. F. (2004). Structural and electronic properties of Ti impurities in SiC: an ab initio investigation. Computational Materials Science. doi:10.1016/j.commatsci.2004.01.008NLM
Barbosa KO, Assali LVC, Machado WVM, Justo Filho JF. Structural and electronic properties of Ti impurities in SiC: an ab initio investigation [Internet]. Computational Materials Science. 2004 ;[citado 2024 nov. 07 ] Available from: https://doi.org/10.1016/j.commatsci.2004.01.008Vancouver
Barbosa KO, Assali LVC, Machado WVM, Justo Filho JF. Structural and electronic properties of Ti impurities in SiC: an ab initio investigation [Internet]. Computational Materials Science. 2004 ;[citado 2024 nov. 07 ] Available from: https://doi.org/10.1016/j.commatsci.2004.01.008