Study of the segregation process in GaAs/AlAs superlattices using Raman spectroscopy (2001)
Fonte: Journal of Raman Spectroscopy. Unidade: IFSC
Assuntos: ESPECTROSCOPIA RAMAN, SUPERFÍCIE FÍSICA
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ZANELATO, G et al. Study of the segregation process in GaAs/AlAs superlattices using Raman spectroscopy. Journal of Raman Spectroscopy, v. 32, p. 857-861, 2001Tradução . . Disponível em: https://doi.org/10.1002/jrs.774. Acesso em: 04 out. 2024.APA
Zanelato, G., Pusep, Y. A., Galzerani, J. C., Lubyshev, D. I., & González-Borrero, P. P. (2001). Study of the segregation process in GaAs/AlAs superlattices using Raman spectroscopy. Journal of Raman Spectroscopy, 32, 857-861. doi:10.1002/jrs.774NLM
Zanelato G, Pusep YA, Galzerani JC, Lubyshev DI, González-Borrero PP. Study of the segregation process in GaAs/AlAs superlattices using Raman spectroscopy [Internet]. Journal of Raman Spectroscopy. 2001 ; 32 857-861.[citado 2024 out. 04 ] Available from: https://doi.org/10.1002/jrs.774Vancouver
Zanelato G, Pusep YA, Galzerani JC, Lubyshev DI, González-Borrero PP. Study of the segregation process in GaAs/AlAs superlattices using Raman spectroscopy [Internet]. Journal of Raman Spectroscopy. 2001 ; 32 857-861.[citado 2024 out. 04 ] Available from: https://doi.org/10.1002/jrs.774