Photoreflectance characterization of silicon Delta-doping p-'GA''AS' layer grown by MBE (1989)
Source: Abstracts. Conference titles: International Conference on the Electronic Properties of Two-dimensional Systems - EP2DS8. Unidade: IFQSC
Assunto: FÍSICA
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ABNT
BERNUSSI, A. A. et al. Photoreflectance characterization of silicon Delta-doping p-'GA''AS' layer grown by MBE. 1989, Anais.. Grenoble: , Universidade de São Paulo, 1989. . Acesso em: 05 out. 2024.APA
Bernussi, A. A., Ilkawa, F., Motisuke, P., Basmaji, P., Siu Li, M., & Hipólito, O. (1989). Photoreflectance characterization of silicon Delta-doping p-'GA''AS' layer grown by MBE. In Abstracts. Grenoble: , Universidade de São Paulo.NLM
Bernussi AA, Ilkawa F, Motisuke P, Basmaji P, Siu Li M, Hipólito O. Photoreflectance characterization of silicon Delta-doping p-'GA''AS' layer grown by MBE. Abstracts. 1989 ;[citado 2024 out. 05 ]Vancouver
Bernussi AA, Ilkawa F, Motisuke P, Basmaji P, Siu Li M, Hipólito O. Photoreflectance characterization of silicon Delta-doping p-'GA''AS' layer grown by MBE. Abstracts. 1989 ;[citado 2024 out. 05 ]